Image Formation With Upper and Lower Secondary Electron Detectors in the Low Voltage Field-Emission SEM

1998 ◽  
Vol 4 (S2) ◽  
pp. 260-261
Author(s):  
J. Liu
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Secondary Electron ◽  
Low Voltage ◽  
Incident Beam ◽  
Sample Surface ◽  
Backscattered Electrons ◽  
Sample Chamber ◽  
Scale Surface ◽  
Short Working

High-resolution secondary electron (SE) imaging was first demonstrated at 100 kV in the STEM a decade ago. High-resolution SE imaging is now routinely obtainable in field-emission SEMs. Although nanometer-scale surface features can be examined at low incident beam voltages we still do not fully understand the factors that affect the contrast of low voltage SE images. At high incident beam voltages, SE1 (SEs generated by the incident probe) and SE2 (SEs generated by backscattered electrons at the sample surface) can be spatially separated. SE1 carries high-resolution detail while SE2 contributes to background. At low incident beam voltages, however, the interaction volume of the incident electrons shrinks rapidly with decreasing incident beam voltage. Thus, both the SE1 and SE2 signals carry high-resolution information. At low incident beam voltages, SE3 (SEs generated by backscattered electrons impinging on the sample chamber, pole pieces and etc.) also carries high-resolution detail and contributes significantly to the collected signal, especially for high atomic number materials and at short working distances.

Resolution in the low-voltage SEM

1984 ◽  
Vol 42 ◽  
pp. 444-445
Author(s):  
David C Joy
Keyword(s):  
Spatial Distribution ◽  
High Resolution ◽  
Secondary Electron ◽  
Low Voltage ◽  
Incident Beam ◽  
Secondary Electron Image ◽  
Electron Image ◽  
Integrated Intensities

The resolution of a secondary electron image is determined by the spatial distribution of the secondaries leaving the surface. This distribution results from two components, SE1 which are the secondaries generated by the incident beam and which carry the high resolution information, and SE2 which are the secondaries produced by exiting electrons and which carry information mimicing that in the backscattered signal. The integrated intensities of these two components are comparable, but their spatial characteristies are quite different. In order to study the factors which limit resolution it is therefore necessary to model the events which give rise to the two groups of secondaries.

On the Microanalysis of Small Precipitates at Low Voltage with a FE-SEM

1999 ◽  
Vol 5 (S2) ◽  
pp. 308-309
Author(s):  
Raynald Gauvin ◽  
Pierre Hovington
Keyword(s):  
Field Emission ◽  
Secondary Electron ◽  
Low Voltage ◽  
Chromatic Aberration ◽  
Incident Electron Energy ◽  
Objective Lens ◽  
Type I ◽  
Backscattered Electrons ◽  
Electron Microscopes ◽  
Scanning Electron

The observation of microstructural features smaller than 300 nm is generally performed using Transmission Electron Microscopy (TEM) because conventional Scanning Electron Microscopes (SEM) do not have the resolution to image such small phases. Since the early 1990’s, a new generation of microscopes is now available on the market. These are the Field Emission Gun Scanning Electron Microscope with a virtual secondary electron detector. The field emission gun gives a higher brightness than those obtained using conventional electron filaments allowing enough electrons to be collected to operate the microscope with incident electron energy, E0, below 5 keV, with probe diameter smaller than 2.5 nm. Furthermore, what gives FE-SEM outstanding resolution is the combination of new magnetic lenses with a virtual secondary electron (SE) detector. The new lenses are designed to reduce the spherical and chromatic aberration coefficients, giving a smaller probe size. Contrary to the conventional systems, the SE detector is located above the objective lens and it becomes a virtual or through-the-lens (TTL) detector. Therefore, the SE image is mostly made up of all SEs of type I, almost eliminating those of type II and III which are generated by the backscattered electrons inside the specimen as well as in the chamber. It has been shown recently that Nb(CN) precipitates in Fe, as small than 10 nm, can be imaged with a FE-SEM Hitachi S-4500 with the TTL detector.

Development of a conical anode Fe-gun for low voltage SEM

1988 ◽  
Vol 46 ◽  
pp. 978-979
Author(s):  
T. Miyokawa ◽  
S. Norioka ◽  
S. Goto
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Low Voltage ◽  
Irradiation Damage ◽  
Cold Cathode ◽  
Virtual Source ◽  
Source Position ◽  
Electrostatic Lens ◽  
Electrostatic Lenses ◽  
Wide Range

Field emission SEMs (FE-SEMs) are becoming popular due to their high resolution needs. In the field of semiconductor product, it is demanded to use the low accelerating voltage FE-SEM to avoid the electron irradiation damage and the electron charging up on samples. However the accelerating voltage of usual SEM with FE-gun is limited until 1 kV, which is not enough small for the present demands, because the virtual source goes far from the tip in lower accelerating voltages. This virtual source position depends on the shape of the electrostatic lens. So, we investigated several types of electrostatic lenses to be applicable to the lower accelerating voltage. In the result, it is found a field emission gun with a conical anode is effectively applied for a wide range of low accelerating voltages.A field emission gun usually consists of a field emission tip (cold cathode) and the Butler type electrostatic lens.

