Composition and structure variation for magnetron sputtered tantalum oxynitride thin films, as function of deposition parameters

AbstractPbTiO3 thin films on Si (100) plane were prepared by the DC reactive multitarget cosputtering technique. The film composition and structure were examined as a function of deposition parameters. The crystal structure and microstructure of PbTiO3 thin film deposited on Si at low substrate temperature of 200°C were examined as a fuction of post-annealing temperature by X-ray diffraction and transmission electron microscopy.The ferroelectric domain configurations were analyzed by plane-view TEM. The preferred orientation of PbTiO3 thin films deposited on MgO (100) and sapphire (1102) at high substrate temperature of 520°C were also examined.

Download Full-text

Influence of Deposition Parameters on the Composition and Structure of Reactively Sputtered Nanocomposite TaC/a-C:H Thin Films

Journal of Materials Research ◽

10.1557/jmr.2005.0324 ◽

2005 ◽

Vol 20 (9) ◽

pp. 2583-2596 ◽

Cited By ~ 18

Author(s):

Ryan D. Evans ◽

Jane Y. Howe ◽

James Bentley ◽

Gary L. Doll ◽

Jeffrey T. Glass

Keyword(s):

Thin Films ◽

Bias Voltage ◽

Flow Rate ◽

Vapor Deposition ◽

Rotation Rate ◽

Tantalum Carbide ◽

Process Conditions ◽

Deposition Parameters ◽

Composition And Structure ◽

Dc Bias

The properties of nanocomposite tantalum carbide/amorphous hydrocarbon (TaC/a-C:H) thin films depend closely on reactive magnetron sputtering deposition process conditions. The chemical composition and structure trends for TaC/a-C:H films were obtained as a function of three deposition parameters: acetylene flow rate, applied direct current (dc) bias voltage, and substrate carousel rotation rate. Films were deposited according to a 23 factorial experimental design to enable multiple linear regression modeling of property trends. The Ta/C atomic ratio, hydrogen content, total film thickness, TaC crystallite size, and Raman spectra were statistically dependent on acetylene flow rate, applied dc bias voltage, or both. Transmission electron microscopy revealed a nanometer-scale lamellar film structure, the periodicity of which was affected mostly by substrate carousel rotation rate. The empirical property trends were interpreted with respect to hypothesized growth mechanisms that incorporate elements of physical vapor deposition and plasma-enhanced chemical vapor deposition.

Download Full-text

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100089652 ◽

1991 ◽

Vol 49 ◽

pp. 1068-1069

Author(s):

M. Grant Norton ◽

C. Barry Carter

Keyword(s):

Thin Film ◽

Thin Films ◽

Laser Ablation ◽

Substrate Surface ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Thin Film Deposition ◽

Film Deposition ◽

Laser Ablation Process ◽

Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Download Full-text

Influence of deposition parameters on the optical absorption of amorphous silicon thin films

Physical Review Research ◽

10.1103/physrevresearch.2.033308 ◽

2020 ◽

Vol 2 (3) ◽

Author(s):

Lukas Terkowski ◽

Iain W. Martin ◽

Daniel Axmann ◽

Malte Behrendsen ◽

Felix Pein ◽

...

Keyword(s):

Thin Films ◽

Optical Absorption ◽

Amorphous Silicon ◽

Silicon Thin Films ◽

Deposition Parameters

Download Full-text

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.75.202 ◽

2010 ◽

Vol 75 ◽

pp. 202-207

Author(s):

Victor Ríos ◽

Elvia Díaz-Valdés ◽

Jorge Ricardo Aguilar ◽

T.G. Kryshtab ◽

Ciro Falcony

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Room Temperature ◽

Pulsed Laser ◽

Chemical Characterization ◽

Laser Deposition ◽

Nominal Composition ◽

Deposition Parameters ◽

The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Download Full-text

Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

MRS Proceedings ◽

10.1557/proc-403-391 ◽

1995 ◽

Vol 403 ◽

Cited By ~ 1

Author(s):

T. Akasaka ◽

D. He ◽

I. Shimizu

Keyword(s):

Thin Films ◽

Atomic Hydrogen ◽

Polycrystalline Silicon ◽

In Situ Observation ◽

Layer By Layer ◽

High Quality ◽

Deposition Parameters ◽

Columnar Grains ◽

Step Growth

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

Download Full-text

Improved Morphology of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) Thin Films for All-Electrospray-Coated Organic Photovoltaic Cells

