scholarly journals Evolution of electromechanical properties in Fe-doped (Pb,Sr)(Zr,Ti)O3 piezoceramics

2021 ◽  
Vol 10 (3) ◽  
pp. 587-595
Author(s):  
Chuan Chen ◽  
Yan Wang ◽  
Zong-Yue Li ◽  
Chun Liu ◽  
Wen Gong ◽  
...  
Keyword(s):  
Domain Switching ◽  
Piezoelectric Materials ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Bias Field ◽  
Strain Effect ◽  
Recoverable Strain ◽  
Cubic Symmetry ◽  
Defect Dipole ◽  
Field Cycling

AbstractDefects in acceptor-doped perovskite piezoelectric materials have a significant impact on their electrical properties. Herein, the defect mediated evolution of piezoelectric and ferroelectric properties of Fe-doped (Pb,Sr)(Zr,Ti)O3 (PSZT-Fe) piezoceramics with different treatments, including quenching, aging, de-aging, and poling, was investigated systematically. Oxygen vacancies with a cubic symmetry are preserved in the quenched PSZT-Fe ceramics, rendering them robust ferroelectric behaviors. In the aged PSZT-Fe polycrystals, defect dipole between Fe dopant and oxygen vacancy has the same orientation with spontaneous polarization PS, which enables the reversible domain switching and hence leads to the emergence of pinched polarization hysteresis and recoverable strain effect. And the defect dipoles can be gradually disrupted by bipolar electric field cycling, once again endowing the aged materials with representative ferroelectric properties. For the poled PSZT-Fe polycrystals, the defect dipoles are reoriented to be parallel to the applied poling field, and an internal bias field aligning along the same direction emerges simultaneously, being responsible for asymmetric hysteresis loops.

scholarly journals Experimental Investigation of Rate-Dependent Inner Hysteresis Loops in PZT

2005 ◽  
Vol 881 ◽  
Author(s):  
Alexander York ◽  
Stefan Seelecke
Keyword(s):  
Experimental Investigation ◽  
Systematic Study ◽  
Domain Switching ◽  
Piezoelectric Materials ◽  
Relaxation Times ◽  
Hysteresis Loops ◽  
Loading Rates ◽  
Rate Dependent ◽  
Realistic Modeling ◽  
Kinetics Of

AbstractThe rate-dependence of piezoelectric materials resulting from the kinetics of domain switching is an important factor that needs to be included in realistic modeling attempts. This paper provides a systematic study of the rate-dependent hysteresis behavior of a commercially available PZT stack actuator. Experiments covering full as well as minor loops are conducted at different loading rates with polarization and strain recorded. In addition, the creep behavior at different constant levels of the electric field is observed. This provides evidence of kinetics being characterized by strongly varying relaxation times that can be associated with different switching mechanisms.

scholarly journals THE CONTRIBUTION OF ELECTRICAL CONDUCTIVITY, DIELECTRIC PERMITTIVITY AND DOMAIN SWITCHING IN FERROELECTRIC HYSTERESIS LOOPS

2011 ◽  
Vol 01 (01) ◽  
pp. 107-118 ◽  
Author(s):  
HAIXUE YAN ◽  
FAWAD INAM ◽  
GIUSEPPE VIOLA ◽  
HUANPO NING ◽  
HONGTAO ZHANG ◽  
...  
Keyword(s):  
Dielectric Permittivity ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Domain Switching ◽  
Ferroelectric Properties ◽  
Electric Displacement ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Ferroelectric Hysteresis ◽  
Current Electric Field

Triangular voltage waveform was employed to distinguish the contributions of dielectric permittivity, electric conductivity and domain switching in current-electric field curves. At the same time, it is shown how those contributions can affect the shape of the electric displacement — electric field loops (D–E loops). The effects of frequency, temperature and microstructure (point defects, grain size and texture) on the ferroelectric properties of several ferroelectric compositions is reported, including: BaTiO 3; lead zirconate titanate (PZT); lead-free Na 0.5 K 0.5 NbO 3; perovskite-like layer structured A 2 B 2 O 7 with super high Curie point (T c ); Aurivillius phase ferroelectric Bi 3.15 Nd 0.5 Ti 3 O 12; and multiferroic Bi 0.89 La 0.05 Tb 0.06 FeO 3. This systematic study provides an instructive outline in the measurement of ferroelectric properties and the analysis and interpretation of experimental data.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application

1998 ◽  
Vol 541 ◽  
Author(s):  
Tingkai Li ◽  
Fengyan Zhang ◽  
Sheng Teng Hsu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Memory Devices ◽  
Leakage Currents ◽  
Fatigue Characteristics ◽  
Ferroelectric Memory ◽  
Memory Applications

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.

