Anti-vapor-penetration and condensate microdrop self-transport of superhydrophobic oblique nanowire surface under high subcooling

Nano Research ◽  
2020 ◽  
Author(s):  
Rui Wang ◽  
Feifei Wu ◽  
Fanfei Yu ◽  
Jie Zhu ◽  
Xuefeng Gao ◽  
...  
Keyword(s):  
Nanowire Surface

scholarly journals Hybrid ZnO/MoS2 Core/Sheath Heterostructures for Photoelectrochemical Water Splitting

Applied Nano ◽  
2021 ◽  
Vol 2 (3) ◽  
pp. 148-161
Author(s):  
Katerina Govatsi ◽  
Aspasia Antonelou ◽  
Labrini Sygellou ◽  
Stylianos G. Neophytides ◽  
Spyros N. Yannopoulos
Keyword(s):  
Visible Light ◽  
Wide Band ◽  
Nanowire Arrays ◽  
Maximum Efficiency ◽  
Light Illumination ◽  
Wide Band Gap ◽  
Long Term Stability ◽  
Visible Light Illumination ◽  
Nanowire Surface ◽  
Wide Range

The rational synthesis of semiconducting materials with enhanced photoelectrocatalytic efficiency under visible light illumination is a long-standing issue. ZnO has been systematically explored in this field, as it offers the feasibility to grow a wide range of nanocrystal morphology; however, its wide band gap precludes visible light absorption. We report on a novel method for the controlled growth of semiconductor heterostructures and, in particular, core/sheath ZnO/MoS2 nanowire arrays and the evaluation of their photoelectrochemical efficiency in oxygen evolution reaction. ZnO nanowire arrays, with a narrow distribution of nanowire diameters, were grown on FTO substrates by chemical bath deposition. Layers of Mo metal at various thicknesses were sputtered on the nanowire surface, and the Mo layers were sulfurized at low temperature, providing in a controlled way few layers of MoS2, in the range from one to three monolayers. The heterostructures were characterized by electron microscopy (SEM, TEM) and spectroscopy (XPS, Raman, PL). The photoelectrochemical properties of the heterostructures were found to depend on the thickness of the pre-deposited Mo film, exhibiting maximum efficiency for moderate values of Mo film thickness. Long-term stability, in relation to similar heterostructures in the literature, has been observed.

scholarly journals Resolving ambiguities in nanowire field-effect transistor characterization

Nanoscale ◽  
2015 ◽  
Vol 7 (43) ◽  
pp. 18188-18197 ◽  
Author(s):  
Sebastian Heedt ◽  
Isabel Otto ◽  
Kamil Sladek ◽  
Hilde Hardtdegen ◽  
Jürgen Schubert ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Evaluation Method ◽  
Surface States ◽  
Profound Impact ◽  
Nanowire Surface ◽  
Dual Gate ◽  
Effect Transistor

The profound impact of InAs nanowire surface states on transistor functionality is quantified using a novel dual-gate FET evaluation method in conjunction with finite element method simulations of nanowire electrostatics.

scholarly journals Theoretical Study of Carbon Clusters in Silicon Carbide Nanowires

2011 ◽  
Vol 2011 ◽  
pp. 1-8
Author(s):  
J. M. Morbec ◽  
R. H. Miwa
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Binding Energies ◽  
Carbon Clusters ◽  
Sic Nanowires ◽  
Nanowire Surface ◽  
Nanowires Growth ◽  
Carbon Coated ◽  
Favorable Configuration ◽  
Small Clusters

Using first-principles methods we performed a theoretical study of carbon clusters in silicon carbide (SiC) nanowires. We examined small clusters with carbon interstitials and antisites in hydrogen-passivated SiC nanowires growth along the [100] and [111] directions. The formation energies of these clusters were calculated as a function of the carbon concentration. We verified that the energetic stability of the carbon defects in SiC nanowires depends strongly on the composition of the nanowire surface: the energetically most favorable configuration in carbon-coated [100] SiC nanowire is not expected to occur in silicon-coated [100] SiC nanowire. The binding energies of some aggregates were also obtained, and they indicate that the formation of carbon clusters in SiC nanowires is energetically favored.

