scholarly journals Flexible ZnO photoelectrode for photo electrochemical energy conversion

2021 ◽  
Author(s):  
T. Shiyani ◽  
Indrani Banerjee ◽  
Santosh K. Mahapatra ◽  
Asim K Ray
Keyword(s):  
Band Gap ◽  
Diffraction Pattern ◽  
Absorption Spectra ◽  
Optical Band Gap ◽  
Solar Fuels ◽  
Photoelectrochemical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Pet Substrate

Abstract Photoelectrochemical properties have been investigated for flexible ZnO/ITO/PET photoelectrodes. ZnO was spin coated on ITO/PET substrate with thickness of about 310 nm. The high crystalline structure of ZnO was studied using x-ray diffraction pattern. A value of 3.4 eV has been estimated for optical band gap from its absorption spectra. The flexible ZnO photoelectrode was demonstrated to generate photoelectrochemical current. Values of 1.022 and 0.714 were found to be for photo switching and photoresponsivity, respectively. ZnO/ITO/PET can be used as a substrate for making flexible hybrid PEC devices to generate solar power and solar fuels.

scholarly journals Flexible zinc oxide photoelectrode for photo electrochemical energy conversion

2021 ◽  
Author(s):  
T. Shiyani ◽  
I. Banerjee ◽  
Santosh K. Mahapatra ◽  
Asim K. Ray
Keyword(s):  
Zinc Oxide ◽  
Optical Band Gap ◽  
Solar Fuels ◽  
Flat Band ◽  
Flat Band Potential ◽  
Photoelectrochemical Properties ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray ◽  
A Value

AbstractPhotoelectrochemical properties have been investigated for flexible photoelectrodes containing 310 nm thick ZnO film on spin-coated ITO/PET. The high crystalline structure of ZnO was studied using x-ray diffraction pattern. A value of 3.4 eV has been estimated for optical band gap from its absorption spectra. The flexible ZnO photoelectrode was demonstrated to generate photoelectrochemical current. The photocurrents are enhanced by 4% whereas flat-band potential is shifted by 8 V due to the illumination. Values of 1.022 and 0.714 AW−1 were found to be for photo switching and photoresponsivity, respectively. ZnO/ITO/PET can be used as a substrate for making flexible hybrid PEC devices to generate solar power and solar fuels.

Band-gap engineering in amorphous/microcrystalline ScxGa1-xN.

2001 ◽  
Vol 693 ◽  
Author(s):  
M. E. Little ◽  
M. E. Kordesch
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Absorption Spectra ◽  
Optical Band Gap ◽  
Optical Absorption Spectra ◽  
X Ray Diffraction ◽  
Band Gap Engineering ◽  
X Ray ◽  
Bilayer Films ◽  
Quartz Substrates

AbstractReactive sputtering was used to grow thin films of ScxGa1-xN with scandium concentrations of 20%-70% on quartz substrates at temperatures of 300-675 K. X-ray diffraction (XRD) of the films showed either weak or no structure, suggesting the films are amorphous or microcrystalline. Optical absorption spectra were taken of each sample and the optical band gap was determined. The band gap varied linearly with increasing Ga concentration between 2.0 and 3.5 eV. Ellipsometry was used to confirm the band gap measurements and provide optical constants in the range 250-1200 nm. ScN and GaN have different crystal structures (rocksalt and wurzite, respectively), and thus may form a heterogeneous mixture as opposed to an alloy. Since the XRD data were inconclusive, bilayers of ScN/GaN were grown and optical absorption spectra taken. A fundamental difference in the spectra between the bilayer films and alloy films was seen, suggesting the films are alloys, not herterogeneous mixtures.