Fabrication and Characterization of Ferroelectric Polymer/TiO2/Al-doped ZnO Structures

2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa
Keyword(s):  
Leakage Current ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Tio2 Films ◽  
Gate Leakage Current ◽  
Poly Vinylidene Fluoride ◽  
Doped Zno ◽  
Fabrication And Characterization

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

A polycrystal hysteresis model for ferroelectric ceramics

2006 ◽  
Vol 462 (2069) ◽  
pp. 1573-1592 ◽  
Author(s):  
Y Su ◽  
G.J Weng
Keyword(s):  
Electric Field ◽  
Hysteresis Loop ◽  
Ferroelectric Properties ◽  
Electric Displacement ◽  
Hysteresis Loops ◽  
Ferroelectric Ceramics ◽  
Domain Growth ◽  
Thermodynamic Approach ◽  
Hysteresis Model ◽  
Self Consistent

Most key elements of ferroelectric properties are defined through the hysteresis loops. For a ferroelectric ceramic, its loop is contributed collectively by its constituent grains, each having its own hysteresis loop when the ceramic polycrystal is under a cyclic electric field. In this paper, we propose a polycrystal hysteresis model so that the hysteresis loop of a ceramic can be calculated from the loops of its constituent grains. In this model a micromechanics-based thermodynamic approach is developed to determine the hysteresis behaviour of the constituent grains, and a self-consistent scheme is introduced to translate these behaviours to the polycrystal level. This theory differs from the classical phenomenological ones in that it is a micromechanics-based thermodynamic approach and it can provide the evolution of new domain concentration among the constituent grains. It also differs from some recent micromechanics studies in its secant form of self-consistent formulation and in its application of irreversible thermodynamics to derive the kinetic equation of domain growth. To put this two-level micromechanics theory in perspective, it is applied to a ceramic PLZT 8/65/35, to calculate its hysteresis loop between the electric displacement and the electric field ( D versus E ), and the butterfly-shaped longitudinal strain versus the electric field relation ( ϵ versus E ). The calculated results are found to be in good quantitative agreement with the test data. The corresponding evolution of new domain concentration c 1 and the individual hysteresis loops of several selected grains—along with those of the overall polycrystal—are also illustrated.

Non-linear dynamics of the Villari effect in the presence of a non-homogeneous magnetic field

2018 ◽  
Vol 233 (4) ◽  
pp. 431-440
Author(s):  
Andrzej Rysak ◽  
Magdalena Gregorczyk
Keyword(s):  
Magnetic Field ◽  
Time Series ◽  
Hysteresis Loops ◽  
Bias Field ◽  
Homogeneous Magnetic Field ◽  
Operating Conditions ◽  
Bias Magnetic Field ◽  
Linear Dynamics ◽  
Non Linear ◽  
Magnetostrictive Devices

Investigations of systems with an active magnetostrictive element generally assume the presence of an external homogeneous bias magnetic field. This article, however, presents the results of a study investigating a bimorph magnetostrictive-aluminium beam vibrating in a non-homogeneous bias field. By comparing results obtained under different operating conditions of the system, the combined effect of the non-linear beam stress and the non-homogeneous external magnetic field on the dynamics of the Villari phenomenon is determined. The preliminary results prove that the application of non-linear magnetic fields to the magnetostrictive devices ensures the extension of energy harvesting bandwidth of these devices and can be used to improve their control possibilities. A study of time series and hysteresis loops provides more detailed information about the non-linear magnetization and dynamics of the system.

Exchange Bias Properties in Bulk Ni45Co5Mn38Sn12 Heusler Alloy

2014 ◽  
Vol 875-877 ◽  
pp. 272-276 ◽  
Author(s):  
Chao Jing ◽  
Ye Jun Yang ◽  
Dong Hua Yu ◽  
Zhe Li ◽  
Xiao Long Wang ◽  
...  
Keyword(s):  
Hysteresis Loop ◽  
Exchange Bias ◽  
Heusler Alloy ◽  
Magnetic Hysteresis ◽  
Hysteresis Loops ◽  
Bias Field ◽  
Magnetic Hysteresis Loop ◽  
Zero Field ◽  
Co Substitution ◽  
Exchange Bias Field

We report the exchange bias properties in the bulk Ni45Co5Mn38Sn12quaternary Heusler alloy. The ferromagnetic (FM) –antiferromagnetic (AFM) interactions get reinforced after the Co substitution for Ni in the Ni-Mn-Sn alloy, which increase the exchange bias field (HE). A maximum shift in hysteresis loops of 306 Oe was observed in the 10 kOe field cooled sample. The origin of this large exchange bias field has been discussed. Magnetic hysteresis loop obtained in the zero field cooled (ZFC) mode shows double-shifted loop, and the reason of this phenomenon has been explained in detail.

Dynamic characteristics of defect dipoles in Mn-doped 0.24Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystal

CrystEngComm ◽  
2019 ◽  
Vol 21 (2) ◽  
pp. 348-355 ◽  
Author(s):  
Xudong Qi ◽  
Enwei Sun ◽  
Weiming Lü ◽  
Shiyang Li ◽  
Bin Yang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Dynamic Characteristics ◽  
Hysteresis Loops ◽  
Bias Field ◽  
Internal Bias ◽  
Ferroelectric Hysteresis ◽  
Mn Doped ◽  
Internal Bias Field

The dynamic ferroelectric hysteresis loops with internal bias field were investigated in poled and aged Mn-doped 0.24Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystal.

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