Effects of Bonding Temperature and Pressure on the Electrical Resistance of Cu/Sn/Cu Joints for 3D Integration Applications

2010 ◽  
Vol 40 (3) ◽  
pp. 324-329 ◽  
Author(s):  
Byunghoon Lee ◽  
Jongseo Park ◽  
Junghyun Song ◽  
Kee-won Kwon ◽  
Hoo-jeong Lee
Keyword(s):  
Electrical Resistance ◽  
Bonding Temperature ◽  
3D Integration ◽  
Temperature And Pressure

Low Temperature Direct Cu-Cu Immersion Bonding for 3D Integration

2009 ◽  
Vol 1156 ◽  
Author(s):  
Rahul Agarwal ◽  
Wouter Ruythooren
Keyword(s):  
Citric Acid ◽  
Low Temperature ◽  
Bonding Temperature ◽  
Atmospheric Condition ◽  
High Strength ◽  
Bonding Process ◽  
3D Integration ◽  
Temperature And Pressure ◽  
Low Temperature Bonding

AbstractHigh yielding and high strength Cu-Cu thermo-compression bonds have been obtained at temperatures as low as 175°C. Plated Cu bumps are used for bonding, without any surface planarization step or plasma treatment, and bonding is performed at atmospheric condition. In this work the 25μm diameter bumps are used at a bump pitch of 100μm and 40μm. Low temperature bonding is achieved by using immersion bonding in citric acid. Citric acid provides in-situ cleaning of the Cu surface during the bonding process. The daisy chain electrical bonding yield ranges from 84%-100% depending on the bonding temperature and pressure.

Studies of Temperature and Pressure Dependence in Thermocompression Gold Joints

2005 ◽  
Author(s):  
X. F. Ang ◽  
G. G. Zhang ◽  
J. Wei ◽  
Z. Chen ◽  
C. C. Wong
Keyword(s):  
Shear Strength ◽  
Critical Temperature ◽  
Pressure Dependence ◽  
Bonding Temperature ◽  
Interfacial Stress ◽  
3D Integration ◽  
Bonding Pressure ◽  
Barrier Films ◽  
Linear Rise ◽  
Temperature And Pressure

Low temperature interconnection is a critical component of 3D integration and packaging technology. In this study, we investigate the characteristics of thermocompression metal bonding using gold stud bumps formed on Si die in the temperature range of 100-300 °C and the pressure range of 200–600 g/bump. We observed a critical bonding temperature below which bonding did not occur and above which shear strength improves linearly with bonding temperature. This critical temperature can be interpreted to be the onset of the break-up of organic barrier films while the linear rise in shear strength can be attributed to the increase in the true bonded area. Above this critical temperature, the tensile strength of the Au-Au bond exhibits a maximum with increasing bonding pressure. This can be related to the pressure dependence of the interfacial stress distribution and its effect on unbonded radius, r. SEM fractographs of the failed surfaces suggest a combination of cohesive and adhesive failures along the bonded interface.

First in Operando SEM Observation of Electromigration-Induced Voids in TSV Structures

2013 ◽  
Author(s):  
Simon Gousseau ◽  
Stéphane Moreau ◽  
David Bouchu ◽  
Alexis Farcy ◽  
Pierre Montmitonnet ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electrical Resistance ◽  
Experimental Protocol ◽  
3D Integration ◽  
3 Dimensional ◽  
Early Beginning ◽  
In Operando ◽  
Reliability Issue ◽  
A Current ◽  
Scanning Electron

Abstract Since the early beginning of the integrated circuits, electromigration is a reliability issue of first interest. In 3-dimensional structures, electromigration is responsible for the formation of voids in lines connected to the Through Silicon Via (TSV). To our knowledge, this paper presents the first in operando electromigration experiment in a Scanning Electron Microscope (SEM) performed for 3D integration. The experimental protocol, including sample preparation and temperature regulation, is detailed. A current of 25 mA is injected in a structure heated at 350 °C for about 900 h. The evolution of voids is monitored and explained. Void growth occurs step by step, so that the microstructure may be assumed to play a major role in the depletion mechanism. The behavior of the electrical resistance is analyzed using the SEM micrographs.

scholarly journals The effects of temperature and pressure on the thermal conductivities of bodies. Part I.–The effect of temperature on the thermal conductivities of some electrical insulators.

