Replica observation by transmission electron microscopy of GaAs surface grown on vicinal Si (001)

1992 ◽  
Vol 50 (2) ◽  
pp. 1378-1379
Author(s):  
T. Inoue ◽  
Y. Kikuchi ◽  
T. Sasaki ◽  
T. Eshita ◽  
M. Yoshida
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Gaas Surface ◽  
Native Oxide ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

Over the past several years, heteroepitaxy of GaAs on Si substrates has received strong interest because of its potential for monolithic integration of GaAs optical devices with Si integrated circuit technology. For heteroepitaxy of GaAs on Si substrate, Si(001) substrates oriented toward [110] by a few degrees (1) are used, therefore the GaAs epitaxial layer is expected to have a stepped surface. In this study, we characterized the GaAs surface, grown on vicinal Si(001 ) substrates, by replica observation using transmission electron microscopy (TEM).The Si substrates were oriented 2 degrees off towards [110] and their surface was expected to have a regular array of [110] steps, 8 nm apart. A two-step growth process (1) was employed to grow GaAs on Si(001) by metalorganic chemical vapor deposition (MOCVD). The Ga source was trimetyl gallium (TMG) and As source was AsH3. Following 10 minutes of 1000°C heat treatment in a H2, gas flow to remove the native oxide, 20 nm GaAs buffer layers were grown at 450°C. They were then heated to a growth temperature of 650°C to grow the GaAs epitaxial layers an additional 3 μm.

The effect of a-GaAs/a-Si double buffer layers on GaAs-on-Si as determined by transmission electron microscopy

2006 ◽  
Vol 21 (7) ◽  
pp. 852-856 ◽  
Author(s):  
Wu-Yih Uen ◽  
Zhen-Yu Li ◽  
Shan-Ming Lan ◽  
Tsun-Neng Yang ◽  
Hwa-Yuh Shin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Buffer Layers ◽  
Gaas On Si ◽  
Transmission Electron

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

1992 ◽  
Vol 263 ◽  
Author(s):  
Ting-Yen Chiang ◽  
En-Huery Liu ◽  
Der-Hwa Yiin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Solution Treatment ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

ABSTRACTThis paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

Evaluation of Anti-Phase-Boundaries in GaAs/Si Heterostructures by Transmission Electron Microscopy

1989 ◽  
Vol 148 ◽  
Author(s):  
O. Ueda ◽  
T. Soga ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Three Dimensional ◽  
Buffer Layers ◽  
Phase Boundaries ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Strained Layer Superlattices ◽  
And Behavior

ABSTRACTThe nature and behavior of anti-phase-boundaries in GaAs/Si heterostructures using GaP, GaP/GaAsP and GaAsP/GaAs strained layer superlattices as intermediate buffer layers, have been investigated by transmission electron microscopy. It has been found that anti-phasedomains are very complicated three dimensional polygons consisting of several sub-boundaries in different orientations. Self-annihilation of anti-phase-domains during crystal growth of GaAs on (001)just or (001)2°off Si substrates is directly observed for the first time through planview and cross-sectional observations. Based on these findings, a mechanism of annihilation of these domains is proposed.

Growth and Characterization of Chemically Vapor Deposited Beta-Sic Epilayers on 6H Alpha-Sic Substrates

1986 ◽  
Vol 77 ◽  
Author(s):  
H. S. Kong ◽  
J. T. Glass ◽  
R. F. Davis ◽  
S. R. Nutt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gas Flow ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Film Substrate

ABSTRACTHigh quality, β-SiC (111) monocrystalline films have been epitaxially grown via chemical vapor deposition at 1683K on hexagonal 6H αc-SiC (0001) using a (SiH4 + C2H4)/(H2) gas flow rate ratio of 1:3000. Cross-sectional transmission electron microscopy showed almost no line or planar defects at the film/substrate interface and a low density within the bulk of the film. Furthermore, high resolution transmission electron microscopy revealed a coherent β-SiC/α-SiC interface. Secondary ion mass spectrometry indicated that the diffusion of the Al in the substrate into the as-grown film was negligible. Unintentionally doped films are n-type with the carrier concentrations virtually always in the range of 1016-1017cm3, as determined by capacitance-voltage measurements. A gold-β-SiC Schottky diode having an ideality constant of approximately 1.6 was fabricated on the β-SiC epilayer.

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

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