Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

2005 ◽  
Vol 252 (5) ◽  
pp. 1876-1882 ◽  
Author(s):  
Xinhong Cheng ◽  
Zhaorui Song ◽  
Jun Jiang ◽  
Yuehui Yu
Keyword(s):  
Gate Dielectric ◽  
Silicon On Insulator ◽  
Dielectric Films ◽  
Thin Silicon ◽  
Al2o3 Gate Dielectric

scholarly journals Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation

2002 ◽  
Vol 38 (4) ◽  
pp. 157 ◽  
Author(s):  
B.K. Choi ◽  
D.M. Fleetwood ◽  
L.W. Massengill ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Dielectric Films ◽  
Heavy Ion Irradiation ◽  
Al2o3 Gate Dielectric

Engineering epitaxial γ-Al2O3 gate dielectric films on 4H-SiC

2007 ◽  
Vol 102 (10) ◽  
pp. 104112 ◽  
Author(s):  
Carey M. Tanner ◽  
Michael F. Toney ◽  
Jun Lu ◽  
Hans-Olof Blom ◽  
Monica Sawkar-Mathur ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Dielectric Films ◽  
Al2o3 Gate Dielectric

Impact of moisture on charge trapping and flatband voltage in Al2O3 gate dielectric films

2002 ◽  
Vol 81 (14) ◽  
pp. 2608-2610 ◽  
Author(s):  
Sufi Zafar ◽  
A. Callegari ◽  
Vijay Narayanan ◽  
Supratik Guha
Keyword(s):  
Gate Dielectric ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Flatband Voltage ◽  
Al2o3 Gate Dielectric

Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

2007 ◽  
Vol 91 (20) ◽  
pp. 203510 ◽  
Author(s):  
Carey M. Tanner ◽  
Ya-Chuan Perng ◽  
Christopher Frewin ◽  
Stephen E. Saddow ◽  
Jane P. Chang
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Dielectric Films ◽  
Layer Deposition ◽  
Al2o3 Gate Dielectric

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

2021 ◽  
Vol 135 ◽  
pp. 106038
Author(s):  
Cong Wang ◽  
Yu-Chen Wei ◽  
Xiao Tan ◽  
Luqman Ali ◽  
Chang-Qiang Jing
Keyword(s):  
Gate Dielectric ◽  
Gan Hemt ◽  
Al2o3 Gate Dielectric

Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator

2017 ◽  
Vol 56 (10) ◽  
pp. 105503
Author(s):  
Kiichi Furukawa ◽  
Akinobu Teramoto ◽  
Rihito Kuroda ◽  
Tomoyuki Suwa ◽  
Keiichi Hashimoto ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Flat Surface ◽  
Silicon On Insulator ◽  
Thin Silicon ◽  
Ion Implanted
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