Anodic oxidation of silicon carbide

1974 ◽  
Vol 23 (1) ◽  
pp. 23-29 ◽  
Author(s):  
G. Restelli ◽  
A. Ostidich ◽  
A. Manara
Keyword(s):  
Silicon Carbide ◽  
Anodic Oxidation

Anodic oxidation of polycrystalline 3C-silicon carbide thin films during MEMS operation

2009 ◽  
Vol 19 (3) ◽  
pp. 035024 ◽  
Author(s):  
F Liu ◽  
C S Roper ◽  
I Laboriante ◽  
B Bush ◽  
J R Chu ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Anodic Oxidation

General theory of anodic oxidation of silicon and its compounds (analytical review)

2021 ◽  
Vol 4 ◽  
pp. 15-24
Author(s):  
L. P. Mileshko ◽  
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
General Theory ◽  
Anodic Oxidation ◽  
Linear Dependence ◽  
Anodic Oxide ◽  
Environmental Safety ◽  
Analytical Review ◽  
Anodic Reactions ◽  
Silicon Silicon

The identity of the mechanisms of anodic oxide films formation on silicon, silicon carbide, and silicon nitride is proved, which can be used as the basis for the General theory of anodic oxidation of these materials. The processes of galvanostatic anodic oxidation of Si, SiC and Si3N4 in the intervals of linear dependence of the formation voltage on time proceed with activation control. The limiting stages in all cases are the anodic reactions of the formation of intermediate SiO monoxide. Preference should be given to electrolytes with lower values of the potential environmental hazard criterion of the electrolyte, which have a higher degree of environmental safety.

scholarly journals Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate

2017 ◽  
Vol 28 (10) ◽  
pp. 105709 ◽  
Author(s):  
Francesco Colangelo ◽  
Vincenzo Piazza ◽  
Camilla Coletti ◽  
Stefano Roddaro ◽  
Fabio Beltram ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Anodic Oxidation ◽  
Composition Analysis ◽  
Oxide Composition ◽  
Graphene Layers ◽  
Silicon Carbide Substrate ◽  
Local Anodic Oxidation

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

1991 ◽  
Vol 49 ◽  
pp. 920-921
Author(s):  
K. B. Alexander ◽  
P. F. Becher
Keyword(s):  
Silicon Carbide ◽  
High Resolution Electron Microscopy ◽  
Ceramic Composites ◽  
Interface Debonding ◽  
Resolution Electron ◽  
Microstructural Evaluation ◽  
Carbon Coated ◽  
Electron Energy Loss ◽  
Interfacial Films ◽  
Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

1995 ◽  
Vol 53 ◽  
pp. 350-351
Author(s):  
L. A. Giannuzzi ◽  
C. A. Lewinsohn ◽  
C. E. Bakis ◽  
R. E. Tressler
Keyword(s):  
Silicon Carbide ◽  
Creep Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Creep ◽  
Excess Carbon ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Carbon Core ◽  
Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

Sign in / Sign up

Export Citation Format

Share Document