High quality of N-polar GaN film fabricated by layer transfer technology using high selective material removal rate of CMP

The surfaces of the microlenses at the conical end-faces of optical fibers require high quality to keep the best performance of laser beam delivery. The polishing parameters play an important role to get the best quality of the microlenses. Most of the past researches study on the polishing parameters of flat surfaces. In this study, the polishing area of the conical end-face of the optical fiber is varied during fabrication. The relation between removed volume and removed thickness is built to determine the material removal rate. An experiment is carried out and the results show that the first two spinning turns are much effective for polishing under the parameters of the experiment.

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Comparison of Processing Features between Semi Bonded Abrasive Lapping and Loose Abrasive Lapping

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.416.439 ◽

2009 ◽

Vol 416 ◽

pp. 439-442

Author(s):

Xun Lv ◽

Ju Long Yuan ◽

Dong Hui Wen

Keyword(s):

Surface Roughness ◽

Material Removal Rate ◽

Material Removal ◽

Removal Rate ◽

Processing Parameters ◽

Good Surface ◽

Ultra Precision ◽

New Processing ◽

Short Time

Semi bonded abrasive lapping is an effective ultra-precision lapping method. It can obtain good surface quality of workpiece in short time. This paper focused on the differences of processing features by comparing semi bonded abrasive lapping and loose abrasive lapping in several groups processing parameters. The results showed that the surface roughness of workpiece in semi bonded abrasive lapping was far superior to that of loose abrasive lapping in same processing parameters. And the MRR (material removal rate) of semi bonded abrasive lapping was slightly lower than that of loose abrasive lapping. For these features of semi bonded abrasive, a new processing flow would also be proposed in this paper.

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Material Removal Rate of Double-faced Mechanical Polishing of 4H-SiC Substrate

10.21203/rs.3.rs-431712/v1 ◽

2021 ◽

Author(s):

Peng Zhang ◽

Jingfang Yang ◽

Huadong Qiu

Keyword(s):

Material Removal Rate ◽

Material Removal ◽

Removal Rate ◽

Mechanical Polishing ◽

Ring Gear ◽

The Third ◽

Regression Test ◽

Polishing Pads ◽

The Relationship

Abstract Silicon carbide (SiC) has been a promising the-third-generation semiconductor power device material for high-power, high-temperature, substrate applications. It aims to improve the material removal rate (MRR), on the premise of ensuring the surface roughness requirements of the double-faced mechanical polishing of 6-inch SiC substrate. To obtain the relationship between any point on SiC substrate and polishing pads, the model about double-faced mechanical polishing has been built and the kinematics equations were created. Best optimized material removal rate parameters were obtained. MRR reached the maximum when speed rate of the outside ring gear to the inside sun gear m=-1, speed rate of lower plate to the inside sun gear n=5, SiC substrate distribution radius RB=75. The primary and secondary order of MRR (n>m>RB) was obtained. An accurate mathematical model of orthogonal rotary regression test of Tri-factor quadratic of MRR was established and the regression model was significant. Surface quality of SiC substrate was observed and characterized with SEM and AFM. It greatly provides a key guarantee for the next process of CMP, confirmed the importance of MRR to ultra-smooth polishing, and provides a guarantee for its application in semiconductor equipment and technology.

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Development of a Combined Diamond Impregnated Lapping Plate

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.739.157 ◽

2017 ◽

Vol 739 ◽

pp. 157-163

Author(s):

Guan Fu Lin ◽

Ming Yi Tsai ◽

Chiu Yuan Chen

Keyword(s):

