scholarly journals The Fluid Flow Effect on the Inlet Injection of the Thin Film Deposition in a Square Type Atomic Layer Deposition Reactor

2019 ◽  
Vol 35 ◽  
pp. 223-228 ◽  
Author(s):  
Rigardt Alfred Maarten Coetzee ◽  
Hong-Liang Lu ◽  
Tien-Chien Jen
2021 ◽  
Author(s):  
Byeong Guk Ko ◽  
Chi Thang Nguyen ◽  
Bonwook Gu ◽  
Rizwan Khan ◽  
Kunwoo Park ◽  
...  

Atomic layer deposition (ALD) is a thin film deposition technique based on self-saturated reactions between a precursor and reactant vacuum conditions. A typical ALD reaction consists of the first half-reaction...


2013 ◽  
Vol 668 ◽  
pp. 767-770
Author(s):  
Tao Zhou ◽  
Hua Wei Jiang ◽  
Yue Xiao ◽  
Ying Bang Yao ◽  
Bin Shan ◽  
...  

Atomic layer deposition (ALD) is a very attractive ultra-thin film deposition technique. With the feature size of IC industry continues going down, ALD has received more and more attentions for its accurate sub-nanometer thickness control as well as superior uniformity and conformality. The further development of ALD technology emphasizes on both process and equipment innovations. A single-wafer bottom-heated reactor is constructed successfully, and the Al2O3 is deposited with ~2% uniformity across a 4-inch wafer. Furthermore, the gas delivery system and heating devices are studied by the combination of ANSYS simulation and experiments. These parameters that influence the uniformity and conformality of deposited films have been further optimized to obtain better performance. As a result, a new reactor with showerhead gas delivery and radiation heating system is designed.


2001 ◽  
Vol 714 ◽  
Author(s):  
Ana R. Londergan ◽  
Jereld L. Winkler ◽  
Kim Vu ◽  
Lawrence Matthysse ◽  
Thomas E. Seidel ◽  
...  

ABSTRACTAtomic Layer Deposition (ALD) is an emerging ultra-thin film deposition technique for advanced microelectronics applications. Enabling features of ALD are precise control over film thickness, excellent conformality and relative insensitivity to wafer size. Additionally, ALD allows interface and film engineering that can be utilized to maximize device performance within the minimum feature size requirements. This paper reports on the compositional, structural and electrical properties of engineered Ti-Ta-N composite films grown by ALD at 360°C. For a wide range of composition these Ti-Ta-N films exhibit resistivity from 500 to 2000 μω-cm, high density, and 100 % step coverage. Additionally, the ability to control texture by changing film composition is established. Based on experimental results, an approach to grow Composite Engineered Barriers by ALD (CEBA) is described that could provide a solution to the challenging barrier requirements.


2012 ◽  
Vol 185 ◽  
pp. 12-14 ◽  
Author(s):  
Mika Vähä-Nissi ◽  
Terhi Hirvikorpi ◽  
Jenni Sievänen ◽  
Katriina Matilainen ◽  
Erkki Salo ◽  
...  

Biopolymers play still a relatively minor role in the packaging material markets. For this to grow further there are problems to be solved, such as inadequate barrier properties and moisture sensitivity. Atomic layer deposition (ALD) is one potential solution. Atomic layer deposition is a layer-by-layer thin film deposition process based on self-limiting gas-solid reactions. It is well suited for producing pinhole free barrier coatings uniform in thickness at relatively mild process conditions. The purpose of this presentation is to summarize our recent work done concerning atomic layer deposition of thin aluminum oxide layers onto biopolymers.


2020 ◽  
Vol 49 (14) ◽  
pp. 4306-4314
Author(s):  
Seong Ho Han ◽  
Raphael Edem Agbenyeke ◽  
Ga Yeon Lee ◽  
Bo Keun Park ◽  
Chang Gyoun Kim ◽  
...  

Novel zinc precursors were designed, synthesized and used for the deposition of ZnO thin films by ALD.


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