Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
2014 ◽
Vol 806
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pp. 45-50
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Keyword(s):
In the present contribution, the trends in voluntary incorporation of aluminum in 4H-SiC homoepitaxial films are investigated. The films were grown on Si-and C-face 4H-SiC 8°off substrates by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reactor. Secondary Ion Mass Spectrometry (SIMS) and capacitance-voltage (C-V) measurements were used to determine the Al incorporation in the samples. The influence of Trimethylaluminum (TMA) flow rate, growth temperature, growth pressure and C/Si ratio on the dopant incorporation was studied.
2001 ◽
Vol 171
(1-2)
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pp. 71-81
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2000 ◽
Vol 165
(2-3)
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pp. 154-158
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2006 ◽
Vol 527-529
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pp. 625-628
2003 ◽
Vol 17
(9)
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pp. 996-1001
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