Electrical characteristics and conduction mechanism of microwave-sintered (Ba0.8Sr0.2)(Zr0.1Ti0.8Ce0.1)O3 electronic ceramics

2019 ◽  
Vol 94 (2) ◽  
pp. 175-182
Author(s):  
Sugato Hajra ◽  
Varsa Purohit ◽  
Manisha Sahu ◽  
R. N. P. Choudhary
Keyword(s):  
Conduction Mechanism ◽  
Electrical Characteristics ◽  
Electronic Ceramics

Electrical Characteristics of GaAs Implanted with High Energy (100 MeV) 28Si and 120Sn Ions

2014 ◽  
Vol 661 ◽  
pp. 3-7
Author(s):  
Yousuf Pyar Ali ◽  
Arun M. Narsale ◽  
Brij Mohan Arora
Keyword(s):  
Electrical Conduction ◽  
Conduction Mechanism ◽  
Electrical Characterization ◽  
High Energy ◽  
The Other ◽  
Electrical Characteristics ◽  
Defect States ◽  
Temperature Range ◽  
Current Voltage

In this work we carried out electrical characterization of n-GaAs implanted at 300 K with high energy (100 MeV)28Si and120Sn ions to a fluence of 1x1018ions/m2using current–voltage (I-V) measurements. The as implanted samples and samples annealed in the temperature range 373-1123 K have been investigated. Resistance of the samples obtained from I-V curves recorded over the temperature range 110K-270K indicate that the samples implanted with28Si and annealed up to 623 K and the samples implanted with120Sn and annealed up to 723K shows tunnel assisted hoping conduction mechanism. In the other hand,28Si implanted samples annealed to 723K and 823K and120Sn implanted samples annealed to 823K and 923K the electrical conduction mechanism is dominated by thermal hoping between closed defect states.

Performance and Reliability of Ultrathin Oxynitride Gate Dielectrics Prepared using In-Situ Multiple Rapid Thermal Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
G. Q. Lo ◽  
D. K. Shih ◽  
W. Ting ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Conduction Mechanism ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Charge Trapping ◽  
Processing Parameters ◽  
Time Dependent ◽  
Electrical Characteristics ◽  
Interface Hardness

ABSTRACTThe electrical characteristics of ultrathin oxynitride gate dielectrics prepared by in-situ multiple rapid thermal processing in reactive ambients (O2 and NH3) have been studied. Specifically, the conduction mechanism, charge trapping properties, time-dependent breakdown, and interface hardness in oxynitride films have been characterized as a function of both RTO and RTN processing parameters. In addition, N-channel MOSFET's have been fabricated using oxynitrides as gate dielectrics and their hot carier immunity has been examined and compared with devices with pure thermal oxides. Devices with superior electrical characteristics and reliability have been produced by optimizing RTO/RTN parameters.

Characterization of Metal/Si1-xGex/Si Diodes Fabricated by Cryogenic Processing

1995 ◽  
Vol 379 ◽  
Author(s):  
L. He ◽  
E. Li ◽  
Z.Q. Shi ◽  
R.L. Jiang ◽  
J. L. Liu ◽  
...  
Keyword(s):  
Barrier Height ◽  
Room Temperature ◽  
Conduction Mechanism ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Nitrogen Atmosphere ◽  
Thin Layers ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Cryogenic Processing

ABSTRACTSchottky diodes were fabricated by evaporating metal thin layers on p-Si1-xGex by cryogenic processing. The cryogenic processing, with substrate temperature cooled to as low as 77K (LT), has been successfully used to enhance metal/III-V semiconductor Schottky barrier height[1]. The electrical characteristics of the diodes were investigated by current-voltage (IV) and current-temperature (I-T) measurements. In order to study the effect of silicide formation on diode characteristics, furnace annealing was performed in nitrogen atmosphere at 450°C and 550°C, respectively. Two kinds of samples with gemanium composition x of 0.17 and 0.20 were used. The electrical characteristics showed the barrier height фB decreased with the increase of the gemanium composition. The annealing temperatures up till to 550°C did not affect the I-V characteristics at room temperature, however, the conduction mechanism showed obvious difference comparing to the as-deposited diodes by I-V-T analysis. For Pd as Schottky metal, very similar results were obtained for the LT as-deposited diodes and the ordinary room temperature (RT) deposited diodes after 550° annealing, they both showed thermionic emission dominated conduction mechanism.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Polycaprolactone based membranes for the degradation of diclofenac present in water samples using ZnO nanoparticles as the active agent

MRS Advances ◽  
2020 ◽  
Vol 5 (61) ◽  
pp. 3153-3161
Author(s):  
Marco Antonio Juárez Sánchez ◽  
Miguel Ángel Meléndez Lira ◽  
Celestino Odín Rodríguez Nava
Keyword(s):  
Zno Nanoparticles ◽  
Wastewater Treatment Plants ◽  
Active Agent ◽  
Heterogeneous Photocatalysis ◽  
Nano Particles ◽  
Electrical Characteristics ◽  
Unit Operation ◽  
Fields Of Study ◽  
Drug Contamination ◽  
Positive Results

AbstractDrug contamination in water is one of the current fields of study. Since 1990, the presence of drugs in drinking water has been a concern to scientists and public. In Mexico, these organic compounds are not efficiently removed in wastewater treatment plants; therefore, alternative methodologies have been studied that allow these compounds to have a high percentage of degradation or be completely degraded. One example of these techniques is heterogeneous photocatalysis which has obtained positive results in the degradation of drugs using ZnO nanoparticles. These are commonly selected for their electrical characteristics, even though they disperse in water and an additional unit operation is required to separate them from the liquid medium. To eliminate drugs with nano particles in a single stage, polycaprolactone-based membranes with adhered ZnO nanoparticles, by means of electrospinning, were prepared to degrade drugs such as diclofenac. The technique used has shown to efficiently break down diclofenac in 4 hours according to the capillary electrophoresis readings.

Optical and Electrical Characteristics of Amorphous InGaZnO after Thermal Annealing

2008 ◽  
Author(s):  
Satoshi Taniguchi ◽  
Norihiko Yamaguchi ◽  
Takao Miyajima ◽  
Masao Ikeda
Keyword(s):  
Thermal Annealing ◽  
Electrical Characteristics ◽  
Amorphous Ingazno

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

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