A low-voltage low-power instrumentation amplifier based on supply current sensing technique

Author(s):  
Leila Safari ◽  
Shahram Minaei ◽  
Giuseppe Ferri ◽  
Vincenzo Stornelli
2019 ◽  
Vol 70 (5) ◽  
pp. 393-399 ◽  
Author(s):  
Vilem Kledrowetz ◽  
Roman Prokop ◽  
Lukas Fujcik ◽  
Michal Pavlik ◽  
Jiří Háze

Abstract Nowadays, the technology advancements of signal processing, low-voltage low-power circuits and miniaturized circuits have enabled the design of compact, battery-powered, high performance solutions for a wide range of, particularly, biomedical applications. Novel sensors for human biomedical signals are creating new opportunities for low weight wearable devices which allow continuous monitoring together with freedom of movement of the users. This paper presents the design and implementation of a novel miniaturized low-power sensor in integrated circuit (IC) form suitable for wireless electromyogram (EMG) systems. Signal inputs (electrodes) are connected to this application-specific integrated circuit (ASIC). The ASIC consists of several consecutive parts. Signals from electrodes are fed to an instrumentation amplifier (INA) with fixed gain of 50 and filtered by two filters (a low-pass and high-pass filter), which remove useless signals and noise with frequencies below 20 Hz and above 500 Hz. Then signal is amplified by a variable gain amplifier. The INA together with the reconfigurable amplifier provide overall gain of 50, 200, 500 or 1250. The amplified signal is then converted to pulse density modulated (PDM) signal using a 12-bit delta-sigma modulator. The ASIC is fabricated in TSMC0.18 mixed-signal CMOS technology.


2014 ◽  
Vol 43 (11) ◽  
pp. 1597-1614 ◽  
Author(s):  
Nikola Katic ◽  
Ibrahim Kazi ◽  
Armin Tajalli ◽  
Alexandre Schmid ◽  
Yusuf Leblebici

2020 ◽  
Vol 12 (3) ◽  
pp. 168-174
Author(s):  
Rashmi Sahu ◽  
Maitraiyee Konar ◽  
Sudip Kundu

Background: Sensing of biomedical signals is crucial for monitoring of various health conditions. These signals have a very low amplitude (in μV) and a small frequency range (<500 Hz). In the presence of various common-mode interferences, biomedical signals are difficult to detect. Instrumentation amplifiers (INAs) are usually preferred to detect these signals due to their high commonmode rejection ratio (CMRR). Gain accuracy and CMRR are two important parameters associated with any INA. This article, therefore, focuses on the improvement of the gain accuracy and CMRR of a low power INA topology. Objective: The objective of this article is to achieve high gain accuracy and CMRR of low power INA by having high gain operational amplifiers (Op-Amps), which are the building blocks of the INAs. Methods: For the implementation of the Op-Amps and the INAs, the Cadence Virtuoso tool was used. All the designs and implementation were realized in 0.18 μm CMOS technology. Results: Three different Op-Amp topologies namely single-stage differential Op-Amp, folded cascode Op-Amp, and multi-stage Op-Amp were implemented. Using these Op-Amp topologies separately, three Op-Amp-based INAs were realized and compared. The INA designed using the high gain multistage Op-Amp topology of low-frequency gain of 123.89 dB achieves a CMRR of 164.1 dB, with the INA’s gain accuracy as good as 99%, which is the best when compared to the other two INAs realized using the other two Op-Amp topologies implemented. Conclusion: Using very high gain Op-Amps as the building blocks of the INA improves the gain accuracy of the INA and enhances the CMRR of the INA. The three Op-Amp-based INA designed with the multi-stage Op-Amps shows state-of-the-art characteristics as its gain accuracy is 99% and CMRR is as high as 164.1 dB. The power consumed by this INA is 29.25 μW by operating on a power supply of ±0.9V. This makes this INA highly suitable for low power measurement applications.


2017 ◽  
Vol MCSP2017 (01) ◽  
pp. 7-10 ◽  
Author(s):  
Subhashree Rath ◽  
Siba Kumar Panda

Static random access memory (SRAM) is an important component of embedded cache memory of handheld digital devices. SRAM has become major data storage device due to its large storage density and less time to access. Exponential growth of low power digital devices has raised the demand of low voltage low power SRAM. This paper presents design and implementation of 6T SRAM cell in 180 nm, 90 nm and 45 nm standard CMOS process technology. The simulation has been done in Cadence Virtuoso environment. The performance analysis of SRAM cell has been evaluated in terms of delay, power and static noise margin (SNM).


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