scholarly journals Effect of Magnetron Discharge Power and N2 Flow Rate for Preparation of TiCrN Thin Film

2012 ◽  
Vol 32 ◽  
pp. 1135-1138 ◽  
Author(s):  
S. Samapisut ◽  
U. Tipparach ◽  
G. Heness ◽  
G. McCredie
2021 ◽  
Vol 260 ◽  
pp. 124082
Author(s):  
Ranjan Kr Ghadai ◽  
Soham Das ◽  
Kanak Kalita ◽  
Ishwer Shivakoti ◽  
Subhas Ch Mondal ◽  
...  

2011 ◽  
Vol 214 ◽  
pp. 320-324 ◽  
Author(s):  
Pattarinee Klumdoung ◽  
Piyapong Asanithi ◽  
Surasing Chaiyakun ◽  
Pichet Limsuwan

This study is to evaluate a color variation of the zirconium nitride thin film, prepared from deposition technique of different N2 flow rates, ranging from 0.0 to 3.0 sccm, whereas the Ar flow rate is fixed at 3 sccm. The thin film was deposited on an unheated silicon wafer (100) via a reactive DC magnetron sputtering. The deposition current and deposition time were 0.6 A and 15 minutes, respectively. In the study, colors of film were changed from silver, gold, dark brown, brown, purple, pink to blue, when N2 flow rate further increase. Interestingly, the results indicate that gold color occurs in a very small interval of N2 flow rate.


2015 ◽  
Vol 1734 ◽  
Author(s):  
Kento Nakanishi ◽  
Jun Otsuka ◽  
Masanori Hiratsuka ◽  
Chen Chung Du ◽  
Akira Shirakura ◽  
...  

ABSTRACTDiamond-like carbon (DLC) has widespread attention as a new material for its application to thin film solar cells and other semiconducting devices. DLC can be produced at a lower cost than amorphous silicon, which is utilized for solar cells today. However, the electrical properties of DLC are insufficient for this purpose because of many dangling bonds in DLC. To solve this problem, we investigated the effects of the fluorine incorporation on the structural and electrical properties of DLC.We prepared five kinds of fluorinated DLC (F-DLC) thin film with different amounts of fluorine. Films were deposited by the radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. C6H6 and C6HF5 were used as source gases. The total gas flow rate was constant and the gas flow rate ratio R (=C6H6 / (C6H6 + C6HF5)) was changed from 0 to 1 in 0.25 ratio steps. We also prepared nitrogen doped DLC (F-DLC) on p-Si using N2 gas as a doping gas to form nitrogen doped DLC (F-DLC) / p-Si heterojunction diodes.X-ray photoelectron spectroscopy (XPS) showed that fluorine concentration in the DLC films was controlled. Moreover, the XPS analysis of the C1s spectrum at R=2/4 showed the presence of CF bonding. At R=1, CF2 bonding was observed in addition to CF bonding. The sheet resistivity of the films changed from 3.07×1012 to 4.86×109 Ω. The minimum value was obtained at R=2/4. The current-voltage characteristics indicated that nitrogen doped F-DLC of 2/4 and p-Si heterojunction diode exhibited the best rectification characteristics and its energy conversion efficiency had been maximized. This is because of a decrease of dangling bonds density by ESR analysis and an increase of sp2 structures by Raman analysis. When the fluorine is over certain content, the sheet resistivity increases because chain structures become larger, which is due to the CF2 bonding in F-DLC prevents ring structures. Many C2F4 species were observed and it may become precursors of the chain structure domains, such as (CF2)n.In this study, we revealed effects of fluorine incorporation on DLC and succeeded in increasing its conductivity and improving rectification characteristics of DLC/ p-Si hetero-junction diodes. Our results indicate that DLC fluorination is effective for the semiconducting material, such as solar cell applications.


2016 ◽  
Vol 73 (10) ◽  
pp. 2361-2369 ◽  
Author(s):  
M. El-Sayed ◽  
M. Ramzi ◽  
R. Hosny ◽  
M. Fathy ◽  
Th. Abdel Moghny

A novel amorphous carbon thin film (ACTF) was prepared by hydrolyzing wood sawdust and delignificating the residue to obtain cellulose mass that was subjected to react with cobalt silicate nanoparticle as a catalyst under the influence of sudden concentrated sulfuric acid addition at 23 °C. The novel ACTF was obtained in the form of thin films like graphene sheets having winding surface. The prepared ACTF was characterized by Fourier-transform infrared spectrometer, transmission electron microscope (TEM), and Brunauer–Emmett–Teller (BET). The adsorption capacity of ACTF to remove oil from synthetic produced water was evaluated using the incorporation of Thomas and Yoon–Nelson models. The performance study is described through the breakthrough curves concept under relevant operating conditions such as column bed heights (3.8, 5 and 11 mm) and flow rate (0.5, 1 and 1.5 mL.min−1). It was found that the oil uptake mechanism is favoring higher bed height. Also, the highest bed capacity of 700 mg oil/g ACTF was achieved at 5 mm bed height, and 0.5 mL.min−1 flow rate. The results of breakthrough curve for oil adsorption was best described using the Yoon–Nelson model. Finally, the results illustrate that ACTF could be utilized effectively for oil removal from synthetic produced water in a fixed-bed column system.


Author(s):  
K. Singh ◽  
M. Sharabi ◽  
R. Jefferson-Loveday ◽  
S. Ambrose ◽  
C. Eastwick ◽  
...  

Abstract In the case of aero-engine, thin lubricating film servers dual purpose of lubrication and cooling. Prediction of dry patches or lubricant starved region in bearing or bearing chambers are required for safe operation of these components. In the present work thin liquid film flow is numerically investigated using the framework of the Eulerian thin film model (ETFM) for conditions which exhibit partial wetting phenomenon. This model includes a parameter that requires adjustment to account for the dynamic contact angle. Two different experimental data sets have been used for comparisons against simulations, which cover a wide range of operating conditions including varying the flow rate, inclination angle, contact angle, and liquid-gas surface tension coefficient. A new expression for the model parameter has been proposed and calibrated based on the simulated cases. This is employed to predict film thickness on a bearing chamber which is subjected to a complex multiphase flow. From this study, it is observed that the proposed approach shows good quantitative comparisons of the film thickness of flow down an inclined plate and for the representative bearing chamber. A comparison of model predictions with and without wetting and drying capabilities is also presented on the bearing chamber for shaft speed in the range of 2,500 RPM to 10,000 RPM and flow rate in the range of 0.5 liter per minute (LPM) to 2.5 LPM.


2015 ◽  
Vol 73 (1) ◽  
Author(s):  
Jia Wei Low ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Mohd Khairul Ahmad ◽  
Ali Yeon Md Shakaff ◽  
...  

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.


2011 ◽  
Vol 63 (6) ◽  
pp. 433-439 ◽  
Author(s):  
Mohammad Asaduzzaman Chowdhury ◽  
Dewan Muhammad Nuruzzaman ◽  
Khaled Khalil ◽  
Mohammad Lutfar Rahaman

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