1905 ◽  
Vol 74 (497-506) ◽  
pp. 337-338 ◽  
Author(s):  
Charles Herbert Lees ◽  
Arthur Schuster
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistance ◽  
Electrical Current ◽  
Effect Of Temperature ◽  
Thin Cylinder ◽  
Heating Wire ◽  
Effects Of Temperature ◽  
Temperature And Pressure ◽  
At Will ◽  
Thermal Conductivities

The substance whose thermal conductivity is to be determined has the form of a cylinder about 8 cms. long, 2 cms. diameter, and is surrounded by a thin cylinder of brass, which on account of its comparatively high thermal conductivity, makes the outer surfaces of the substance isothermal surfaces. The brass cylinder is placed in a Dewar The heat is supplied by the passage of an electrical current through platinoid wire embedded in the substance parallel to the axis of the cylinder, and about .4 cm. distant from it. The amount of heat generated is determined by the current through the wire and the potential difference between its ends. The temperature is measured by the electrical resistance of two short spirals of No. 40 pure platinum wire, down the centre of one of which the heating wire passes. To eliminate errors due to want of symmetry, a second heating wire passes down the centre of the second spiral, and the heating current may be sent through either or both at will.

Evaluation of Refractory Metals for Package Level Interconnection in a Harsh Environment

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000207-000212
Author(s):  
Riko I Made ◽  
Eric Jian Rong Phua ◽  
Key Wen Tan ◽  
Wei Chuan Ong ◽  
Clare Guanqi Huang ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Resistance ◽  
Physical Vapor Deposition ◽  
Harsh Environment ◽  
Ceramic Substrates ◽  
Substrate Adhesion ◽  
High Temperature And Pressure ◽  
Temperature And Pressure ◽  
Harsh Conditions ◽  
Environment Condition

Operating in a high temperature and pressure environment is a serious challenge for microelectronics device packaging. This study evaluates the electrical and mechanical behavior of Al, Ag, Mo, Nb and W metallization on ceramic substrates aged under harsh conditions, with the latter three showing great potential as candidates for replacing Cu. In the experiments, metals of interest were deposited by physical vapor deposition on alumina substrates. Samples were aged at 400°C and in 100 MPa argon pressure to simulate the harsh environment condition. During initial aging, it was observed that there was varying degree of electrical resistance changes. It can be understood that metal grains may grow during the initial thermal aging, leading to reductions in electrical resistance of some metals. Such reductions were observed on Ag and W samples. In comparison, there were much smaller increase in the measured resistances of Al and Mo. Nb shows the most significant increase in resistance that practically renders it unsuitable as an interconnect. While Ag shows considerably weak metal-to-substrate adhesion, the other four metals show satisfactory post aging metal-to-substrates adhesion. From these results, considering the physical and electrical properties of the metal, Al, Mo and W could be good candidates for high temperature and pressure applications.

Low Temperature Copper-Nanorod Bonding for 3D Integration

2006 ◽  
Vol 970 ◽  
Author(s):  
Pei-I Wang ◽  
Tansel Karabacak ◽  
Jian Yu ◽  
Hui-Feng Li ◽  
Gopal G. Pethuraja ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Morphological Changes ◽  
Ion Beam ◽  
Bonding Temperature ◽  
Bonding Layer ◽  
Nanorod Arrays ◽  
3D Integration ◽  
Sem Images ◽  
Bonding Pressure

ABSTRACTWafer bonding is an emerging technology for fabrication of complex three-dimensional (3D) structures; particularly it enables monolithic wafer-level 3D integration of high performance, multi-function microelectronic systems. For such a 3D integrated circuits, low-temperature wafer bonding is required to be compatible with the back-end-of-the-line processing conditions. Recently our investigation on surface melting characteristics of copper nanorod arrays showed that the threshold of the morphological changes of the nano-rod arrays occurs at a temperature significantly below the copper bulk melting point. With this unique property of the copper nanorod arrays, wafer bonding using copper nanorod arrays as a bonding intermediate layer was investigated at low temperatures (400 °C and lower). 200 mm Wafers, each with a copper nanorod array layer, were bonded at 200 – 400 °C and with a bonding down-force of 10 kN in a vacuum chamber. Bonding results were evaluated by razor blade test, mechanical grinding and polishing, and cross-section imaging using a focus ion beam/scanning electron microscope (FIB/SEM). The FIB/SEM images show that the copper nanorod arrays fused together accompanying by a grain growth at a bonding temperature of as low as 200 °C. A dense copper bonding layer was achieved at 400 °C where copper grains grew throughout the copper structure and the original bonding interface was eliminated. The sintering of such nanostructures depends not only on their feature size, but also significantly influenced by the bonding pressure. These two factors both contribute to the mass transport in the nanostructure, leading to the formation of a dense bonding layer.

