In this work, the effects of the diameter and morphology on the electronic band structure of
hydrogenated cubic silicon carbide (b-SiC) nanowires is studied by using a semiempirical sp3s*
tight-binding (TB) approach applied to the supercell model, where the Si- and C-dangling bonds on
the surface are passivated by hydrogen atoms. Moreover, TB results (for the bulk) are compared with
density functional calculations in the local density approximation. The results show that though
surface morphology modifies the band gap, the change is more systematic with the thickness
variation. As expected, hydrogen saturation induces a broadening of the band gap energy because of
the quantum confinement effect.