Influence of nitrogen gas flow rate on the structural, morphological and electrical properties of sputtered TiN films

ABSTRACTDiamond-like carbon (DLC) has widespread attention as a new material for its application to thin film solar cells and other semiconducting devices. DLC can be produced at a lower cost than amorphous silicon, which is utilized for solar cells today. However, the electrical properties of DLC are insufficient for this purpose because of many dangling bonds in DLC. To solve this problem, we investigated the effects of the fluorine incorporation on the structural and electrical properties of DLC.We prepared five kinds of fluorinated DLC (F-DLC) thin film with different amounts of fluorine. Films were deposited by the radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. C6H6 and C6HF5 were used as source gases. The total gas flow rate was constant and the gas flow rate ratio R (=C6H6 / (C6H6 + C6HF5)) was changed from 0 to 1 in 0.25 ratio steps. We also prepared nitrogen doped DLC (F-DLC) on p-Si using N2 gas as a doping gas to form nitrogen doped DLC (F-DLC) / p-Si heterojunction diodes.X-ray photoelectron spectroscopy (XPS) showed that fluorine concentration in the DLC films was controlled. Moreover, the XPS analysis of the C1s spectrum at R=2/4 showed the presence of CF bonding. At R=1, CF2 bonding was observed in addition to CF bonding. The sheet resistivity of the films changed from 3.07×1012 to 4.86×109 Ω. The minimum value was obtained at R=2/4. The current-voltage characteristics indicated that nitrogen doped F-DLC of 2/4 and p-Si heterojunction diode exhibited the best rectification characteristics and its energy conversion efficiency had been maximized. This is because of a decrease of dangling bonds density by ESR analysis and an increase of sp2 structures by Raman analysis. When the fluorine is over certain content, the sheet resistivity increases because chain structures become larger, which is due to the CF2 bonding in F-DLC prevents ring structures. Many C2F4 species were observed and it may become precursors of the chain structure domains, such as (CF2)n.In this study, we revealed effects of fluorine incorporation on DLC and succeeded in increasing its conductivity and improving rectification characteristics of DLC/ p-Si hetero-junction diodes. Our results indicate that DLC fluorination is effective for the semiconducting material, such as solar cell applications.

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Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique

MRS Advances ◽

10.1557/adv.2018.224 ◽

2018 ◽

Vol 3 (3) ◽

pp. 165-170

Author(s):

Shumpei Ogawa ◽

Tatsuya Kuroda ◽

Ryuga Koike ◽

Hiroki Ishizaki

Keyword(s):

Atomic Layer Deposition ◽

Flow Rate ◽

Gas Flow ◽

Microwave Plasma ◽

Atomic Layer ◽

Plasma Power ◽

Gas Flow Rate ◽

Nitrogen Gas ◽

Nitrogen Radical ◽

Atomic Layer Deposition Technique

AbstractRecently, Plasma Assisted Atomic Layer Deposition Technique will easily control the thickness and the composition of semiconductor films. The radical generated by using the plasma techniques, gave the decrease of the defect into the semiconductor films. In this investigation, the relationship between microwave plasma power, nitrogen gas flow rate and concentration of generated nitrogen radical, was evaluated. At the first, Plasma emission spectrum at microwave plasma power (0 to 400W) was measured using a mixed 200sccm argon gas and 10sccm nitrogen gas. Next, the plasma emission spectrum was measured in the mixing of nitrogen gas flow rate (0 to 40sccm) with 200sccm argon gas flow rate. At that time, the microwave plasma power was set to 200W. Nitrogen radical spectrum were identified from all the emission spectrum, and the nitrogen radical intensity was calculated. As a result, the nitrogen radical intensity became the largest at 200sccm argon gas flow rate and 10sccm nitrogen gas flow rate. In addition, the nitrogen radical intensity increased in proportion to the microwave plasma power. The concentration of generated nitrogen radical could be controlled by changing the microwave plasma power and the nitrogen gas flow rate. Mentioned above, nitride thin films will be obtained on Si Substrates by microwave generated remote plasma assisted atomic layer deposition technique.