Structural and Electronic Properties of (CdTe)1−x(In2Te3)x Films Grown by Close-spaced vapor Transport Combined with Free Evaporation

2000 ◽  
Vol 15 (8) ◽  
pp. 1811-1815 ◽  
Author(s):  
M. Zapata-Torres ◽  
Y. P. Mascarenhas ◽  
M. A. Santana-Aranda ◽  
J. Luyo-Alvarado ◽  
M. Melé-Lirandez ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Single Phase ◽  
Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Structural And Electronic Properties ◽  
Direct Band ◽  
Transmission Measurements

The structural and electronic properties of (CdTe)1−x(In2Te3)x thin films as a function of substrate temperature were studied using x-ray diffraction, energy dispersive x-ray analysis, and Raman, transmission, and modulated transmission spectroscopies. The films were grown by the close-spaced vapor transport technique combined with free evaporation; CdTe and In2Te3 were used as sources. From x-ray diffraction the presence of mixed phases and differences in composition were detected, and good correlation with Raman spectroscopy was found. Transmission spectroscopy suggested the possibility of a modulation of the band gap of the alloy from a value as low as 0.5 eV up to 1.5 eV. Single-phase films presented a direct band gap of around 1.15 eV, as obtained from modulated transmission measurements.

Effect of Tin Composition on Cu2ZnSnS4 Photovoltaic Absorbers

2012 ◽  
Vol 534 ◽  
pp. 156-159 ◽  
Author(s):  
Dong Hua Fan ◽  
Rong Zhang ◽  
Hui Ren Peng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Crystallite Size ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
X Ray ◽  
Poor Condition ◽  
Czts Thin Films

Cu2ZnSnS4 (CZTS) thin films are prepared by sulfurizing the precursors deposited by vacuum evaporation methods. The samples sulfurized at 500°C for 3h shows the strong (112) diffraction peak at 28.45˚, suggesting the successful synthesis of CZTS thin films. The X-ray diffraction shows that CZTS thin film prepared in Sn-poor condition have the best crystallinity. The Sn-dependent crystallite size was calculated to be 19.53-21.03 nm. In addition, we found that the optical band gap with various Sn contents can be modulated at 1.48-1.85 eV

Growth, Optical Adsorption and Resistivity of (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 Single Crystals

2013 ◽  
Vol 200 ◽  
pp. 50-53
Author(s):  
Inna A. Ivashchenko ◽  
Volodumur V. Halyan ◽  
Irina V. Danylyuk ◽  
Volodumur Z. Pankevuch ◽  
Georgij Y. Davydyuk ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Phase Diagram ◽  
Differential Thermal Analysis ◽  
Band Gap ◽  
Single Crystals ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman ◽  
Xrd Method

The phase diagram of the Ga2Se3–In2Se3 system was investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0. 01 eV. The resistance of the single crystals of (Ga0.6In0.4)2Se3 (R=500 MΩ) and (Ga0.594In0.396Er0.01)2Se3 (R=210 MΩ) was measured.

Thin Film InN/Anatase Bilayers as a Substitute Dye/Semiconductor Interface for Solar Cells

2008 ◽  
Vol 1102 ◽  
Author(s):  
Daniel Hoy ◽  
Martin Kordesch
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Band Gap ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
Sheet Resistivity ◽  
High Quality ◽  
Semiconductor Interface ◽  
X Ray ◽  
Dye Sensitized

AbstractThe electronic properties of an InN/anatse bilayer, proposed as a replacement for the dye/semi-conductor interface in Dye Sensitized Solar Cell[1, 2], are measured. RF sputtered thin films of anatase and InN are used as the “dye” replacement. . Two types of InN film are prepared: polycrystalline samples deposited at high temperature, with an optical band gap of < 1 eV, and as-deposited (at least partially amorphous) samples with an optical band gap >1 eV. Energy Dispersive X-ray fluorescence, X-ray Diffraction, and Raman spectroscopy are used to characterize the samples. The resistance in the dark and under illumination are measured. The samples deposited at high temperature are crystalline and have a sheet resistivity ≈ 4 Ω/⁐, and display no photoconductivity. The partially amorphous samples have sheet resistivity of ≈ 500Ω/⁐. Since both types of InN films, including high quality (based on band gap) polycrystalline InN, do not show increased conductivity with light, we conclude that a solar cell based on an InN/anatase bilayer is not feasible.

scholarly journals Chromium-Induced Nanocrystallization of a-Si Thin Films into the Wurtzite Structure

2008 ◽  
Vol 2008 ◽  
pp. 1-6 ◽  
Author(s):  
K. Uma Mahendra Kumar ◽  
M. Ghanashyam Krishna
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Nanocrystalline Silicon ◽  
Spectral Transmittance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Silicides ◽  
Crystallite Sizes ◽  
Cr Addition