Surface Roughness ◽

Material Removal Rate ◽

Material Removal ◽

Removal Rate ◽

Single Crystal Silicon ◽

High Quality ◽

Crystal Silicon ◽

Temperature Heating ◽

Oxidized Diamond ◽

High Temperature Heating

This paper presents a combined diamond-impregnated lapping plate for single crystal silicon carbide (SiC) to improve the material removal rate due to SiC having very low material removal rate. Three different dimaond shapes were prepared: (1) "sharp," a sharp-edged diamod; (2) "blocky," a high quality crystalline diamond; (3) "oxidized diamond". The diamonds were manufactured by using high temperature heating method in a furnace to induce diamond oxidation resulting in improvement of Ra and sharpness of the diamonds. Three combined diamond-impregnated lapping plates were fabricated using the above mentioned diamond shapes with diamond size of 6μm. The surface roughness and removal rate of the SiC lapping with these plate were investigated. Experimental results showed that the average material removal rate (MRR) of oxidized diamond is higher than that of the other diamond shapes. The MRR of oxidized diamond for C-face and Si-face SiC are 4.72μm/hr and 6.26μm/hr, respectively. It is found that the surface roughness (Ra) of oxidized diamond for C-face and Si-face are 7.547nm and 8.06nm, respectively. This indicates that the combined diamond-impregnated lapping plate can be effectively used for SiC machining.

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Study on 6H-SiC Crystal Substrate (0001) C Surface in FA-CMP Based on Diamond Particle

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.727-728.244 ◽

2015 ◽

Vol 727-728 ◽

pp. 244-247

Author(s):

Zhu Qing Zhang ◽

Kang Lin Xing

Keyword(s):

Material Removal Rate ◽

Chemical Mechanical Polishing ◽

Material Removal ◽

Removal Rate ◽

Diamond Particle ◽

Mechanical Polishing ◽

Crystal Substrate ◽

Fixed Abrasive ◽

Free Abrasive

Through experimental study on the role of the free abrasive in chemical mechanical polishing, in this paper, four different types of abrasive which were chosen were used for the research of material removal rate(MRR) and surface quality of SiC single crystal . Finally ,Diamond abrasive which is considered was the most suitable for chemical mechanical polishing(CMP) abrasive of SiC Crystal Substrate. With diamond Particle polish pad polishing, it is draw a comparison result on the influence of the free abrasive and consolidation abrasive for the material removal rate and surface quality of 6H-SiC. The results showed that: the MRR is 140nm / min, the material removal rate if fixed abrasive chemical mechanical polishing(FA-CMP) more than three times that of traditional CMP, fixed abrasive chemical mechanical polishing pad, are involved in a large proportion of micro abrasive cutting, can greatly improve the material removal efficiency. And results from the test procedure, the FA-CMP surface has scratches after more technical problems for the polishing pad, the surface damage is relatively free of abrasive chemical mechanical polishing is more serious.

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A Study of the Solid-State Reaction for Polishing Sapphires

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.497.195 ◽

2012 ◽

Vol 497 ◽

pp. 195-199 ◽

Cited By ~ 2

Author(s):

Qian Fa Deng ◽

Zhi Xiong Zhou ◽

Zhao Zhong Zhou ◽

Ju Long Yuan ◽

Ji Cui Wang

Keyword(s):

Solid State ◽

Surface Quality ◽

Material Removal Rate ◽

Surface Finish ◽

Solid State Reaction ◽

Material Removal ◽

Removal Rate ◽

Substrate Material ◽

Quality Requirements

As sapphire is an important substrate material, stringent surface quality requirements (i.e., surface finish and flatness) are required. In order to acquire the higher material removal rate and the better surface quality of sapphire, the solid state-reaction were introduced in this paper; abrasive of SiO2 and SiO2 with mixing the MgF2 power were compared to polish sapphire. The result showed that abrasive of SiO2 with mixing the MgF2 can obtain higher material removal rate and better surface quality. The result of the pr

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Optimal design and experimental study of fixed abrasive pads based on coupling of damping regulation and pellet arrangement

Mechanical Sciences ◽

10.5194/ms-12-97-2021 ◽

2021 ◽

Vol 12 (1) ◽

pp. 97-108

Author(s):

Chaoqun Xu ◽

Congfu Fang ◽

Yuan Li ◽

Chong Liu

Keyword(s):

