Amorphous Thin-Film Devices

Author(s):  
D.E. CARLSON
1967 ◽  
Vol 34 (2) ◽  
pp. 97 ◽  
Author(s):  
H. Freller ◽  
K.G. Günther
Keyword(s):  

2020 ◽  
Vol 59 (SN) ◽  
pp. SN1015
Author(s):  
Hideyuki Kanehara ◽  
Yuki Araki ◽  
Hiroyasu Katsuno ◽  
Toshitaka Nakada

Nano Energy ◽  
2021 ◽  
Vol 83 ◽  
pp. 105827
Author(s):  
Kamala Khanal Subedi ◽  
Adam B. Phillips ◽  
Niraj Shrestha ◽  
Fadhil K. Alfadhili ◽  
Anna Osella ◽  
...  

2021 ◽  
Vol 327 ◽  
pp. 112786
Author(s):  
Kazuki Ueda ◽  
Sang-Hyo Kweon ◽  
Hirotaka Hida ◽  
Yoshiharu Mukouyama ◽  
Isaku Kanno

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 204
Author(s):  
Yuhao Zhou ◽  
Bowen Ji ◽  
Minghao Wang ◽  
Kai Zhang ◽  
Shuaiqi Huangfu ◽  
...  

Remarkable progress has been made in the high resolution, biocompatibility, durability and stretchability for the implantable brain-computer interface (BCI) in the last decades. Due to the inevitable damage of brain tissue caused by traditional rigid devices, the thin film devices are developing rapidly and attracting considerable attention, with continuous progress in flexible materials and non-silicon micro/nano fabrication methods. Therefore, it is necessary to systematically summarize the recent development of implantable thin film devices for acquiring brain information. This brief review subdivides the flexible thin film devices into the following four categories: planar, open-mesh, probe, and micro-wire layouts. In addition, an overview of the fabrication approaches is also presented. Traditional lithography and state-of-the-art processing methods are discussed for the key issue of high-resolution. Special substrates and interconnects are also highlighted with varied materials and fabrication routines. In conclusion, a discussion of the remaining obstacles and directions for future research is provided.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.


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