Deformation Structure of Beta Titanium Alloys

1973 ◽  
Vol 31 ◽  
pp. 166-167
Author(s):  
S. Fujishiro ◽  
J. A. Roberson
Keyword(s):  
Titanium Alloys ◽  
Single Crystals ◽  
Room Temperature ◽  
Optical Metallography ◽  
X Ray ◽  
Deformation Structures ◽  
Compression Strain ◽  
Beta Titanium ◽  
Transmission Electron ◽  
Beta Titanium Alloys

Prototype commercial beta titanium alloys (Ti-11.5w/oMo-6w/oZr-4.5w/oSn, so called beta-III) single crystals have been deformed by compression, and the deformation structures were investigated by optical metallography, transmission electron microscopy and X-ray technique. Macro grain crystals have been grown by a conventional strain anneal technique, and single crystals were prepared by cutting large grains. One large grain, whose surface is nearly a (001) plane, was cut into three parallelopiped crystals, approxi- mately 1/4 × 1/4 × 3/8”. After 2% of compression strain was introduced to these crystals at room temperature, TEM was performed on thin films which were prepared from the slices cut,near parallel to (001) planes.

Effect of trytophan as dopant on potassium acid phthalate single crystals

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Visible Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Slow Evaporation Technique ◽  
Absorption Studies ◽  
Evaporation Technique ◽  
Potassium Acid Phthalate ◽  
Acid Phthalate

Optically transparent single crystals of potassium acid phthalate (KAP, 0.5 g) 0.05 g and 0.1 g (1 and 2 mol %) trytophan were grown in aqueous solution by slow evaporation technique at room temperature. Single crystal X- ray diffraction analysis confirmed the changes in the lattice parameters of the doped crystals. The presence of functional groups in the crystal lattice has been determined qualitatively by FTIR analysis. Optical absorption studies revealed that the doped crystals possess very low absorption in the entire visible region. The dielectric constant has been studied as a function of frequency for the doped crystals. The thermal stability was evaluated by TG-DSC analysis.

Photoluminescence Enhancement of CdS Nanocrystals Fabricated on Dithiocarbamate Functionalized PET Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 1511-1515
Author(s):  
Chun Lin Zhao ◽  
Li Xing ◽  
Xiao Hong Liang ◽  
Jun Hui Xiang ◽  
Fu Shi Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hexagonal Structure ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Morphological Studies ◽  
Transmission Electron

Cadmium sulfide (CdS) nanocrystals (NCs) were self-assembled and in-situ immobilized on the dithiocarbamate (DTCs)-functionalized polyethylene glycol terephthalate (PET) substrates between the organic (carbon disulfide diffused in n-hexane) –aqueous (ethylenediamine and Cd2+ dissolved in water) interface at room temperature. Powder X-ray diffraction measurement revealed the hexagonal structure of CdS nanocrystals. Morphological studies performed by scanning electron microscopy (SEM) and high-resolution transmission electron microscope (HRTEM) showed the island-like structure of CdS nanocrystals on PET substrates, as well as energy-dispersive X-ray spectroscopy (EDS) confirmed the stoichiometries of CdS nanocrystals. The optical properties of DTCs modified CdS nanocrystals were thoroughly investigated by ultraviolet-visible absorption spectroscopy (UV-vis) and fluorescence spectroscopy. The as-prepared DTCs present intrinsic hydrophobicity and strong affinity for CdS nanocrystals.

scholarly journals Facile Organometallic Synthesis of Fe-Based Nanomaterials by Hot Injection Reaction

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1141
Author(s):  
Georgia Basina ◽  
Hafsa Khurshid ◽  
Nikolaos Tzitzios ◽  
George Hadjipanayis ◽  
Vasileios Tzitzios
Keyword(s):  
Room Temperature ◽  
Colloidal Particles ◽  
Iron Pentacarbonyl ◽  
Vibrating Sample Magnetometer ◽  
X Ray Diffraction ◽  
Organometallic Synthesis ◽  
X Ray ◽  
Transmission Electron ◽  
Hot Injection ◽  
The Stability

Fe-based colloids with a core/shell structure consisting of metallic iron and iron oxide were synthesized by a facile hot injection reaction of iron pentacarbonyl in a multi-surfactant mixture. The size of the colloidal particles was affected by the reaction temperature and the results demonstrated that their stability against complete oxidation related to their size. The crystal structure and the morphology were identified by powder X-ray diffraction and transmission electron microscopy, while the magnetic properties were studied at room temperature with a vibrating sample magnetometer. The injection temperature plays a very crucial role and higher temperatures enhance the stability and the resistance against oxidation. For the case of injection at 315 °C, the nanoparticles had around a 10 nm mean diameter and revealed 132 emu/g. Remarkably, a stable dispersion was created due to the colloids’ surface functionalization in a nonpolar solvent.

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

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