An investigation of CdSe thin film for photovoltaic properties under different annealing temperature

2021 ◽  
Author(s):  
Ronen P. Dutta ◽  
Nimisha Neog
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Photovoltaic Properties ◽  
Cdse Thin Film

scholarly journals Investigation the effect of annealing temperature on the optical properties of CdSe thin films

2018 ◽  
Vol 6 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Sabah M. Ahmed ◽  
Raghad Y. Mohammed ◽  
Sedki O. Yousif
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Transmittance Spectrum ◽  
Stable Phase ◽  
Cdse Thin Film ◽  
Deposited Films

Introduction: CdSe is an important II–VI semiconducting material due to its typical optical properties such as small direct band gap (1.7 eV) and a high refractive index and, thus, a major concern is focused on the investigation of optical properties of CdSe thin films which is important to promote the performances of the devices of solid -state such as SC (solar cells), thin film transistors, LED (light-emitting diodes), EBPL (electron–beam pumped lasers) and electroluminescent devices. In the present work, CdSe thin films were deposited by thermal evaporation method and the results have been analysed and presented. Materials and Methods: CdSe thin films has been deposited on glass microscopic slides as substrates of (75×25×1 mm) under room temperature using PVD technique. CdSe blended powders gets evaporated and condensed on the substrate. The film thickness (t = 100 ± 5 nm) which is measured using Michelson interferometry method. Transmission spectrum, from 200-1100 nm, are scanned using two beams UV–VIS Spectrophotometer (6850 UV/Vis. Spectrophotometer-JENWAY). The deposited films then were annealed at temperature range of (1500C to 3500C) under vacuum to have a stable phase of the material and prevent surface oxidization. Results and Discussion: A transmittance spectrum of CdSe thin film is scanned over wavelength range 200 to 1100 nm using a (6850 UV/Vis. Spectrophotometer-JENWAY) at room temperature. The transmittance percentage between the as-deposited film and the annealed films change varies from (17.0%) to (47.0%). It is clearly seen that there is a shift toward higher energy (Blue Shift) in the transmittance spectrum. As annealing temperature increased the transmittance edge is shifted to the longer wavelength (i.e., after annealing the CdSe films shows red shifts in their optical spectra). The band gap was found within the range 1.966-1.7536 eV for CdSe thin film. As annealing temperature increases, the Eg continuously decreases. Conclusions: CdSe thin films have been deposited using Physical Vapor Deposition (PVD) Technique. It is found that the transmission for as- deposited films is (17%) and increases to (47%) as annealing temperature increases. Beside this the energy gap for as- deposited CdSe film is (1.966eV) and decreased from (1.909 eV) to (1.7536eV) as the annealing temperature increases. There is a strong red shift in the optical spectrum of the annealed CdSe films. There is a gradual shift of the annealed films thin film spectra as compared of bulk CdSe films.

scholarly journals The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 73
Author(s):  
Hasrul Nisham Rosly ◽  
Kazi Sajedur Rahman ◽  
Siti Fazlili Abdullah ◽  
Muhammad Najib Harif ◽  
Camellia Doroody ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Deposition Temperature ◽  
Hall Effect Measurement ◽  
Hexagonal Structure ◽  
Window Layer ◽  
Photovoltaic Properties ◽  
Cdse Thin Film ◽  
Average Grain Size

Cadmium selenide (CdSe) thin films were grown on borosilicate glass substrates using the RF magnetron sputtering method. In this study, CdSe thin film was deposited at a deposition temperature in the range of 25 °C to 400 °C. The influence of deposition or growth temperature on the structural, morphological, and opto-electrical properties of CdSe films was investigated elaborately to achieve a good-quality window layer for solar-cell applications. The crystal structure, surface morphology, and opto-electrical characteristics of sputtered CdSe films were determined using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV–Vis spectrophotometry, and Hall effect measurement, respectively. The XRD results revealed the polycrystalline nature of CdSe, with a hexagonal structure having a strong preferential orientation toward the (002) plane. As evident from the FESEM images, the average grain size and surface morphology of the films were dependent on deposition temperatures. The carrier concentration was obtained as 1014 cm−3. The band gap in the range of 1.65–1.79 eV was found. The explored results suggested that sputtered CdSe thin film deposited at 300 °C has the potential to be used as a window layer in solar cells.

Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering

2020 ◽  
Vol 148 ◽  
pp. 106716
Author(s):  
Hasrul Nisham Rosly ◽  
Kazi Sajedur Rahman ◽  
Muhammad Najib Harif ◽  
Camellia Doroody ◽  
Mustapha Isah ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Cdse Thin Film

Preparation of La-doped BiFeO3 Thin Film and Its Photovoltaic Properties

2013 ◽  
Vol 28 (4) ◽  
pp. 436-440 ◽  
Author(s):  
Yi-Jun XIE ◽  
Yi-Ping GUO ◽  
Wen DONG ◽  
Bing GUO ◽  
Hua LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Bifeo3 Thin Film ◽  
Photovoltaic Properties ◽  
La Doped

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

scholarly journals Dye-Sensitized Nanocrystalline ZnO Solar Cells Based on Ruthenium(II) Phendione Complexes

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Hashem Shahroosvand ◽  
Parisa Abbasi ◽  
Mohsen Ameri ◽  
Mohammad Reza Riahi Dehkordi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Zno Thin Film ◽  
Photovoltaic Properties ◽  
Dye Sensitized ◽  
Ft Ir

The metal complexes ( (phen)2(phendione))(PF6)2(1), [ (phen)(bpy)(phendione))(PF6)2(2), and ( (bpy)2(phendione))(PF6)2(3) (phen = 1,10-phenanthroline, bpy = 2,2′-bipyridine and phendione = 1,10-phenanthroline-5,6-dione) have been synthesized as photo sensitizers for ZnO semiconductor in solar cells. FT-IR and absorption spectra showed the favorable interfacial binding between the dye-molecules and ZnO surface. The surface analysis and size of adsorbed dye on nanostructure ZnO were further examined with AFM and SEM. The AFM images clearly show both, the outgrowth of the complexes which are adsorbed on ZnO thin film and the depression of ZnO thin film. We have studied photovoltaic properties of dye-sensitized nanocrystalline semiconductor solar cells based on Ru phendione complexes, which gave power conversion efficiency of (η) of 1.54% under the standard AM 1.5 irradiation (100 mW cm−2) with a short-circuit photocurrent density () of 3.42 mA cm−2, an open-circuit photovoltage () of 0.622 V, and a fill factor (ff) of 0.72. Monochromatic incident photon to current conversion efficiency was 38% at 485 nm.

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