Characterization of Si distribution at the tungsten/titanium nitride interface using secondary ion mass spectrometry — an investigation of the dynamic response of a chemical vapor deposition chamber

ABSTRACTTe enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations of 2×1017 to 5×1018 cm−.3 In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.

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Aluminum chemical vapor deposition reaction of dimethylaluminum hydride on TiN studied by X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry

Applied Surface Science ◽

10.1016/s0169-4332(00)00542-0 ◽

2001 ◽

Vol 171 (1-2) ◽

pp. 71-81 ◽

Cited By ~ 7

Author(s):

Kozo Tanaka ◽

Hiroyuki Yanashima ◽

Tadaaki Yako ◽

Kunimasa Kamio ◽

Kazumi Sugai ◽

...

Keyword(s):

Mass Spectrometry ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Chemical Vapor ◽

X Ray ◽

Secondary Ion ◽

Chemical Vapor Deposition Reaction

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Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.625 ◽

2006 ◽

Vol 527-529 ◽

pp. 625-628

Author(s):

Hun Jae Chung ◽

Sung Wook Huh ◽

A.Y. Polyakov ◽

Saurav Nigam ◽

Qiang Li ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Boron Concentration ◽

Secondary Ion Mass Spectrometry ◽

Nitrogen Concentration ◽

Chemical Vapor ◽

Bulk Crystals ◽

Hall Effect Measurements ◽

Site Competition ◽

Secondary Ion

Undoped 6H- and 4H-SiC crystals were grown by Halide Chemical Vapor Deposition (HCVD). Concentrations of impurities were measured by various methods including secondary-ion-mass spectrometry (SIMS). With increasing C/Si ratio, nitrogen concentration decreased and boron concentration increased as expected for the site-competition effect. Hall-effect measurements on 6H-SiC crystals showed that with the increase of C/Si ratio from 0.06 to 0.7, the Fermi level was shifted from Ec-0.14 eV (nitrogen donors) to Ev+0.6 eV (B-related deep centers). Crystals grown with C/Si > 0.36 showed high resistivities between 1053 and 1010 4cm at room temperature. The high resistivities are attributed to close values of the nitrogen and boron concentrations and compensation by deep defects present in low densities.

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Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.806.45 ◽

2014 ◽

Vol 806 ◽

pp. 45-50 ◽

Cited By ~ 2

Author(s):

Roxana Arvinte ◽

Marcin Zielinski ◽

Thierry Chassagne ◽

Marc Portail ◽

Adrien Michon ◽

...

Keyword(s):

Mass Spectrometry ◽

Vapor Deposition ◽

Secondary Ion Mass Spectrometry ◽

Chemical Vapor ◽

Present Contribution ◽

Growth Pressure ◽

Temperature Growth ◽

Dopant Incorporation ◽

Capacitance Voltage ◽

Secondary Ion

In the present contribution, the trends in voluntary incorporation of aluminum in 4H-SiC homoepitaxial films are investigated. The films were grown on Si-and C-face 4H-SiC 8°off substrates by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reactor. Secondary Ion Mass Spectrometry (SIMS) and capacitance-voltage (C-V) measurements were used to determine the Al incorporation in the samples. The influence of Trimethylaluminum (TMA) flow rate, growth temperature, growth pressure and C/Si ratio on the dopant incorporation was studied.

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