Oxide–nitride–oxide layer optimisation for reliable embedded SONOS memories

2004 ◽  
Vol 72 (1-4) ◽  
pp. 395-398 ◽  
Author(s):  
Rob van Schaijk ◽  
Michiel van Duuren ◽  
Wan Yuet Mei ◽  
Kees van der Jeugd ◽  
Aude Rothschild ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Nitride Oxide

Impacts of Buffer Oxide Layer in Nitride/Oxide Stack Gate Dielectrics on the Device Performance and Dielectric Reliability

2002 ◽  
Vol 5 (4) ◽  
pp. F7
Author(s):  
W. H. Lin ◽  
K. L. Pey ◽  
Z. Dong ◽  
Victor S. K. Lim ◽  
Simon Y. M. Chooi ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Gate Dielectrics ◽  
Device Performance ◽  
Nitride Oxide

Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO2 and Si3N4 Buffer Layer for System on Panels Application

2013 ◽  
Vol 658 ◽  
pp. 120-123
Author(s):  
Sang Youl Lee ◽  
Jae Sub Oh ◽  
Seung Dong Yang ◽  
Ho Jin Yun ◽  
Kwang Seok Jeong ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Buffer Layer ◽  
Flash Memory ◽  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Memory Device ◽  
Nitride Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitride Oxide

For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.

scholarly journals NITRO-OXIDATION PRODUCTS FROM STRUCTURAL STEELS

2021 ◽  
Vol 9 (01) ◽  
pp. 1105-1113
Author(s):  
Kholikul Karshievich Eshkabilov ◽  
◽  
Sherzod Alimardonovich Berdiev ◽  
Asila Olimovna Abdullaeva ◽  
◽  
...  
Keyword(s):  
Phase Composition ◽  
Water Vapor ◽  
Oxide Layer ◽  
Diffusion Coating ◽  
Surface Characteristics ◽  
Structural Steels ◽  
Oxidation Products ◽  
Second Stage ◽  
Coating Composition ◽  
Nitride Oxide

The article examines the technology of nitro-oxidation, which consists of nitriding in separated ammonia at the first organize and oxidation in water vapor at the second stage of the process, studied the structure and phase composition of the diffusion nitride-oxide layer, providing high physico-mechanical and physicochemical surface characteristics, competitively capable of galvanic strategies of getting a coating, the conceivable outcomes of regulating the structure and phase composition of the nitride-oxide layer are being investigated to obtain a diffusion coating composition with predetermined properties.

scholarly journals Structure and properties of the modified diffusion nitride-oxide surface layer

2021 ◽  
Vol 264 ◽  
pp. 05054
Author(s):  
Kholikul Eshkabilov ◽  
Sherzod Berdiyev
Keyword(s):  
Surface Layer ◽  
Water Vapor ◽  
Oxide Layer ◽  
Nitride Layer ◽  
Phase Changes ◽  
Oxide Surface ◽  
Gas Nitriding ◽  
Modified Surface ◽  
Nitride Oxide ◽  
Nitride Zone

To combine the processes of gas nitriding and oxidation in water vapor, the effects of the atmospheric nitrogen potential in dissociated ammonia on the formation of surface diffusion nitride phases are studied. Modification of the surface nitride layer with oxygen was carried out by oxidation of the nitride zone at the second stage of obtaining an oxycarbonitride layer. The corrosion and wear-resistant properties of the nitride-oxide layer t of the lowest nitride layer are investigated, depending on the phase changes in the nitride layer after oxidation. The distributions of the elements in the nitride-oxide layer are determined, and the nature of the formation of the modified surface layer under the combination of gas nitriding with subsequent oxidation in water vapor is established.

Compositional Determinations of Oxide-Nitride-Oxide Stacked Dielectric

1992 ◽  
Vol 268 ◽  
Author(s):  
G.L. Waytena ◽  
J. Hren ◽  
J.K. Weiss ◽  
P. Rez ◽  
G.G. Fountain ◽  
...  
Keyword(s):  
Energy Loss ◽  
Oxide Layer ◽  
Spatial Resolution ◽  
Silicon Oxide ◽  
Nitrogen Concentration ◽  
Light Element ◽  
Nitride Layer ◽  
Electron Holography ◽  
Computer Controlled ◽  
Nitride Oxide

ABSTRACTElectron holography, and high spatial resolution (17Å) computer controlled Parallel Electron Energy Loss Spectrometry (PEELS) were used to probe the structure of and chemical profile across a thin silicon Oxide-Nitride-Oxide (ONO) layered structure of nominal width 10Å-50Å-10Å. We found that the layer widths are on the average 13Å-28Å-18Å, the first oxide layer was discontinuous, and the second oxide layer contained nitrogen. The nitride layer had a silicon to nitrogen concentration ratio of 1.0 ± 0.1. These results show, for the first time, the power of holography in characterizing thin, light element, amorphous layers and the importance of computer controlled parallel energy loss line scans for obtaining analytical information at the highest spatial resolution with minimum dose.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

ffect of Na2WO4 in electrolyte on mechanical properties of oxide layer on Al alloy via plasma electrolytic oxidation

2015 ◽  
Vol 53 (8) ◽  
pp. 535-540 ◽  
Author(s):  
Young Gun Ko ◽  
Dong Hyuk Shin ◽  
Hae Woong Yang ◽  
Yeon Sung Kim ◽  
Joo Hyun Park ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Oxide Layer ◽  
Plasma Electrolytic Oxidation ◽  
Al Alloy ◽  
Electrolytic Oxidation ◽  
Plasma Electrolytic

Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Pereira ◽  
A. Goullet ◽  
R. Silva ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Spectroscopic Ellipsometry ◽  
Chemical Deposition ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Signal To Noise ◽  
Rectification Factor ◽  
Mis Devices ◽  
The Ideal

AbstractIn this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106)and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.

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