Low-Temperature Cu-Cu Bonding Process Based on the Sn-Cu Multilayer and Self-Propagating Reaction Joining

2018 ◽  
Vol 48 (2) ◽  
pp. 1310-1317 ◽  
Author(s):  
Jinhu Fan ◽  
Tielin Shi ◽  
Zirong Tang ◽  
Bo Gong ◽  
Junjie Li ◽  
...  
2021 ◽  
Vol 11 (20) ◽  
pp. 9444
Author(s):  
Yoonho Kim ◽  
Seungmin Park ◽  
Sarah Eunkyung Kim

Low-temperature Cu-Cu bonding technology plays a key role in high-density and high-performance 3D interconnects. Despite the advantages of good electrical and thermal conductivity and the potential for fine pitch patterns, Cu bonding is vulnerable to oxidation and the high temperature of the bonding process. In this study, chip-level Cu bonding using an Ag nanofilm at 150 °C and 180 °C was studied in air, and the effect of the Ag nanofilm was investigated. A 15-nm Ag nanofilm prevented Cu oxidation prior to the Cu bonding process in air. In the bonding process, Cu diffused rapidly to the bonding interface and pure Cu-Cu bonding occurred. However, some Ag was observed at the bonding interface due to the short bonding time of 30 min in the absence of annealing. The shear strength of the Cu/Ag-Ag/Cu bonding interface was measured to be about 23.27 MPa, with some Ag remaining at the interface. This study demonstrated the good bonding quality of Cu bonding using an Ag nanofilm at 150 °C.


2017 ◽  
Vol 27 (7) ◽  
pp. 075019 ◽  
Author(s):  
Li Du ◽  
Tielin Shi ◽  
Lei Su ◽  
Zirong Tang ◽  
Guanglan Liao

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001221-001252 ◽  
Author(s):  
Kei Murayama ◽  
Mitsuhiro Aizawa ◽  
Mitsutoshi Higashi

The bonding technique for High density Flip Chip(F.C.) packages requires a low temperature and a low stress process to have high reliability of the micro joining ,especially that for sensor MEMS packages requires hermetic sealing so as to ensure their performance. The Transient Liquid Phase (TLP) bonding, that is a kind of diffusion bonding is a technique that connects the low melting point material such as Indium to the higher melting point metal such as Gold by the isothermal solidification and high-melting-point intermetallic compounds are formed. Therefore, it is a unique joining technique that can achieve not only the low temperature bonding and also the high temperature reliability. The Gold-Indium TLP bonding technique can join parts at 180 degree C and after bonding the melting point of the junction is shifted to more than 495 degree C, therefore itfs possible to apply the low temperature bonding lower than the general use as a lead free material such as a SAC and raise the melting point more than AuSn solder which is used for the high temperature reliability usage. Therefore, the heat stress caused by bonding process can be expected to be lowered. We examined wafer bonding and F.C bonding plus annealing technique by using electroplated Indium and Gold as a joint material. We confirmed that the shear strength obtained at the F.C. bonding plus anneal technique was equal with that of the wafer bonding process. Moreover, it was confirmed to ensure sufficient hermetic sealing in silicon cavity packages that had been bonded at 180 degree C. And the difference of the thermal stress that affect to the device by the bonding process was confirmed. In this paper, we report on various possible application of the TLP bonding.


2012 ◽  
Vol 2012 (DPC) ◽  
pp. 1-24
Author(s):  
Michael Gallagher ◽  
Jong-Uk Kim ◽  
Eric Huenger ◽  
Kai Zoschke ◽  
Christina Lopper ◽  
...  

3D stacking, one of the 3D integration technologies using through silicon vias (TSVs), is considered as a desirable 3D solution due to its cost effectiveness and matured technical background. For successful 3D stacking, precisely controlled bonding of the two substrates is necessary, so that various methods and materials have been developed over the last decade. Wafer bonding using polymeric adhesives has advantages. Surface roughness, which is critical in direct bonding and metal-to-metal bonding, is not a significant issue, as the organic adhesive can smooth out the unevenness during bonding process. Moreover, bonding of good quality can be obtained using relatively low bonding pressure and low bonding temperature. Benzocyclobutene (BCB) polymers have been commonly used as bonding adhesives due to their relatively low curing temperature (~250 °C), very low water uptake (<0.2%), excellent planarizing capability, and good affinity to Cu metal lines. In this study, we present wafer bonding with BCB at various conditions. In particular, bonding experiments are performed at low temperature range (180 °C ~ 210 °C), which results in partially cured state. In order to examine the effectiveness of the low temperature process, the mechanical (adhesion) strength and dimensional changes are measured after bonding, and compared with the values of the fully cured state. Two different BCB polymers, dry-etch type and photo type, are examined. Dry etch BCB is proper for full-area bonding, as it has low degree of cure and therefore less viscosity. Photo-BCB has advantages when a pattern (frame or via open) is to be structured on the film, since it is photoimageable (negative tone), and its moderate viscosity enables the film to sustain the patterns during the wafer bonding process. The effect of edge beads at the wafer rim area and the soft cure (before bonding) conditions on the bonding quality are also studied. Alan/Rey ok move from Flip Chip and Wafer Level Packaging 1-6-12.


2010 ◽  
Vol 34 (7) ◽  
pp. 929-933
Author(s):  
Kwang-Seop Kim ◽  
Hee-Jung Lee ◽  
Hee-Yeoun Kim ◽  
Jae-Hyun Kim ◽  
Seung-Min Hyun ◽  
...  

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