scholarly journals ANALYSIS OF THE INFLUENCE OF SEASONAL ATMOSPHERIC PARAMETERS ON THE APPARENT RESISTIVITY OF ROCKS IN A BOREHOLE LOCATED IN THE AREA OF THE STARBOARD SIDE OF CHIRKEY HYDROPOWER STATION DAM

2016 ◽  
Author(s):  
Ш.Г. Идармачев ◽  
И.Ш. Идармачев ◽  
А.В. Дещеревский
Keyword(s):  
Water Level ◽  
Electrical Resistance ◽  
Hydroelectric Power Station ◽  
Hydroelectric Power ◽  
Electric Resistance ◽  
Seasonal Factors ◽  
High Regard ◽  
Temperature And Pressure ◽  
Simultaneous Influence ◽  
Analysis Of Time Series

В статье сделан анализ временных рядов уровня воды в Чиркейском водохранилище, температуры и давления атмосферы с целью определения влияния их на электрическое сопротивление пород в скважине, расположенной в районе правого борта высотной плотины ГЭС. На основе проведенного анализа установлено: 1) отсутствие влияний сезонных изменений температуры и давления атмосферы на электрическое сопротивление пород в скважине; 2) наличие высокой связи с коэффициентом корреляции 0,9 по модулю между сезонным изменением уровня воды в водохранилище и электрическим сопротивлением пород. В качестве механизма такого влияния рассматривается одновременное воздействие двух различных сезонных факторов, деформации пород и боковой фильтрации The article made the analysis of time series of water level in Chirkei reservoir, temperature and pressure of the atmosphere to determine its effect on the electrical resistance of rocks in the borehole located in the area starboard of the high dam hydroelectric power station. Based on the analysis found: 1) no effects of seasonal changes in temperature and pressure of the atmosphere on the electrical resistance of rocks in the borehole; 2) the presence of high regard with the correlation coefficient of 0.9 for the module between the seasonal change of water level in the reservoir and an electric resistance of rocks. As the mechanism of such influence is considered the simultaneous influence of two different seasonal factors, deformation of rocks and lateral filtering

Effects of the Thermocompression Bonding on the Microstructure and Contact Resistance for the Ultrafine Pitch Chip-on-Glass Packaging With Nonconductive Film

2010 ◽  
Vol 132 (4) ◽  
Author(s):  
Jianhua Zhang ◽  
Jinsong Zhang ◽  
Lianqiao Yang
Keyword(s):  
Contact Resistance ◽  
Bonding Temperature ◽  
Anisotropic Conductive Film ◽  
Bonding Parameters ◽  
Conductive Film ◽  
Geometric Size ◽  
Ε Phase ◽  
Thermocompression Bonding ◽  
Temperature And Pressure ◽  
Glass Packaging

Nonconductive film (NCF) is a challenging potential material to substitute the application of anisotropic conductive film in the ultrafine pitch chip-on-glass (COG) packaging. The NCF interconnection requires a high bonding temperature and pressure to form joints, and this causes new reliability concerns. This study investigated effects of the thermocompression bonding parameters on the microstructure and geometric size in the joints to a COG module packaged with NCF. The results revealed that the high temperature and pressure compressed the joints to become wider and shorter. A dual layer of intermetallic compounds consisting of AuSn2 (ε phase) and AuSn4 (η phase) was found in each joint. They were the two kinds of interphases with different melting points (AuSn2:309°C and AuSn4:257°C) during the interfacial reaction between Au and Sn. At the low temperature (below the melting point), the high pressure induced the residual inner stress to generate the cracks in the joints, and this also increased the contact resistance of the joints. The contact resistance increased with the pressure elevating at the same temperature and with the temperature degrading at the same pressure. In the COG packaging with NCF, a proper elevating of the bonding temperature could produce a stable direct connection with the low contact resistance.

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