Analysis on ground surface in ultrasonic face grinding of silicon carbide (SiC) ceramic with minor vibration amplitude

The SiC ceramic ductile grinding, which can obtain crack-free ground surface, is a challenge in brittle material machining. To understand the brittle material ductile grinding mechanism in the nanoscale, a molecular dynamics (MD) model is built to study the single diamond grit grinding silicon carbide ceramic. Through analyzing the MD simulation process, the grit forces the SiC to deform and form the chip through the plastic deformation and flow. The ground surface has no crack on the surface and damage layer thickness is less than one atom layer under the nanoscale depth of cut, which indicates the nanogrinding can achieve the pure ductile grinding for the SiC ceramic and obtain a crack-free and high-quality ground surface. Grinding force, stress, temperature, and specific energy increase with the wheel speed and depth of cut due to the higher grinding speed and a smaller depth of cut can generate a higher density of defects (vacancies, interstitial atoms, and dislocations) on the workpiece, which can make the silicon carbide ceramic more ductile. The high wheel speed is favorable for the ductile grinding.

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Reclamation of Abrasive Slurry to Obtain SiC Ceramic Material

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.905.333 ◽

2022 ◽

Vol 905 ◽

pp. 333-337

Author(s):

Sheng Fu Yang ◽

Chun Liang Chen ◽

Kuang Li Chien ◽

Chih Chao Liang ◽

Hsien Ho Chuo

Keyword(s):

Silicon Carbide ◽

Chemical Separation ◽

Distribution Analysis ◽

X Ray Diffraction ◽

X Ray ◽

Sic Ceramic ◽

Illegal Waste Disposal ◽

Main Component ◽

The Cost ◽

Illegal Waste

In the period of silicon and silicon carbide wafer slicing process, the abrasive oil, silicon carbide (SiC), silicon and trace elements e.g., iron, zinc, copper, and nickel is generated as an oily mixture of insoluble matter. The SiC is the main component (>70%) in the abrasive slurry and the extraction of SiC from the slurry can eliminate the risk of illegal waste disposal and reduce the cost for the enterprises. In this study, a chemical separation process is applied to remove silicon particles and SiC can be extracted from the slurry mixtures. The X-ray diffraction analysis revealed that recycled material is moissanite with two crystalline polymorphs. The 3C and 6H X-ray powder pattern is observed and the cubic and hexagonal crystalline structure is revealed. The particle size distribution analysis showed that median value of purified SiC powder material is 9.8 μm.

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Experimental Study of SiC Ceramic Grinding Subsurface Cracks

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1027.146 ◽

2014 ◽

Vol 1027 ◽

pp. 146-149

Author(s):

Min Hui Liu ◽

Fei Hu Zhang ◽

Guo Dong Lu

Keyword(s):

Silicon Carbide ◽

Surface Layer ◽

Large Diameter ◽

Maximum Depth ◽

Surface Cracks ◽

Subsurface Cracks ◽

Sic Ceramic ◽

Ceramic Grinding ◽

The Impact ◽

Silicon Carbide Ceramics

Silicon carbide ceramics with its excellent physical and mechanical properties have become the preferred material for space large diameter mirror. Diamond wheel grinding is the main way of SiC ceramics forming processing. Subsurface cracks is generated due to the high hardness and brittleness of the material after grinding. In order to remove the impact of cracks, poishing processing with very low efficiency is applied, so it is significant to control the depth of silicon carbide ceramic grinding subsurface cracks and shorten the processing cycle.In this paper grinding experiment of SiC ceramic is conducted. The method of cross-section polishing combined with scanning electron microscope observation is used to research grinding subsurface cracks. The depth of broken surface layer and the maximum depth of sub-surface cracks were proposed to evaluate the grinding subsurface cracks. The result show broken surface layer depth and the maximum depth of sub-surface cracks increase with the decreasement of spindle speed, and increasement of feed rate and grinding depth.

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The Effect of Overlap Ratio and Silicon Carbide Wheel Grinder on Vibration Amplitude and Surface Roughness for Material OCR12VM.

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/662/5/052005 ◽

2019 ◽

Vol 662 ◽

pp. 052005

Author(s):

F C Putra ◽

Suhardjono ◽

Sampurno

Keyword(s):

Surface Roughness ◽

Silicon Carbide ◽

Vibration Amplitude ◽

Overlap Ratio

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Optimization of Cutting Edge Truncation Depth for Ultrasonically Assisted Grinding to Finish Mirror Surface

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.76-78.88 ◽

2009 ◽

Vol 76-78 ◽

pp. 88-93 ◽

Cited By ~ 3

Author(s):

Keisuke Hara ◽

Hiromi Isobe ◽

Akira Kyusojin

Keyword(s):

Ground Surface ◽

Optimization Techniques ◽

Cutting Edge ◽

Mirror Surface ◽

Skilled Workers ◽

Ultrasonic Oscillation ◽

Oscillation Effect ◽

Grinding Conditions ◽

Grinding Technique ◽

Face Grinding

High precision mold grinding technique to obtain mirror surface is required which realizes minimization or omission of final polishing by skilled workers. In the previous reports, ultrasonic diamond grinding experiments were carried out to confirm ultrasonic oscillation effect for die steel face grinding. Smooth and glossy surfaces were obtained successfully and little abrasive worn out was found. In the above techniques require cutting edge truncation because the cutting edge shape of a tool affects the ground surface resulting from transcription of cutting edge. This paper describes optimization techniques for the cutting edge truncation of diamond electroplated tools which are used in ultrasonically assisted grinding. Experiments were carried out to confirm truncation effects on the ground surface and grinding force. It was confirmed that roughness was proportional to inverse of thrust force. Minimum roughness in grinding conditions were estimated from the proportional diagrams. The minimum roughness shows limit of roughness on an each grinding condition.

