The Impact Ionization MOSFET (IMOS) as low-voltage optical detector

ABSTRACTIn this work, electro-luminescence (EL) of a AlGaN p-i-n diode have been investigated in both avalanche and injection modes. The active i-region of the diode consists of Al0.1Ga0.9N/Al0.15Ga0.85N MQWs. Strong interband luminescence from the Al0.1Ga0.9N active layers was observed when operating the device in both avalanche and injection modes. The threshold voltage for avalanche breakdown is as low as 9 V. This indicates that the impact ionization coefficient of electrons is greatly enhanced in these Al0.1Ga0.9N/Al0.15Ga0.85N MQWs comparing to AlGaN bulk materials. Polarization-induced electric fields in the Al0.1Ga0.9N well layers are believed to be responsible for the enhancement of the ionization coefficient. In a control sample that has higher defect density, the electroluminescence was dominated by long-wavelength emissions, which results from impact ionizations of the defect levels.

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Optimized Strategic Planning of Future Norwegian Low-Voltage Networks with a Genetic Algorithm Applying Empirical Electric Vehicle Charging Data

Electricity ◽

10.3390/electricity2010006 ◽

2021 ◽

Vol 2 (1) ◽

pp. 91-109

Author(s):

Julian Wruk ◽

Kevin Cibis ◽

Matthias Resch ◽

Hanne Sæle ◽

Markus Zdrallek

Keyword(s):

Genetic Algorithm ◽

Electric Vehicle ◽

Electric Vehicles ◽

Low Voltage ◽

Network Planning ◽

Voltage Regulation ◽

Electric Vehicle Charging ◽

Vehicle Charging ◽

The Impact

This article outlines methods to facilitate the assessment of the impact of electric vehicle charging on distribution networks at planning stage and applies them to a case study. As network planning is becoming a more complex task, an approach to automated network planning that yields the optimal reinforcement strategy is outlined. Different reinforcement measures are weighted against each other in terms of technical feasibility and costs by applying a genetic algorithm. Traditional reinforcements as well as novel solutions including voltage regulation are considered. To account for electric vehicle charging, a method to determine the uptake in equivalent load is presented. For this, measured data of households and statistical data of electric vehicles are combined in a stochastic analysis to determine the simultaneity factors of household load including electric vehicle charging. The developed methods are applied to an exemplary case study with Norwegian low-voltage networks. Different penetration rates of electric vehicles on a development path until 2040 are considered.

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Uncontrolled Electric Vehicle Charging Impacts on Distribution Electric Power Systems with Primarily Residential, Commercial or Industrial Loads

Energies ◽

10.3390/en14061688 ◽

2021 ◽

Vol 14 (6) ◽

pp. 1688 ◽

Cited By ~ 1

Author(s):

C. Birk Jones ◽

Matthew Lave ◽

William Vining ◽

Brooke Marshall Garcia

Keyword(s):

Power Systems ◽

Electric Power ◽

Low Voltage ◽

Peak Load ◽

Electric Power Systems ◽

Primary System ◽

Maximum Increase ◽

Actual Distribution ◽

The Impact ◽

Ev Charging

An increase in Electric Vehicles (EV) will result in higher demands on the distribution electric power systems (EPS) which may result in thermal line overloading and low voltage violations. To understand the impact, this work simulates two EV charging scenarios (home- and work-dominant) under potential 2030 EV adoption levels on 10 actual distribution feeders that support residential, commercial, and industrial loads. The simulations include actual driving patterns of existing (non-EV) vehicles taken from global positioning system (GPS) data. The GPS driving behaviors, which explain the spatial and temporal EV charging demands, provide information on each vehicles travel distance, dwell locations, and dwell durations. Then, the EPS simulations incorporate the EV charging demands to calculate the power flow across the feeder. Simulation results show that voltage impacts are modest (less than 0.01 p.u.), likely due to robust feeder designs and the models only represent the high-voltage (“primary”) system components. Line loading impacts are more noticeable, with a maximum increase of about 15%. Additionally, the feeder peak load times experience a slight shift for residential and mixed feeders (≈1 h), not at all for the industrial, and 8 h for the commercial feeder.