Chromium metal-induced nanocrystallization of amorphous silicon (a-Si) thin films is reported. The nanocrystalline nature of these films is confirmed from X-ray diffraction and Raman spectroscopy. Significantly, the deconvolution of Raman spectra reveals that the thin films were crystallized in a mixed phase of cubic diamond and wurzite structure as evidenced by the lines at 512 and 496 cm−1, respectively. The crystallite sizes were between 4 to 8 nm. Optical properties of the crystallized silicon, derived from spectral transmittance curves, revealed high transmission in the region above the band gap. Optical band gap varied between 1.3 to 2.0 eV depending on the nature of crystallinity of these films and remained unaltered with increase in Cr addition from 5 to 30%. This signifies that the electronic structure of the nanocrystalline Silicon films is not affected considerably inspite of the presence of metal silicides and the process of crystallization.

scholarly journals Effect of Samarium Nanoparticles on Optical Properties of Zinc Borotellurite Glass System

2016 ◽  
Vol 846 ◽  
pp. 63-68 ◽  
Author(s):  
Saad S. Hajer ◽  
M.K. Halimah ◽  
Azmi Zakaria ◽  
M.N. Azlan
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Fundamental Absorption Edge ◽  
Xrd Analysis ◽  
Ftir Analysis ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
X Ray ◽  
Bonding Parameters ◽  
Optical Energy Band Gap

The glass series of samarium nanoparticles (NPs) doped zinc borotellurite glasses were successfully fabricated by using conventional melt-quenching technique. The structural properties of the prepared glasses were investigated by X-ray diffraction (XRD) analysis and FTIR analysis. It was confirmed that the prepared glasses are amorphous in nature. The bonding parameters of the glasses were analyzed by using FTIR analysis and were found the formation of non-bridging oxygen. The density of these glasses were measured and found to be increased with increasing samarium NPs content. The optical absorption spectra of these glasses were revealed that the fundamental absorption edge shifts to higher wavelengths as the content of Sm2O3 (NPs) increases. The optical energy band gap are found to be decreased linearly with an increasing samarium NPs concentration which is due to the formation of non-bridging oxygen in the glass system.KeywordsBorotellurite glass; optical band gap, Samarium nanoparticles.

Conversion of Monetite, CaHPO4, To Apatites: Effect of Carbonate on the Crystallinity and the Morphology of the Apatite Crystallites

1970 ◽  
Vol 14 ◽  
pp. 57-66 ◽  
Author(s):  
Racquel Z. LeGeros ◽  
John P. LeGeros ◽  
Otto R. Trautz ◽  
W. Paul Shirra
Keyword(s):  
Crystallite Size ◽  
Diffraction Pattern ◽  
Absorption Spectra ◽  
Infrared Absorption ◽  
Carbonate Content ◽  
Structural Effects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Carbonate Solutions ◽  
Infrared Absorption Spectra

AbstractThe incorporation of carbonate in the apatite causes a decrease in crystallite size as demonstrated in precipitated apatites prepared at 37°C. Carbonate disturbs the crystallization of the growing apatite crystallites to such an extent that materials with more than 15 wt% CO3 gives an ‘amorphous’ x-ray diffraction pattern. The incorporation of carbonate in precipitates prepared at 100°C. causes a shortening of the a-axis and a lengthening of the c-axis which is proportional to the carbonate content, supporting the concept that in these apatites, CO3 substitutes for PO4 (11). X-ray diffraction linebroadening studies of CO3-apatites precipitated at 100°C and electron micrographs show that the size and shape of the crystallites change from long needles to smaller rods to tiny spheroids, depending upon the amount of CO3. Carbonate causes the bonding in the apatite to become weaker and more isotropic, which results in the small spheroidal crystals.This paper reports the effect of carbonate on lattice parameters and morphology of carbonate-apatites which have been prepared by the conversion of rnonetite, CaHPO4 in hot carbonate solutions. The structural effects of CO3 on the apatite is further reflected by the modification of the vibrations of the PO4 groups in the infrared absorption spectra. The morphology of ‘amorphous’ CO3- containing apatitic precipitates and that of CO3∼apatite with high CO3 content (prepared at 100°C) is similar, i.e., spheroidal in shape, but greatly differing in crystallite size.

Sign in / Sign up

Export Citation Format

Share Document