AbstractWhile fluorinated silicate glass (FSG) has been proposed for low k inter-metal dielectric (IMD) applications in a multi-level interconnect system either as the only IMD material, or as one of the materials for a multi-layer IMD system, thermal stability of the FSG film and its impact on device reliability remain a concern for this application. In this study, SIMS, SEM, and optical microscope analyses were carried out to evaluate the thermal stability of the FSG films and the possible reactions between FSG and metals. It was observed that at elevated temperatures fluorine tends to diffuse into an undoped oxide film rather than be desorbed. The data indicate that F diffuses 3.5 times faster in a silicon oxide film than in a silicon nitride film. Sub-half micron devices were processed with FSG as IMD layers. The devices were tested using an intensive thermal stability test methodology. A TiSi2 reaction with F which diffused from the FSG film was observed under optical microscopy. This reaction caused TiSi2 delamination. Electrical characterization of devices was performed before and after the thermal stability test. Although the device performance did not change greatly, the reaction certainly affects the long term device reliability (vide infra). Barrier materials were investigated to solve the F diffusion problem. With the proper diffusion barrier, the problem of the fluorine reaction with TiSi2 and subsequent metal blistering was eliminated.
Thermal stability and diffusion characteristics of ultrathin amorphous carbon films grown on crystalline and nitrogenated silicon substrates by filtered cathodic vacuum arc deposition