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Unipolar Quantum Well InGaAs/AlGaAs Heterostructures With Impact Ionization for Efficient Low-Voltage Light-Emitting Devices

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3075170 ◽

2021 ◽

pp. 1-6

Author(s):

Sergey O. Slipchenko ◽

Olga S. Soboleva ◽

Nikita A. Pikhtin

Keyword(s):

Quantum Well ◽

Impact Ionization ◽

Low Voltage ◽

Light Emitting ◽

Light Emitting Devices

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Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

Light Science & Applications ◽

10.1038/s41377-021-00553-2 ◽

2021 ◽

Vol 10 (1) ◽

Author(s):

Jun Yin ◽

Lian Liu ◽

Yashu Zang ◽

Anni Ying ◽

Wenjie Hui ◽

...

Keyword(s):

High Performance ◽

Impact Ionization ◽

Low Cost ◽

Atomic Layer ◽

Light Illumination ◽

Insulation Material ◽

Defect States ◽

Uv Illumination ◽

Layer Deposition ◽

The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

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Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.311 ◽

2009 ◽

Vol 615-617 ◽

pp. 311-314 ◽

Cited By ~ 4

Author(s):

W.S. Loh ◽

J.P.R. David ◽

B.K. Ng ◽

Stanislav I. Soloviev ◽

Peter M. Sandvik ◽

...

Keyword(s):

Phonon Scattering ◽

Impact Ionization ◽

Positive Temperature Coefficient ◽

Positive Temperature ◽

Different Temperatures ◽

Ionization Coefficients ◽

Increasing Temperature ◽

The Impact ◽

Good Agreement ◽

Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

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Measurement of the impact ionization rates in Al0.06Ga0.94Sb

Applied Physics Letters ◽

10.1063/1.103705 ◽

1990 ◽

Vol 57 (3) ◽

pp. 249-251 ◽

Cited By ~ 7

Author(s):

H. Kuwatsuka ◽

T. Mikawa ◽

S. Miura ◽

N. Yasuoka ◽

Y. Kito ◽

...

Keyword(s):

Impact Ionization ◽

The Impact ◽

Ionization Rates

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Effect of the impact ionization of deep traps on the field distribution in planar thin-film GaAs structures

Journal of Applied Physics ◽

10.1063/1.1325004 ◽

2001 ◽

Vol 89 (1) ◽

pp. 327-331

Author(s):

Eugenio F. Prokhorov ◽

Jesus González-Hernández ◽

Nikolai B. Gorev ◽

Inna F. Kodzhespirova ◽

Yury A. Kovalenko

Keyword(s):

Thin Film ◽

Field Distribution ◽

Impact Ionization ◽

Deep Traps ◽

The Impact

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Impact of Photovoltaic Plant Outputs in Distribution Networks

MATEC Web of Conferences ◽

10.1051/matecconf/201822504024 ◽

2018 ◽

Vol 225 ◽

pp. 04024 ◽

Cited By ~ 1

Author(s):

Abid Ali Jamali ◽

Nursyarizal Mohd Nor ◽

Taib Ibrahim ◽

Mohd Fakhizan Romlie ◽

Zahid Khan

Keyword(s):

Low Voltage ◽

Distribution Networks ◽

Weather Data ◽

Time Varying ◽

Solar Pv ◽

Farm Life ◽

Plant Yields ◽

Module Efficiency ◽

Photovoltaic Plant ◽

The Impact

This paper evaluates the potential of Quaid-e-Azam Solar Park (QASP), Pakistan and examines its impact on distribution networks. To estimate the PV plant yields, solar park’s historical hourly weather data from the years 2000 - 2014 is used. For handling of such huge data, the yearly data is partitioned into four seasons. Further, the seasonal data is modelled by using Beta Probability Density Function (PDF) and a 24 hour solar curve for each season is generated. The solar farm power outputs are tested in IEEE 33 bus distribution network by using time-varying seasonal hourly loads, meanwhile system losses and bus voltages are calculated. The results show that with the passage of time, the impact of solar PV power on reduction of system losses gradually decrease due to yearly degradation of PV module efficiency. System losses at end of PV farm life are 10 - 12% higher than those losses as in the first year. Furthermore, low voltage buses also pose to risk as system voltages also start to decrease. From the analysis, it is suggested that for maintaining the quality of network, time varying detailed assessments should be performed during the calculations of sizing of distributed generation.

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