scholarly journals Water droplet dynamics on a heated nanowire surface

2018 ◽  
Vol 113 (25) ◽  
pp. 253703 ◽  
Author(s):  
M. Auliano ◽  
D. Auliano ◽  
M. Fernandino ◽  
P. Zhang ◽  
C. A. Dorao
Keyword(s):  
Water Droplet ◽  
Droplet Dynamics ◽  
Nanowire Surface

scholarly journals Indication of the Coronavirus Model Using a Nanowire Biosensor

Proceedings ◽  
2020 ◽  
Vol 60 (1) ◽  
pp. 50
Author(s):  
Vladimir Generalov ◽  
Olga Naumova ◽  
Dmitry Shcherbakov ◽  
Alexander Safatov ◽  
Boris Zaitsev ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Charge ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
Nanowire Surface ◽  
Before And After ◽  
Effect Transistor ◽  
Current Value ◽  
Silicon On Insulator Technology

The presented results indicate virus-like particles of the coronavirus (CVP) using a nanowire (NW) biosensor based on silicon-on-insulator technology. In the experiment, we used suspensions of CVP and of specific antibodies to the virus. Measurements of the current value of the field-effect transistor before and after the introduction of the CVP on the surface of the nanowire were performed. Results showed antibody + CVP complexes on the phase section with the surface of the nanowire modulate the current of the field-effect transistor; CVP has an electrically positive charge on the phase section “nanowire surface-viral suspension»; antibody + CVP complexes have an electrically negative charge on the phase section “nanowire surface-viral suspension”; the sensitivity of the biosensor is made up of 10−18 M; the time display was 200–300 s.

Hydrazine oxidation at preferentially oriented Pt (100) nanowires array electrodes

2011 ◽  
Vol 1311 ◽  
Author(s):  
S. Garbarino ◽  
A. Ponrouch ◽  
E. Bertin ◽  
D. Guay
Keyword(s):  
Electrocatalytic Oxidation ◽  
Bulk Material ◽  
Xrd Analysis ◽  
Hydrazine Oxidation ◽  
Nanowire Surface ◽  
Increased Activity ◽  
Pt Black ◽  
Nanowires Array ◽  
Scanning Electron ◽  
Pt Nanowires

ABSTRACTIn this study, platinum was electroplated onto bare Ti substrates (Pt black) and through a porous AAO membrane (Pt nanowires). The morphology of the deposits was observed by scanning electron microscopy. Preferential orientation along the (100) direction into the bulk material was evidenced through XRD analysis, as well as at the nanowire surface by using electrochemical characterization. These highly oriented Pt nanowires exhibited an increased activity for the electrocatalytic oxidation of hydrazine oxidation, as compared to Pt black.

scholarly journals Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1434
Author(s):  
Mariem Naffeti ◽  
Pablo Aitor Postigo ◽  
Radhouane Chtourou ◽  
Mohamed Ali Zaïbi
Keyword(s):  
Silicon Nanowires ◽  
Near Infrared ◽  
Surface Passivation ◽  
Silicon Nanowire ◽  
Etching Technique ◽  
Highly Efficient ◽  
Broadband Emission ◽  
New Family ◽  
Nano Coating ◽  
Nanowire Surface

A key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the first time. A metal-assisted chemical etching technique was used to produce the SiNW arrays, while the BiNCs were anchored on the NWs through thermal evaporation. The systematic studies by Scanning Electron Microscopy (SEM), energy dispersive X-ray spectra (EDX), and Fourier Transform Infra-Red (FTIR) spectroscopies highlight the successful decoration of SiNWs by BiNC. The photoluminescence (PL) emission properties of the samples were studied in the visible and near-infrared (NIR) spectral range. Interestingly, nine-fold visible PL enhancement and NIR broadband emission were recorded for the Bi-modified SiNWs. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs (Bi@SiNWs), and thus sheds light on a new family of Bi-doped materials operating in the NIR and covering the important telecommunication wavelengths. Excellent anti-reflectance abilities of ~10% and 8% are observed for pure SiNWs and Bi@SiNWs, respectively, as compared to the Si wafer (50–90%). A large decrease in the recombination activities is also obtained from Bi@SiNWs heterostructures. The reasons behind the superior improvement of the Bi@SiNWs performance are discussed in detail. The findings demonstrate the effectiveness of Bi as a novel surface passivation coating, where Bi@SiNWs heterostructures are very promising and multifunctional for photovoltaics, optoelectronics, and telecommunications.

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