A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

Nano Research ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 3421-3429 ◽  
Author(s):  
Nguyen Minh Triet ◽  
Tran Quang Trung ◽  
Nguyen Thi Dieu Hien ◽  
Saqib Siddiqui ◽  
Do-Il Kim ◽  
...  
2007 ◽  
Vol 90 (14) ◽  
pp. 142111 ◽  
Author(s):  
Yu-Syuan Lin ◽  
Shun-Hau Koa ◽  
Chih-Yuan Chan ◽  
Shawn S. H. Hsu ◽  
Hong-Mao Lee ◽  
...  

Shinku ◽  
2006 ◽  
Vol 49 (3) ◽  
pp. 168-170
Author(s):  
Yonglong JIN ◽  
Shizuyasu OCHIAI ◽  
Goro SAWA ◽  
Yoshiyuki UCHIDA ◽  
Kenzo KOJIMA ◽  
...  

2006 ◽  
Author(s):  
Shizuyasu Ochiai ◽  
Qiang Zhang ◽  
Yoshiyuki Uchida ◽  
Asao Ohashi ◽  
Kenzo Kojima ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.


Sign in / Sign up

Export Citation Format

Share Document