Crystallographic orientation of aluminum whiskers formed by electromigration using transmission electron microscopy
Electromigration is a well known phenomenon in the aluminum films of an integrated circuit and occurs at elevated temperatures under the influence of current densities exceeding 10 amps/cm2. The failure modes are characteristically cracks, voids or hillocks in the metal lines, causing open-circuits. The majority of research in the electromigration of aluminum conductors examines the formation of these voids and hillocks in the linestripes. This is unfortunate since experiments have shown that short-circuits caused by whisker formation between adjacent stripes or between multi-level structures can be equally damaging to device performance. Most previous work has involved examining whiskers grown by annealing, however, very little work has been carried out on whiskers produced by electromigration. In this investigation aluminum whiskers formed by electromigration were studied with a transmission electron microsope to determine their crystallographic orientation.