Advances in Materials Science and Engineering ◽

10.1155/2016/9734854 ◽

2016 ◽

Vol 2016 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Yingjie Liao ◽

Takeshi Fukuda ◽

Norihiko Kamata

Keyword(s):

Thin Films ◽

High Performance ◽

Photovoltaic Cells ◽

Spray Coating ◽

Organic Photovoltaic ◽

Organic Photovoltaic Cells ◽

Ambient Conditions ◽

Deposition Parameters ◽

Coating Methods ◽

Organic Devices

Spray coating technique has been established as a promising substitute for the traditional coating methods in the fabrication of organic devices in many reports recently. Control of film morphology at the microscopic scale is critical if spray-coated devices are to achieve high performance. Here we investigate electrospray deposition protocols for the fabrication of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films with a single additive system under ambient conditions at room temperature. Critical deposition parameters including solution composition, applied voltage, and relative humidity are discussed systematically. Optimized process for preparing homogenous PEDOT:PSS thin films is applied to all-electrospray-coated organic photovoltaic cells and contributes to a power conversion efficiency comparable to that of the corresponding all-spin-coated device.

Download Full-text

The Materials Science of “Permeable Polysilicon” Thin Films

MRS Proceedings ◽

10.1557/proc-687-b7.3 ◽

2001 ◽

Vol 687 ◽

Author(s):

George M Dougherty ◽

Timothy Sands ◽

Albert P. Pisano

Keyword(s):

Thin Films ◽

Residual Stress ◽

Materials Science ◽

Single Step ◽

Process Window ◽

Silicon Thin Films ◽

Growth Regime ◽

Deposition Parameters ◽

Simple Kinetic Model ◽

The Relationship

AbstractPolycrystalline silicon thin films that are permeable to fluids, known as permeable polysilicon, have been reported by several researchers. Such films have great potential for the fabrication of difficult to make MEMS structures, but their use has been hampered by poor process repeatability and a lack of physical understanding of the origin of film permeability and how to control it. We have completed a methodical study of the relationship between process, microstructure, and properties for permeable polysilicon thin films. As a result, we have determined that the film permeability is caused by the presence of nanoscale pores, ranging from 10-50 nm in size, that form spontaneously during LPCVD deposition within a narrow process window. The unusual microstructure within this process window corresponds to the transition between a semicrystalline growth regime, exhibiting tensile residual stress, and a columnar growth regime exhibiting compressive residual stress. A simple kinetic model is proposed to explain the unusual morphology within this transition regime. It is determined that measurements of the film residual stress can be used to tune the deposition parameters to repeatably produce permeable films for applications. The result is a convenient, single-step process that enables the elegant fabrication of many previously challenging structures.

Download Full-text

In-Situ Diagnostics at High Pressures: Ellipsometric and Rheed Studies of the Growth of Yba2Cu3O7

MRS Proceedings ◽

10.1557/proc-502-237 ◽

1997 ◽

Vol 502 ◽

Cited By ~ 4

Author(s):

Dave H. A. Blank ◽

Horst Rogalla

Keyword(s):

Thin Films ◽

High Pressures ◽

High Vacuum ◽

Pulsed Laser ◽

Complex Oxide ◽

High Energy ◽

Diagnostic Tools ◽

Heteroepitaxial Growth ◽

Deposition Parameters

ABSTRACTPulsed Laser and Sputter Deposition are used for the fabrication of complex oxide thin films at relatively high oxygen pressures (up to 0.5 mBar). This high pressure hampers the application of a number of in-situ diagnostic tools. One of the exceptions is ellipsometry. Using this technique we studied in-situ the growth of off-axis sputtered Yba2Cu3O6+x thin films on (001) SrTiO3 as a function of the deposition parameters. Furthermore, the oxidation process from O(6) to O(7) has been studied by performing spectroscopic ellipsometry during isobaric cooling procedures.Another suitable in-situ monitoring technique for the growth of thin films is Reflection High Energy Electron Diffraction (RHEED). In general this is a (high) vacuum technique. Here, we present an RHEED-system in which we can observe clear diffraction patterns up to a deposition pressure of 0.5 mBar. The system has been used for in-situ monitoring of the heteroepitaxial growth of YBa2Cu3 06+x on SrTiO3 by pulsed laser deposition.

Download Full-text