Surface Roughness ◽

Pressure Distribution ◽

Material Removal Rate ◽

Material Removal ◽

Removal Rate ◽

Wafer Surface ◽

Test Results ◽

Workpiece Material ◽

Fixed Abrasive

Abstract. Lapping and polishing technology is an efficient processing method for wafer planarization processing. The structure of the fixed abrasive pad (FAP) is one of the most concerning issues in the research. The FAP structure affects the pressure distribution on the wafer surface, and the pressure distribution during processing has a significant influence on the wafer surface. Therefore, in this paper, a better pressure distribution is obtained by adjusting the angle of the spiral arrangement and the damping distribution of the damping layer of the FAP, thereby obtaining better processing quality. Based on the above theory, a new type of FAP, with coupling between the arrangement of the pellets and the damping regulation of the damping layer, was designed and optimized. The machining effects of different FAPs on the workpiece surface are compared in terms of material removal rate, material removal thickness, and surface roughness. The test results show that the workpiece material removal rate is higher than that of the traditional FAP when using the optimized FAP. The non-uniformity of the optimized FAP for that of material removal was 4.034 µm, which was lower than the traditional FAPs by 24.4 % and 17.6 %, respectively. The average surface roughness, Ra, of the optimized FAP is 0.21 µm, which is lower than 19.1 % and 12.5 % of the two traditional FAPs, respectively. Therefore, workpiece material removal and distribution are more uniform, and the surface quality of the workpiece is better when the optimized FAP processing is used. The test results prove that the optimized pellet arrangement and damping can achieve a better surface quality of the workpiece, which can meet the precision lapping process requirements for high-quality surfaces and large-scale production of brittle and hard materials such as sapphire.

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Impact of slurry pH on material removal rate and surface quality of polished fused silica

Optifab 2017 ◽

10.1117/12.2279798 ◽

2017 ◽

Author(s):

Cedric Maunier ◽

Melanie Redien ◽

Bertrand Remy ◽

Jérôme Néauport ◽

Karine Poliakoff-Leriche

Keyword(s):

Surface Quality ◽

Material Removal Rate ◽

Material Removal ◽

Removal Rate ◽

Fused Silica

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Fabrication of Nanoabrasive Grinding Wheels and Their Application to Grinding Silicon Wafers

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.317-318.373 ◽

2006 ◽

Vol 317-318 ◽

pp. 373-376

Author(s):

T.W. Kim ◽

Sang Hoon Hyun ◽

Joo Sun Kim ◽

Jong Ho Lee ◽

Hae Won Lee

Keyword(s):

Material Removal Rate ◽

Material Removal ◽

Critical Size ◽

Removal Rate ◽

Silicon Wafers ◽

Depth Of Cut ◽

Grinding Wheels ◽

Surface Machining ◽

Abrasive Grains

In the surface machining of brittle materials, there exists a transition from brittle to ductile modes when the depth of cut is reduced below a critical size using ultrafine abrasive grains. Vitrified grinding wheels containing ultrafine abrasives in the sub-micrometer to nanometer range were fabricated by mechanochemically milling nanoabrasive particles and subsequent viscous sintering of abrasive-binder composites. The grinding characteristics of the nanoabrasive grinding wheels were evaluated for the fine grinding of silicon wafers in terms of a variety of variables. Preliminary wafer grinding results are presented on material removal rate and surface quality of silicon wafers.

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Analytical Study on Mechanism of Electrolysis and Plasma Polishing

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.472-475.350 ◽

2012 ◽

Vol 472-475 ◽

pp. 350-353 ◽

Cited By ~ 9

Author(s):

Ji Wang ◽

Lai Chun Suo ◽

Li Li Guan ◽

Yi Li Fu

Keyword(s):

Material Removal Rate ◽

Material Removal ◽

Analytical Study ◽

Removal Rate ◽

Direct Proportion ◽

High Quality ◽

Metal Parts ◽

Green Technique ◽

Quality Surface ◽

High Quality Surface

Electrolysis and plasma polishing(EPP) is a new “green” technique that can efficiently polish metal workpieces and provide high-quality surface of the workpieces. In this paper, mechanism of EPP and why metal parts can be polished by EPP are expounded on by Streamer theory. EPP is a dynamic process consisting of oxidation and discharge. A precondition of EPP is that the removal rate of discharge is faster than oxidation. It is deduced from the mechanism and demonstrated experimentally that the material removal rate is direct proportion to the electric current density.

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