Charge trapping during constant current stress in Hf-doped Ta2O5 films sputtered on nitrided Si

2011 ◽  
Vol 519 (7) ◽  
pp. 2262-2267 ◽  
Author(s):  
N. Novkovski ◽  
E. Atanassova
Keyword(s):  
Charge Trapping ◽  
Constant Current ◽  
Current Stress

Ultrathin Gate Dielectric Growth at Reduced Pressure

1994 ◽  
Vol 342 ◽  
Author(s):  
Robert McIntosh ◽  
Carl Galewski ◽  
John Grant
Keyword(s):  
Gate Dielectric ◽  
Charge Trapping ◽  
Cmos Technology ◽  
Interface State ◽  
Constant Current ◽  
Reduced Pressure ◽  
Current Stress ◽  
Ultrathin Oxides ◽  
State Generation ◽  
Improved Characteristics

The Growth of ultrathin oxides in N2O ambient has been a subject of extensive research for submicron CMOS technology. Oxides grown in N2O tend to have a higher charge-to-breakdown, less charge trapping under constant current stress, and less interface state generation under current stress and radiation than conventional oxides grown in oxygen [1,2]. In addition the penetration of boron through N2O oxides is significantly less than through conventional thermal oxides [3]. The improved characteristics of N2O are due to an interfacial pileup of nitrogen atoms [1-3]. Thus the growth of thermal oxides in N2O provides a method for obtaining many of the more favorable aspects of reoxidized-nitrided silicon dioxides, with a much simpler process.

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

Constant Current Stress Breakdown in Ultrathin SiO2 Films

1993 ◽  
pp. 447-454
Author(s):  
Pushkar P. Apte ◽  
Taishi Kubota ◽  
Krishna C. Saraswat
Keyword(s):  
Constant Current ◽  
Current Stress ◽  
Sio2 Films

Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

2003 ◽  
Vol 43 (9-11) ◽  
pp. 1471-1476 ◽  
Author(s):  
K.L Pey ◽  
C.H. Tung ◽  
M.K. Radhakrishnan ◽  
L.J. Tang ◽  
Y. Sun ◽  
...  
Keyword(s):  
Failure Mechanism ◽  
Constant Current ◽  
Constant Voltage ◽  
Gate Oxides ◽  
Current Stress ◽  
Voltage Stress

Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

2020 ◽  
Vol 116 (20) ◽  
pp. 203501 ◽  
Author(s):  
Ying-Zhe Wang ◽  
Xue-Feng Zheng ◽  
Jia-Duo Zhu ◽  
Lin-Lin Xu ◽  
Sheng-Rui Xu ◽  
...  
Keyword(s):  
Constant Current ◽  
Current Stress ◽  
Uv C
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