Room-temperature crystallization of amorphous films by RF plasma treatment

2009 ◽  
Vol 517 (10) ◽  
pp. 3092-3095 ◽  
Author(s):  
H. Ohsaki ◽  
Y. Shibayama ◽  
N. Yoshida ◽  
T. Watanabe ◽  
S. Kanemaru
Keyword(s):  
Plasma Treatment ◽  
Room Temperature ◽  
Rf Plasma ◽  
Amorphous Films ◽  
Temperature Crystallization

Room-temperature crystallization of amorphous thin films by RF plasma treatment

2004 ◽  
Author(s):  
Hisashi Ohsaki ◽  
Y. Shibayama ◽  
A. Kinbara ◽  
T. Watanabe ◽  
K. Fukuhisa ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Room Temperature ◽  
Rf Plasma ◽  
Amorphous Thin Films ◽  
Temperature Crystallization

LP-6: Late-News Poster: Plasma Treatment for Room-Temperature Crystallization of Amorphous Thin Films

2004 ◽  
Vol 35 (1) ◽  
pp. 446
Author(s):  
H. Ohsaki ◽  
Y. Shibayama ◽  
A. Kinbara ◽  
T. Watanabe ◽  
K. Fukuhisa ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Room Temperature ◽  
Amorphous Thin Films ◽  
Late News ◽  
Temperature Crystallization

Room temperature crystallization by RF plasma

2008 ◽  
Vol 516 (14) ◽  
pp. 4490-4494 ◽  
Author(s):  
H. Ohsaki ◽  
Y. Shibayama ◽  
M. Suzuki ◽  
A. Kinbara ◽  
H. Yashiro ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rf Plasma ◽  
Temperature Crystallization

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

Investigation of Plasma Treatment Conditions for Wafer-Scale Room-Temperature Bonding Using Ultrathin Au Films in Ambient Air

2019 ◽  
Vol 139 (7) ◽  
pp. 217-218
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Room Temperature ◽  
Ambient Air ◽  
Wafer Scale ◽  
Treatment Conditions

Room-temperature synthesis, growth mechanisms and opto-electronic properties of organic–inorganic halide perovskite CH3NH3PbX3 (X = I, Br, and Cl) single crystals

CrystEngComm ◽  
2021 ◽  
Author(s):  
Maryam Bari ◽  
Hua Wu ◽  
Alexei A. Bokov ◽  
Rana Faryad Ali ◽  
Hamel N. Tailor ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Single Crystals ◽  
Room Temperature ◽  
Solubility Curve ◽  
Inverse Temperature ◽  
Growth Mechanisms ◽  
Temperature Synthesis ◽  
Room Temperature Synthesis ◽  
Halide Perovskite ◽  
Temperature Crystallization

Growth of MAPbX3 (X = I, Br, and Cl) single crystals by room temperature crystallization (RTC) method, and the crystallization pathway illustrated by the solubility curve of MAPbCl3 in DMSO, compared with inverse temperature crystallization (ITC) method.

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