PC system for improving the control of reactive gas dosage in sputtering processes for film deposition

AbstractThe presence of a second reactive gas in the magnetron sputtering chamber makes the process much more complicated, and the process control much more difficult than in the case of a single reactive gas. Macroscopic models have been developed in order to explain the complex phenomena and to provide support for the process control. These models are able to explain the nonlinearities of the process and the strong coupling between the control channels.This paper introduces a model created with the intention to of gaining a good grasp of the process, especially regarding the conditions necessary to obtain the required stoichiometry of the film deposited on the substrate. For this purpose, we modelled the formation of the desired ternary compound both directly from the available particle fluxes and from intermediary compounds. The surface of the substrate is divided into eight dynamically variable regions, covered by different compounds, each exposed to the streams of five types of particles.We present the analytical model and provide simulation results in order to demonstrate its capability toof describeing the nonlinear phenomena, which that characterisze the two-gas sputtering process.

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Nanocrystal-ZnO Thin Film Deposition by a Novel Reactive Gas-Timing RF Magnetron Sputtering Provided for UV Photodetectors

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.93-94.537 ◽

2010 ◽

Vol 93-94 ◽

pp. 537-540

Author(s):

P. Panprom ◽

S. Porntheeraphat ◽

Win Bunjongpru ◽

T. Tiwawong ◽

W. Yamwong ◽

...

Keyword(s):

Thin Film ◽

Active Layer ◽

Rf Magnetron Sputtering ◽

Thin Film Deposition ◽

Film Deposition ◽

Zno Thin Film ◽

Uv Detector ◽

Si Substrates ◽

Msm Photodetector ◽

Reactive Gas

The fabrication and characterizations of nanocrystal-ZnO thin film used as active layer of MSM-photodetector structure are reported. The ZnO thin film were successfully sputtered on SiO2/Si substrates without heating or annealing processes by using a novel reactive gas-timing technique. In our experiment, the ZnO thin film properties with different gas-timing ratio of Ar/O2 were investigated. For fabricating of UV detector, the Al interdigitate electrode was deposited on SiO2/Si substrate by DC sputtering process and ZnO thin film was deposited as active layer. The response wavelength peak occurs at around 380 nm corresponding to ZnO energy bandgap of 3.2 eV .The I-V measurements indicates the Schottky behavior of ZnO on Al contact.

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Metallorganic Chemical Vapor Deposition of Ir Films With Iridium Acetylacetonate and Carbonyl Precursors

MRS Proceedings ◽

10.1557/proc-541-101 ◽

1998 ◽

Vol 541 ◽

Cited By ~ 6

Author(s):

Y.-M. Sun ◽

J. Endle ◽

K. Smith ◽

J. G. Ekerdt ◽

R. L. Hance ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Gas Phase ◽

Vapor Deposition ◽

Film Growth ◽

Chemical Vapor ◽

Film Deposition ◽

Film Deposition Rate ◽

Phase Nucleation ◽

Temperature Programmed ◽

Reactive Gas

AbstractIridium acetylacetonate, dicarbonylacetylacetonato iridium, and tetrakisiridium dodecacarbonyl (iridium carbonyl) have been evaluated for metallorganic chemical vapor deposition (CVD) of pure iridium films. Temperature programmed mass spectroscopy reveals that iridium tris-acetylacetonate and dicarbonylacetylactonato iridium have high thermal stability and sublime at 200 and 100 °C in vacuum, respectively. Iridium carbonyl decomposes upon sublimation at temperatures above 120 °C. Pure CVD Ir films were obtained using iridium carbonyl; however, carbon is incorporated into the iridium films with the iridium trisacetylacetonate and dicarbonylacetylactonato iridium precursors unless a reactive gas, such as oxygen is co-dosed. Co-dosed oxygen also increases the film deposition rate and significantly decreases the film growth temperatures. Particles were found on the films grown with iridium carbonyl between 280 to 400 °C, indicating that gas phase nucleation occurred during deposition.

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Characterization of Sputtered Films using the Scanning Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100070667 ◽

1973 ◽

Vol 31 ◽

pp. 44-45

Author(s):

R. F. Schneidmiller ◽

W. F. Thrower ◽

C. Ang

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Thin Film Deposition ◽

Film Deposition ◽

Sputtered Films ◽

Plasma Sputtering ◽

Microelectronic Devices ◽

Control Film ◽

Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

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Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100089652 ◽

1991 ◽

Vol 49 ◽

pp. 1068-1069

Author(s):

M. Grant Norton ◽

C. Barry Carter

Keyword(s):

Thin Film ◽

Thin Films ◽

Laser Ablation ◽

Substrate Surface ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Thin Film Deposition ◽

Film Deposition ◽

Laser Ablation Process ◽

Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106399 ◽

1988 ◽

Vol 46 ◽

pp. 866-867

Author(s):

E. L. Hall ◽

A. Mogro-Campero ◽

L. G. Turner ◽

N. Lewis

Keyword(s):

Thin Film ◽

Thin Film Deposition ◽

Superconducting Films ◽

Electron Beam Evaporation ◽

Film Deposition ◽

Silicon Substrates ◽

Superconducting Properties ◽

Sequential Electron ◽

Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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Layered and ion implantation specimens as possible reference materials for the electron-probe microanalysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100132893 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1652-1653

Author(s):

G. Remond ◽

R.H. Packwood ◽

C. Gilles ◽

S. Chryssoulis

Keyword(s):

Ion Implantation ◽

Reference Materials ◽

Analytical Techniques ◽

Thin Film Deposition ◽

Film Deposition ◽

X Ray ◽

Spatially Resolved ◽

Analytical Expressions ◽

Original Approach ◽

Depth Concentration

Merits and limitations of layered and ion implanted specimens as possible reference materials to calibrate spatially resolved analytical techniques are discussed and illustrated for the case of gold analysis in minerals by means of x-ray spectrometry with the EPMA. To overcome the random heterogeneities of minerals, thin film deposition and ion implantation may offer an original approach to the manufacture of controlled concentration/ distribution reference materials for quantification of trace elements with the same matrix as the unknown.In order to evaluate the accuracy of data obtained by EPMA we have compared measured and calculated x-ray intensities for homogeneous and heterogeneous specimens. Au Lα and Au Mα x-ray intensities were recorded at various electron beam energies, and hence at various sampling depths, for gold coated and gold implanted specimens. X-ray intensity calculations are based on the use of analytical expressions for both the depth ionization Φ (ρz) and the depth concentration C (ρz) distributions respectively.

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