scholarly journals Experiments on high-power ion beam generationin self-insulated diodes

1991 ◽  
Vol 9 (3) ◽  
pp. 691-698 ◽  
Author(s):  
V. M. Bystritskii ◽  
Yu. A. Glyshko ◽  
A. A. Sinebrjukhov ◽  
A. V. Kharlov
Keyword(s):  
Pulse Duration ◽  
High Power ◽  
Focal Plane ◽  
Ion Beam ◽  
Plasma Source ◽  
Ion Beams ◽  
Magnetic Insulation ◽  
Matched Load ◽  
Opening Switch ◽  
Diode Voltage

Experimental results are given on high-power ion beams (HPIB) generation in a vacuumspherical focusing diode with self-magnetic insulation, obtained from the nanosecond accelerator PARUS with 0.2-TW power and 60-ns pulse duration for a matched load. When the passive plasma source of the ions was used, the efficiency of the HPIB generationwas measured to be as high as 20% for 700-kV diode voltage and 10-kA/cm2 beam density in the focal plane.The application of a coaxial plasma opening switch (POS) prior to the diode resultedin a factor-of-1.8 increase in the diode power in comparison with a match operation inthe absence of a POS.

scholarly journals Experiments on generation of a high-power ion beam in a plasma-filled diode

1993 ◽  
Vol 11 (1) ◽  
pp. 269-276
Author(s):  
V. M. Bystritskii ◽  
A. V. Kharlov ◽  
G. A. Mesyats ◽  
A. V. Mytnikov ◽  
A. A. Sinebrjukhov
Keyword(s):  
High Power ◽  
Ion Beam ◽  
Optimal Time ◽  
Stable Operation ◽  
Magnetic Insulation ◽  
Matched Load ◽  
Opening Switch ◽  
Power Enhancement ◽  
Switch Mode ◽  
Ion Current Density

The experimental results on high-power ion beams (HPIB) generation in a plasma-filled, spherical-focusing diode with self-magnetic insulation that was placed for a load at nanosecond accelerator PARUS of 0.2-TW power and 60-ns pulse duration (in a matched load case) are given. The regimes of plasma-filled diode operation and generation of the ion beam were investigated. For optimal time delay between the plasma gun's pulse and accelerator firing, the stable operation in the plasma opening switch mode with a power enhancement factor of 2.3 and efficiency of ion beam generation of 20–25% was obtained. The maximal value of the ion current density reached in the focal plane was 15 kA/cm2.

scholarly journals Design, development, and testing of non-intercepting profile diagnostics for intense heavy ion beams using a capacitive pickup and beam induced gas fluorescence monitors

2006 ◽  
Vol 24 (4) ◽  
pp. 541-551 ◽  
Author(s):  
F. BECKER ◽  
A. HUG ◽  
P. FORCK ◽  
M. KULISH ◽  
P. NI ◽  
...  
Keyword(s):  
Focal Plane ◽  
Energy Deposition ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
Ion Beams ◽  
High Energy Density ◽  
Design Development ◽  
Heavy Ion Beam ◽  
Beam Parameters

An intense and focused heavy ion beam is a suitable tool to generate high energy density in matter. To compare results with simulations it is essential to know beam parameters as intensity, longitudinal, and transversal profile at the focal plane. Since the beam's energy deposition will melt and evaporate even tungsten, non-intercepting diagnostics are required. Therefore a capacitive pickup with high resolution in both time and space was designed, built and tested at the high temperature experimental area at GSI. Additionally a beam induced fluorescence monitor was investigated for the synchrotron's (SIS-18) energy-regime (60–750 AMeV) and successfully tested in a beam-transfer-line.

Effect of high-power ion beams on the surface topography and structure of submicrocrystalline titanium alloy subsurface layers

2018 ◽  
pp. 82-91
Author(s):  
M. V. Zhidkov ◽  
A. E. Ligachev ◽  
Yu. R. Kolobov ◽  
G. V. Potemkin ◽  
G. E. Remnev
Keyword(s):  
Grain Size ◽  
Titanium Alloy ◽  
High Power ◽  
Ion Beam ◽  
Structural Phase ◽  
Subsurface Layer ◽  
Ion Beams ◽  
Uniform Structure ◽  
Average Grain Size ◽  
Subsurface Layers