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Fabrication of Foam-Type Porous Silicon Carbide without Cracks and Hollow Struts

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.369.48 ◽

2016 ◽

Vol 369 ◽

pp. 48-52

Author(s):

Jeong Won Bang ◽

Soo Ryong Kim ◽

Young Hee Kim ◽

Dong Geun Shin ◽

Yoon Joo Lee ◽

...

Keyword(s):

Silicon Carbide ◽

Porous Silicon ◽

Silicon Oxycarbide ◽

X Ray Diffraction ◽

Porous Silicon Carbide ◽

Air Atmosphere ◽

Sic Ceramics ◽

Sic Ceramic ◽

Curing Condition ◽

Porous Sic

Foam-type porous silicon carbide (SiC) ceramics without cracks and hollow struts were fabricated using the polymer replica method with polycarbosilane (PCS) and polyurethane (PU) foam as the starting materials. The synthesized porous SiC was analyzed using X-ray diffraction and scanning electron microscopy. The results revealed that a porous SiC ceramic structure was formed with a dense framework at a low temperature of 1200°C. During the heat-treatment process, the PCS experienced an organic–inorganic transformation and then converted to the SiC ceramics. It was determined that the organic–inorganic transformation of PCS, which was the stage of silicon oxycarbide formation, is affected by the curing condition. In this study, the optimum curing condition was determined to be an air atmosphere at 200°C for 7 h.

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Thermal Conductivity and Microstructure Properties of Porous SiC Ceramic Derived from Silicon Carbide Powder

New Journal of Glass and Ceramics ◽

10.4236/njgc.2013.31007 ◽

2013 ◽

Vol 03 (01) ◽

pp. 43-47 ◽

Cited By ~ 15

Author(s):

Xiuwen Wu ◽

Hongwen Ma ◽

Xiaochao Chen ◽

Zhanbing Li ◽

Jie Li

Keyword(s):

Thermal Conductivity ◽

Silicon Carbide ◽

Carbide Powder ◽

Sic Ceramic ◽

Porous Sic ◽

Silicon Carbide Powder

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Morphology and chemical composition of titanium alloy surface after grinding with silicon carbide disk

Science intensive technologies in mechanical engineering ◽

10.30987/2223-4608-2019-2019-12-22-28 ◽

2019 ◽

Vol 2019 (12) ◽

pp. 22-28 ◽

Cited By ~ 1

Author(s):

Vladimir Nosenko ◽

Alexander Fetisov ◽

Nikita Serdyukov

Keyword(s):

Silicon Carbide ◽

Titanium Alloy ◽

Chemical Composition ◽

Surface Morphology ◽

Ground Surface ◽

Silicon Concentration ◽

Alloy Surface ◽

Initial Composition

The investigation results of the ground surface morphology of titanium alloy TT9 are presented. There are shown electronic photos of metal pickups and silicon carbide crystals. The dimensions of these objects are defined. As a result of abrasive displacement a silicon concentration in nano-layers of the surface worked increases twice as compared with the initial composition in the alloy.

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Decreasing Resistivity of Silicon Carbide Ceramics by Incorporation of Graphene

Materials ◽

10.3390/ma13163586 ◽

2020 ◽

Vol 13 (16) ◽

pp. 3586

Author(s):

Ningning Cai ◽

Daidong Guo ◽

Guoping Wu ◽

Fangmin Xie ◽

Shouhong Tan ◽

...

Keyword(s):

Silicon Carbide ◽

Bulk Density ◽

Friction Pair ◽

Electrochemical Corrosion ◽

Volume Resistivity ◽

High Resistivity ◽

Mechanical Seal ◽

Low Resistivity ◽

Sic Ceramic ◽

Silicon Carbide Ceramics

Silicon carbide (SiC) ceramic is an ideal material for mechanical seal because of its super hardness, high strength, low friction coefficient, good thermal conductivity, and resistance to friction and wear. However, due to relatively high resistivity of SiC ceramic, the triboelectric charge caused by rubbing of mechanical seal end-faces could not be released. It is terrible that the accumulation of triboelectric charge could cause electrochemical corrosion, which would accelerate wear. To decrease the resistivity of SiC ceramic is a desire for improving the performance of mechanical seal. In this research, decreasing resistivity of pressureless sintered SiC ceramic was investigated by conductive pathways through semiconductive grains in a body by incorporation of graphene, which has an extremely low resistivity. With the increasing of graphene from 0 to 2 wt.%, the volume resistivity of SiC ceramics sintered with graphene decreased logarithmically from >106 to around 200 Ω·cm, and the bulk density decreased gradually, from 3.132 to 3.039 g/cm3. In order to meet the requirements of mechanical seal, SiC ceramic sintered with 1 wt.% of graphene, for which the volume resistivity is of 397 Ω·cm, the bulk density is of 3.076 g/cm3, and the flexural strength is of 364 MPa, was optimized when all properties were taken into consideration. It is possible to fabricate low-resistivity SiC ceramic as a useful friction pair material for mechanical seal in a special condition, without excessive loss of their excellent mechanical properties by the introduction of partially connected graphene as conductive pathway into semiconducting ceramic.

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