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INFLUENCE OF NITROGEN FLOW RATE IN REDUCING TIN MICRODROPLETS ON BIOMEDICAL TI-13ZR-13NB ALLOY

Jurnal Teknologi ◽

10.11113/jt.v78.8825 ◽

2016 ◽

Vol 78 (5-10) ◽

Cited By ~ 2

Author(s):

Arman Shah ◽

S. Izman ◽

M. A. Hassan

Keyword(s):

Flow Rate ◽

Physical Vapor Deposition ◽

Gas Flow ◽

Detrimental Effect ◽

Gas Flow Rate ◽

X Ray Diffraction ◽

Tin Coating ◽

Nitrogen Gas ◽

Deposition Parameters ◽

Cathodic Arc

Cathodic arc physical vapor deposition (CAPVD) is one of the promising techniques that have a potential to coat titanium nitride (TiN) on biomedical implants due to its good adhesion and high evaporation rate. However, this method emits microdroplets which have the possible detrimental effect on the coating performance. Past studies indicated that micro droplets can be controlled through proper deposition parameters. In the present work, an attempt was made to study the effect of nitrogen gas flow rates (100 to 300 sccm) on TiN coating of the Ti-13Zr-13Nb biomedical alloy. Scanning electron microscopy (SEM) was used to evaluate surface morphology and coating thickness while crystal phase of the coated substrates was determined using X-Ray Diffraction (XRD). Image analysis software was employed to quantify microdroplets counts. Results show that higher nitrogen gas flow rate able to decrease a significant amount of microdroplets and concurrently increase the thickness of TiN coating. A mixed crystal planes of (111) and (220) are obtained on the coated substrates at this setting which exhibits denser structure with higher adhesion strength as compared to substrates coated at the lower N2 gas flow rate.

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Influences of oxygen gas flow rate on electrical properties of Ga-doped ZnO thin films deposited on glass and sapphire substrates

Thin Solid Films ◽

10.1016/j.tsf.2014.02.013 ◽

2014 ◽

Vol 559 ◽

pp. 78-82 ◽

Cited By ~ 10

Author(s):

Hisao Makino ◽

Huaping Song ◽

Tetsuya Yamamoto

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Flow Rate ◽

Gas Flow ◽

Zno Thin Films ◽

Gas Flow Rate ◽

Sapphire Substrates ◽

Oxygen Gas ◽

Doped Zno

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A Study on the Electrical Properties of ITO Thin Films with Various Oxygen Gas Flow Rate

Journal of the Korean institute of surface engineering ◽

10.5695/jkise.2007.40.3.144 ◽

2007 ◽

Vol 40 (3) ◽

pp. 144-148 ◽

Cited By ~ 1

Author(s):

Dong-H. Choi ◽

Min-J. Keum ◽

A.R. Jean ◽

Jean-G. Han

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Flow Rate ◽

Gas Flow ◽

Gas Flow Rate ◽

Ito Thin Films ◽

Oxygen Gas

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Carbonization of Elaeis guineensis frond fiber: Effect of heating rate and nitrogen gas flow rate for adsorbent properties enhancement

Journal of Industrial and Engineering Chemistry ◽

10.1016/j.jiec.2015.01.020 ◽

2015 ◽

Vol 28 ◽

pp. 37-44 ◽

Cited By ~ 14

Author(s):

Ling Wei Low ◽

Tjoon Tow Teng ◽

Abbas F.M. Alkarkhi ◽

Norhashimah Morad ◽

Baharin Azahari

Keyword(s):

Heating Rate ◽

Flow Rate ◽

Gas Flow ◽

Elaeis Guineensis ◽

Gas Flow Rate ◽

Nitrogen Gas

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Discussion on microstructure of chemical-vapor-deposited TiN films based on the calculated gaseous concentration distribution in the reactor

Journal of Materials Research ◽

10.1557/jmr.1995.2801 ◽

1995 ◽

Vol 10 (11) ◽

pp. 2801-2807 ◽

Cited By ~ 8

Author(s):

Noboru Yoshikawa ◽

Atsushi Kikuchi

Keyword(s):

Partial Pressure ◽

Flow Rate ◽

Gas Flow ◽

Tubular Reactor ◽

Chemical Vapor ◽

Axial Direction ◽

Preferred Orientation ◽

Upstream Region ◽

Gas Flow Rate ◽

Tin Films

TiN films were ehemical-vapor-deposited on the inner wall of a tubular reactor. Films deposited in the upstream region of the reactor consisted of small and sharp crystals with (111)-preferred orientation or random orientation. On the other hand, films deposited in the downstream region or at lower partial pressure of TiCl4 consisted of columnar crystals with (110)-preferred orientation, having polyhedral shapes on the surface. For the films deposited under different conditions at different axial positions, relationships were investigated among the temperature, the calculated concentrations on the substrate, and the degree of preferred orientation of the films. As a result, it was shown that formation of films with (110)-preferred orientation is related to the conditions of high temperature and low partial pressure of TiCl4. Films deposited at the higher gas flow rate had lower degrees of (110)-preferred orientation. Decrease in partial pressure of TiCl4 along the axial direction in the reactor was calculated to be smaller at higher gas flow rate, and provided suitable conditions for deposition of films having small and sharp crystals.