The study covers the topography and structural phase state of VT1-0 and VT6 submicrocrystalline titanium alloy subsurface layers irradiated by high power pulsed carbon ion beams (ion energy is 250 keV, pulse duration is ~100 ns, pulse current density is 150–200 A/cm2; surface energy density of a single pulse is j ~ 3 J/cm2 when irradiating VT1-0 titanium alloy samples and j ~ 1 J/cm2 when processing VT6 titanium alloy samples; pulse number is 1, 5, 10, and 50). The surface of samples was subjected to preliminary mechanical grinding and polishing before irradiation. It was shown that surface defects are formed on the surface of the alloys after irradiation, namely craters of different shapes and geometries with a diameter from fractions of a micron to 80–100 μm. At the same time, the grain structure in the subsurface layer becomes more homogeneous in terms of grain size and equiaxial properties. The initial state of titanium alloys is characterized by a fairly homogeneous structure with an average grain size of ~0,31 μm for VT1-0 and ~0,9 μm for VT6. After one irradiation pulse, grain growth to 0,54 μm in the transverse direction is observed in the subsurface layer of the VT1-0 alloy (j ~ 3 J/cm2), while grain size decreases to ~ 0,54 μm in the VT6 alloy (j ~ 1 J/cm2). After 50 pulses, the average grain size in the subsurface layer reaches ~2,2 μm for the VT1-0 alloy and ~1,6 μm for VT6. It should be noted that a rather uniform structure with equiaxed grains is formed as early as after treating with 1 high power ion beam pulse.

scholarly journals Opportunities for nuclear reaction studies at future facilities

2019 ◽  
Vol 22 ◽  
pp. 10
Author(s):  
M. Veselsky ◽  
J. Klimo ◽  
N. Vujisicova ◽  
G. A. Souliotis
Keyword(s):  
Nuclear Reaction ◽  
High Power ◽  
Nuclear Physics ◽  
Nuclear Reactions ◽  
Ion Beam ◽  
Ion Beams ◽  
Radioactive Ion Beams ◽  
High Power Laser ◽  
Power Laser ◽  
The Future

Opportunities for investigations of nuclear reactions at the future nuclear physics facilities such as radioactive ion beam facilities and high-power laser facilities are considered. Post-accelerated radioactive ion beams offer possibilities for study of the role of isospin asymmetry in the reaction mechanisms at various beam energies. Fission barrier heights of neutron-deficient nuclei can be directly determined at low energies. Post-accelerated radioactive ion beams, specifically at the future facilities such as HIE-ISOLDE, SPIRAL-2 or RAON-RISP can be also considered as a candidate for production of very neutron-rich nuclei via mechanism of multi-nucleon transfer. High-power laser facilities such as ELI-NP offer possibilities for nuclear reaction studies with beams of unprecedented properties. Specific cases such as ternary reactions or even production of super-heavy elements are considered.

Pulsed Ion Beam Annealing Of Nickel Thin Films on Silicon

1981 ◽  
Vol 7 ◽  
Author(s):  
L.J. Chen ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
J.E.E. Baglin
Keyword(s):  
Thin Films ◽  
High Power ◽  
Lower Energy ◽  
Ion Beam ◽  
Ion Beams ◽  
Cellular Structures ◽  
Nickel Thin Films

ABSTRACTHigh power pulsed ion beams have been applied to anneal nickel thin films on silicon. RBS and TEM have been performed to study ion beam induced effects. With Ba+ ion beams at energy densities greater than 0.7 J/cm2 and H+ beams above about 1.3 J/cm2, cellular structures were found. At about 0.6 J/cm2 for Ba+ (about 1.0 J/cm2 for H+), epitaxial NiSi2 was formed. At lower energy densities, polycrystalline layers containing a mixture of silicide phases were observed. With ion beam annealing, melting starts at the Ni/Si interface and epitaxy was found at energy densities well below that required to melt Ni or crystalline Si.

scholarly journals Generation and focusing of high-power ion beams in a magnetically insulated diode with applied B field

1991 ◽  
Vol 9 (3) ◽  
pp. 699-711 ◽  
Author(s):  
V. M. Bystritskii ◽  
I. V. Lisitsyn ◽  
S. N. Volkov ◽  
Ya. E. Krasik ◽  
N. M. Polkovnikova
Keyword(s):  
High Power ◽  
Peak Pressure ◽  
Ion Beam ◽  
Ion Beams ◽  
Plasma Ablation ◽  
Ablation Pressure ◽  
Transport Region ◽  
Preformed Plasma ◽  
The Impact

The results of high-power ion beam (HPIB) generation and in the magnetically insulated diode (MID) installed on a 3 × 1010-W nanosecond accelerator are given. The possibility of efficient HPIB ballistic focusing with the use of the preformed plasma in the HPIB transport region was demonstrated.Several new diagnostics (spring pendulum and acoustic probe) were used to measure the plasma ablation pressure during the impact of the HPIB with the target.The highest degree of HPIB focusing attained during the experiments with spherical geometries of the diode electrodes was equal to 60. The ablation average pressures measured by the spring pendulum gave several kilobars for 8–10 kA/cm2 of HPIB density. The peak pressure measured by acoustic probes attained tens of kilobars for the same HPIB current amplitudes.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

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