Brush assisted layer-by-layer assembled lignin/polyelectrolyte membrane

In this study, FO membrane was fabricated by Layer-by-Layer (LbL) coating technique using Poly (sodium 4-styrene-sulfonate)(PSS) and Poly (diallyl-dimethylammoniumchloride) (PDADMAC) as the active polyelectrolytes. Different concentrations of polyelectrolytes and deposition time of polyelectrolytes were investigated. The success of the coated layer was confirmed using ATR-FTIR and FESEM images. The membrane performance was determined by water flux and reverse solute diffusion (RSD) using pure water and 1.75M Na2SO4 as feed and draw solution, respectively. It was observed that the highest water flux, 6.76 L/ was recorded at the lowest polyelectrolytes concentration and longer deposition time. Meanwhile, the minimum RSD was achieved by the membrane fabricated at the longest deposition time and highest polyelectrolyte concentration.

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Layer-by-layer (LbL) polyelectrolyte membrane with Nexar™ polymer as a polyanion for pervaporation dehydration of ethanol

Separation and Purification Technology ◽

10.1016/j.seppur.2014.11.008 ◽

2015 ◽

Vol 140 ◽

pp. 13-22 ◽

Cited By ~ 32

Author(s):

Gui Min Shi ◽

Jian Zuo ◽

Shyuan Hong Tang ◽

Shawn Wei ◽

Tai Shung Chung

Keyword(s):

Layer By Layer ◽

Polyelectrolyte Membrane

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Efficacy of CNT-bound polyelectrolyte membrane by spray-assisted layer-by-layer (LbL) technique on water purification

RSC Advances ◽

10.1039/c4ra05272b ◽

2014 ◽

Vol 4 (62) ◽

pp. 32858-32865 ◽

Cited By ~ 19

Author(s):

Lei Liu ◽

Moon Son ◽

Hosik Park ◽

Evrim Celik ◽

Chiranjib Bhattacharjee ◽

...

Keyword(s):

Water Purification ◽

Layer By Layer ◽

Ultrafiltration Membranes ◽

Layer Technique ◽

Polyelectrolyte Membrane ◽

Surface Modified ◽

Layer By Layer Technique

This study demonstrates anti-fouling properties of surface-modified polyethersulfone composite ultrafiltration membranes prepared by a spray-assisted layer-by-layer technique.

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Preparation and Characterization of AgNPs In Situ Synthesis on Polyelectrolyte Membrane Coated Sericin/Agar Film for Antimicrobial Applications

Materials ◽

10.3390/ma11071205 ◽

2018 ◽

Vol 11 (7) ◽

pp. 1205 ◽

Cited By ~ 9

Author(s):

Liying Liu ◽

Rui Cai ◽

Yejing Wang ◽

Gang Tao ◽

Lisha Ai ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Mechanical Performance ◽

Synthesis Method ◽

Inhibition Zone ◽

Layer By Layer ◽

Water Contact ◽

X Ray ◽

Agar Film ◽

Biomaterial Application ◽

Polyelectrolyte Membrane

Antibacterial materials are of great importance in preventing bacterial adhesion and reproduction in daily life. Silver nanoparticle (AgNP) is a broad-spectrum antibacterial nanomaterial that has attracted significant attentions for its ability to endow natural materials with antibacterial ability. Silk sericin (SS) has a great advantage for biomaterial application, as it is a natural protein with excellent hydrophilicity and biodegradability. In this study, we prepared AgNPs and polyelectrolyte membrane (PEM) modified SS/Agar films through the layer-by-layer adsorption technique and ultraviolet-assisted AgNPs synthesis method. The film was well characterized by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy. Other properties such as water contact angle, wettability and tensile strength, the release of silver were also studied. The antimicrobial activity of AgNPs-PEM-SS/Agar film was investigated against Escherichia coli and Staphylococcus aureus as the model microorganisms by the inhibition zone and bacterial growth curve assays. The results suggested that the AgNPs-PEM-SS/Agar film had excellent mechanical performance, high hydrophilicity, prominent water absorption ability, as well as outstanding and durable antibacterial activity. Therefore, the prepared novel AgNPs-PEM-SS/Agar composite film is proposed as a potentially favorable antibacterial biomaterial for biomedical applications.

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Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088129 ◽

1991 ◽

Vol 49 ◽

pp. 762-763

Author(s):

M.A. Parker ◽

K.E. Johnson ◽

C. Hwang ◽

A. Bermea

Keyword(s):

Magnetic Recording ◽

Electron Probe ◽

Microstructural Characterization ◽

Crystallographic Structure ◽

Recording Media ◽

Layer By Layer ◽

Cross Sectional ◽

New Techniques ◽

Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

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Epitaxial growth manner and structure of superconducting oxide films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173145 ◽

1990 ◽

Vol 48 (4) ◽

pp. 2-3

Author(s):

Yoshichika Bando ◽

Takahito Terashima ◽

Kenji Iijima ◽

Kazunuki Yamamoto ◽

Kazuto Hirata ◽

...

Keyword(s):

Ultrathin Films ◽

Film Surface ◽

High Energy ◽

Epitaxial Films ◽

Layer By Layer ◽

Initial Growth ◽

In Situ Growth ◽

High Quality ◽

Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

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Compact back-scattered electrons' energy analyzer for standard SEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170177 ◽

1994 ◽

Vol 52 ◽

pp. 488-489

Author(s):

S. Likharev ◽

A. Kramarenko ◽

V. Vybornov

Keyword(s):

Depth Resolution ◽

High Energy ◽

Primary Beam ◽

Layer By Layer ◽

Energy Analyzer ◽

High Energy Part ◽

Small Window ◽

Energy Part ◽

Wide Range ◽

High Voltage Supply

At present time the interest is growing considerably for theoretical and experimental analysis of back-scattered electrons (BSE) energy spectra. It was discovered that a special angle and energy nitration of BSE flow could be used for increasing a spatial resolution of BSE mode, sample topography investigations and for layer-by layer visualizing of a depth structure. In the last case it was shown theoretically that in order to obtain suitable depth resolution it is necessary to select a part of BSE flow with the directions of velocities close to inverse to the primary beam and energies within a small window in the high-energy part of the whole spectrum.A wide range of such devices has been developed earlier, but all of them have considerable demerit: they can hardly be used with a standard SEM due to the necessity of sufficient SEM modifications like installation of large accessories in or out SEM chamber, mounting of specialized detector systems, input wires for high voltage supply, screening a primary beam from additional electromagnetic field, etc. In this report we present a new scheme of a compact BSE energy analyzer that is free of imperfections mentioned above.

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Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176563 ◽

1990 ◽

Vol 48 (4) ◽

pp. 686-687

Author(s):

L. Hultman ◽

C.-H. Choi ◽

R. Kaspi ◽

R. Ai ◽

S.A. Barnett

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Irradiation ◽

High Energy ◽

Nucleation Mechanism ◽

Layer By Layer ◽

Extended Defect ◽

Island Formation ◽

Si Substrates ◽

Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

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