Effects of Sputtering Power, Working Pressure, and Electric Bias on the Deposition Behavior of Ag Films during DC Magnetron Sputtering Considering the Generation of Charged Flux

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

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Low resistivity of Ni–Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

Applied Surface Science ◽

10.1016/j.apsusc.2013.12.071 ◽

2014 ◽

Vol 293 ◽

pp. 55-61 ◽

Cited By ~ 23

Author(s):

JongWoo Lee ◽

K.N. Hui ◽

K.S. Hui ◽

Y.R. Cho ◽

Ho-Hwan Chun

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Zno Thin Films ◽

Dc Magnetron Sputtering ◽

Low Resistivity ◽

Sputtering Power ◽

Doped Zno ◽

Co Doped

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EXPERIMENTAL OBSERVATIONS OF DISK-SHAPED PATTERNS IN Fe FILMS SPUTTERING DEPOSITED ON SILICONE OIL SURFACES

International Journal of Modern Physics B ◽

10.1142/s0217979209049772 ◽

2009 ◽

Vol 23 (14) ◽

pp. 3147-3157 ◽

Cited By ~ 10

Author(s):

YONG-JU ZHANG ◽

SEN-JIANG YU

Keyword(s):

Magnetron Sputtering ◽

Internal Stress ◽

Silicone Oil ◽

Atomic Clusters ◽

Vacuum Condition ◽

Growth Time ◽

Film System ◽

Dc Magnetron Sputtering ◽

Power Deposition ◽

Sputtering Power

We report the experimental observations of large spatially disk-shaped patterns in an iron (Fe) film system deposited on silicone oil surfaces by a DC-magnetron sputtering method. These disk patterns form spontaneously during deposition and grow successively in vacuum condition after deposition. Their nucleation, growth and evolution are strongly dependent on the sputtering power, deposition period and growth time. The experiment indicates that they may result from the spontaneous organization and gathering of the Fe atoms and atomic clusters driven by the internal stress.

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Properties of ZnS Films Deposited by Radio Frequency Magnetron Sputtering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.602-603.966 ◽

2014 ◽

Vol 602-603 ◽

pp. 966-969

Author(s):

Lei Zhang ◽

Jian Huang ◽

Hui Min Yang ◽

Ke Tang ◽

Mei Ai Lin ◽

...

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Annealing Treatment ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

Working Pressure ◽

Glass Substrates ◽

Sputtering Power ◽

Uv Visible ◽

Zns Films

In this work, zinc sulfide (ZnS) thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates. The effects of sputtering power, working pressure, substrate temperature and annealing treatment on the structural and optical properties of ZnS films were studied using X-ray diffraction and UV-visible spectrometer in detailed.

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Influence of Direct Current Magnetron Sputtering Parameters on Electrical Properties of Copper Films

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.37-38.540 ◽

2010 ◽

Vol 37-38 ◽

pp. 540-543

Author(s):

Yin Qun Hua ◽

Rui Fang Chen ◽

Zhong Xiu Niu ◽

Jie Yu

Keyword(s):

Magnetron Sputtering ◽

Substrate Temperature ◽

Zone Model ◽

Temperature Structure ◽

Working Pressure ◽

Cu Films ◽

Film Resistivity ◽

Sputtering Power ◽

Cu Film ◽

Rate Of Increase

Cu thin films were prepared by DC magnetron sputtering on Si substrate, and the resistivities change by adjusting its sputtering parameters. It is found that the changes of the sputtering power and substrate temperature and working pressure can affect significantly the Cu film resistivity (ρ). The Cu films resistivity decreases with the increasing of sputtering power. As the substrate temperature “structure zone model” effect, the Cu film resistivity decreases when the substrate temperature was less than 150°C. The resistivities (ρ) begin to increase gradually at various temperatures ranging from 150°C to 300°C, but the rate of increase is not significant. The resistivity abnormal increases when the substrate temperature was 400°C. The Cu films resistivity increases with argon working gas pressure ranging from 0.15 Pa to 2 Pa.

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HIGH-QUALITY INTRINSIC ZnO FILM FOR THE APPLICATION OF SOLAR CELL GROWN BY ICP-ASSISTED REACTIVE DC MAGNETRON SPUTTERING AT LOW TEMPERATURE

Surface Review and Letters ◽

10.1142/s0218625x07010664 ◽

2007 ◽

Vol 14 (06) ◽

pp. 1083-1087

Author(s):

X. B. XU ◽

S. M. HUANG ◽

Y. W. CHEN ◽

Z. SUN ◽

S. Y. HUANG

Keyword(s):

Solar Cell ◽

Low Temperature ◽

Magnetron Sputtering ◽

Inductively Coupled Plasma ◽

Visible Range ◽

Zno Film ◽

Dc Magnetron Sputtering ◽

Working Pressure ◽

Solar Cell Application ◽

Inductively Coupled

Intrinsic zinc oxide (i- ZnO ) film was prepared for CuInSe 2 (CIS) solar cell application [L. Stolt and J. Hedstrom, Appl. Phys. Lett.62 (1993) 8; D. Rudmann, Ph.D. Thesis, University of Basel, Basel, (2004)] on glass substrate by inductively coupled plasma (ICP)-assisted DC magnetron sputtering and under a quite low temperature of 50°C. The sputtering was done in an Ar and O 2 gas mixture and a ceramic ZnO target was used. The microstructures of the film were investigated by X-ray diffractometer and scanning electron microscope. It was shown that all of the films had a c-axis preferred orientation perpendicular to the substrate. In our work, film with resistivity of 7 × 108Ω· cm and transmittance of about 80% in the visible range was prepared under the conditions of 4 mTorr working pressure and 50°C temperature.

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SPECTROSCOPIC STUDY OF RF MAGNETRON SPUTTERING PLASMA FOR DEPOSITION TI6AL4V THIN FILM

MINAR International Journal of Applied Sciences and Technology ◽

10.47832/2717-8234.3-3.13 ◽

2021 ◽

Vol 03 (03) ◽

pp. 103-110

Author(s):

Dawood S. ALI ◽

Omar M. DAWOOD

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Gas Flow ◽

Plasma Temperature ◽

Optical Emission ◽

Rf Magnetron Sputtering ◽

Plasma Parameters ◽

Working Pressure ◽

Standard Data ◽

Sputtering Power

In this work, RF magnetron sputtering plasma for the deposition of Ti6Al4V thin film has been investigated by using optical emission spectroscopy at argon working pressure of 5×10-3 mbar. The emission lines intensity of the plasma were measured using a spectrometer, and the identify peaks within the selective range of patterns and matched with the standard data from the NIST website to measure the plasma parameters. Since the sputtering power plays an important role to the growth of thin film, so the effect of sputtering power of 50, 75, 100, 125 and 150Watt has been studied on produced plasma parameters. The size of Ti6Al4V sputtering target was 50mm in diameter. The argon gas flow was 40 s ccm. One can observe that the lines intensities increased with increasing the sputtering power. The plasma temperature increases from 1.86 to 2.15 eV, while its density increased from 2.69 ×1018 to 2.94 ×1018 cm-3with increasing the rf power from 50 to 150 W, which effect on sputtering rate.

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