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Growth Defects and Surface Roughness in TiN-Coated Tool Steel at Various N2 Gas Flow Rates Using Cathodic Arc PVD Technique

Materials Science Forum ◽

10.4028/www.scientific.net/msf.636-637.965 ◽

2010 ◽

Vol 636-637 ◽

pp. 965-970

Author(s):

Mubarak Ali ◽

E. Hamzah ◽

I.A. Qazi ◽

M.R.M. Toff

Keyword(s):

Surface Roughness ◽

Fractal Dimension ◽

Line Profile ◽

Flow Rate ◽

Gas Flow ◽

Coated Steel ◽

Gas Flow Rate ◽

Nitrogen Gas ◽

Growth Defects ◽

Cathodic Arc

In the present study, titanium nitride coatings on tool steel were deposited using cathodic arc physical vapour deposition technique. We studied and discussed the effect of various nitrogen gas flow rate on the surface properties of TiN-coated steel. The coating properties investigated in this work include the surface morphology, surface roughness, line profile and fractal dimension analyses using atomic force microscope. Minimum values for surface roughness, line profile and fractal dimension analyses were recorded at nitrogen gas flow rate of 200 sccm. This is mainly because of the reduction in macro-droplets and minimization of the growth defects, usually produced during etching and deposition stages. Critical limit of nitrogen gas flow rate in TiN coatings were identified and considered an important aspect to understand the performance of TiN PVD-coated steel.

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THE EFFECT OF NITROGEN GAS FLOW RATE ON THE PROPERTIES OF TiN-COATED HIGH-SPEED STEEL (HSS) USING CATHODIC ARC EVAPORATION PHYSICAL VAPOR DEPOSITION (PVD) TECHNIQUE

Surface Review and Letters ◽

10.1142/s0218625x05007542 ◽

2005 ◽

Vol 12 (04) ◽

pp. 631-643 ◽

Cited By ~ 14

Author(s):

ALI MUBARAK ◽

ESAH BINTI HAMZAH ◽

MOHD RADZI HJ. MOHD TOFF ◽

ABDUL HAKIM BIN HASHIM

Keyword(s):

Flow Rate ◽

Physical Vapor Deposition ◽

High Speed ◽

Gas Flow ◽

High Speed Steel ◽

Gas Flow Rate ◽

Nitrogen Gas ◽

Cathodic Arc Evaporation ◽

Arc Evaporation ◽

Cathodic Arc

Cathodic arc evaporation (CAE) is a widely-used technique for generating highly ionized plasma from which hard and wear resistant physical vapor deposition (PVD) coatings can be deposited. A major drawback of this technique is the emission of micrometer-sized droplets of cathode material from the arc spot, which are commonly referred to as "macroparticles." In present study, titanium nitride ( TiN ) coatings on high-speed steel (HSS) coupons were produced with a cathodic arc evaporation technique. We studied and discussed the effect of various nitrogen gas flow rates on microstructural and mechanical properties of TiN -coated HSS coupons. The coating properties investigated in this work included the surface morphology, thickness of deposited coating, adhesion between the coating and substrate, coating composition, coating crystallography, hardness and surface characterization using a field emission scanning electron microscope (FE-SEM) with energy dispersive X-ray (EDX), X-ray diffraction (XRD) with glazing incidence angle (GIA) technique, scratch tester, hardness testing machine, surface roughness tester, and atomic force microscope (AFM). An increase in the nitrogen gas flow rate showed decrease in the formation of macro-droplets in CAE PVD technique. During XRD-GIA studies, it was observed that by increasing the nitrogen gas flow rate, the main peak [1,1,1] shifted toward the lower angular position. Surface roughness decreased with an increase in nitrogen gas flow rate but was higher than the uncoated polished sample. Microhardness of TiN -coated HSS coupons showed more than two times increase in hardness than the uncoated one. Scratch tester results showed good adhesion between the coating material and substrate. Considerable improvement in the properties of TiN -deposited thin films was achieved by the strict control of all operational steps.

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