Ultra-high resolution SEMI-in-lens type FE-SEM, JSM-6320F, with strong magnetic-field lens with built-in secondary-electron detector

1994 ◽  
Vol 52 ◽  
pp. 484-485
Author(s):  
T. Miyokawa ◽  
H. Kazumori ◽  
S. Nakagawa ◽  
C. Nielsen
Keyword(s):  
High Resolution ◽  
Secondary Electron ◽  
Spherical Aberration ◽  
Incident Beam ◽  
Chromatic Aberration ◽  
Magnetic Flux Density ◽  
Objective Lens ◽  
Electron Detector ◽  
High Resolution Images ◽  
Working Distance

We have developed a strongly excited objective lens with a built-in secondary electron detector to provide ultra-high resolution images with high quality at low to medium accelerating voltages. The JSM-6320F is a scanning electron microscope (FE-SEM) equipped with this lens and an incident beam divergence angle control lens (ACL).The objective lens is so strongly excited as to have peak axial Magnetic flux density near the specimen surface (Fig. 1). Since the speciien is located below the objective lens, a large speciien can be accomodated. The working distance (WD) with respect to the accelerating voltage is limited due to the magnetic saturation of the lens (Fig.2). The aberrations of this lens are much smaller than those of a conventional one. The spherical aberration coefficient (Cs) is approximately 1/20 and the chromatic aberration coefficient (Cc) is 1/10. for accelerating voltages below 5kV. At the medium range of accelerating voltages (5∼15kV). Cs is 1/10 and Cc is 1/7. Typical values are Cs-1.lmm. Cc=l. 5mm at WD=2mm. and Cs=3.lmm. Cc=2.9 mm at WD=5mm. This makes the lens ideal for taking ultra-high resolution images at low to medium accelerating voltages.

Studies of Supported Metal Catalysts Using Low Voltage Biased Secondary Electron Imaging in a JSM-6320f Fe-SEM

1997 ◽  
Vol 3 (S2) ◽  
pp. 1223-1224
Author(s):  
J. Liu ◽  
R. L. Ornberg ◽  
J. R. Ebner
Keyword(s):  
Secondary Electron ◽  
Low Voltage ◽  
Supported Catalysts ◽  
High Surface ◽  
High Surface Area ◽  
Incident Beam ◽  
Active Species ◽  
Supported Metal Catalysts ◽  
Active Components ◽  
Electron Imaging

Many industrial catalysts have a complex geometric structure to enable reacting gases or fluids to reach as much of the active surface of the catalyst as possible. The catalyzing surface frequently consists of a complex chemical mixture of different phases produced by an evolved chemical process. The active components are often very small particles dispersed on high-surface-area supports. The catalytic properties of this type of catalyst depend on the structure, composition, and morphology of the active species as well as the supports. TEM/STEM and associated techniques have been used extensively to characterize the structure and composition of supported catalysts. Surface morphology of supported catalysts is generally examined by secondary electron imaging, especially at low incident beam energies. It is, however, frequently found that small metal particles are not usually seen in SE images because of the complication of support topography

Visibility of Small Metalllic Catalyst Particles in High-Resolution Secondary and Backscattered Electron Images

1999 ◽  
Vol 5 (S2) ◽  
pp. 720-721
Author(s):  
Jingyue Liu
Keyword(s):  
High Resolution ◽  
Metallic Nanoparticles ◽  
Low Voltage ◽  
High Surface ◽  
High Surface Area ◽  
Metal Catalyst ◽  
Catalyst Supports ◽  
Metallic Particles ◽  
Backscattered Electrons ◽  
Backscattered Electron

Metallic nanoparticles finely dispersed onto high surface-area supports play an important role in heterogeneous catalysis. The performance of a supported metal catalyst can be directly related to the size and spatial distribution of the metallic nanoparticles. With the recent development of highresolution SEM instruments, it is now possible to observe nanoparticles in a field emission SEM. At low voltages, surface details of catalyst supports as well as metallic nanoparticles can be observed. The particle contrast in low voltage SEM images, however, is still not well understood. We have previously shown that the contrast of metallic particles can be enhanced if a small positive potential is applied to the sample. It is suggested that backscattered electrons (BE) significantly contribute to the visibility of metallic nanoparticles in high-resolution SE images. In this paper, we report further study on the origin of particle contrast in high-resolution SE images.Figure 1 shows a set of SE images of the same area of a carbon supported Pt catalyst.

Field Emission Scanning Electron Microscopy Studies of Industrial Polymers - A Survey

1998 ◽  
Vol 4 (S2) ◽  
pp. 814-815
Author(s):  
E.F. Osten ◽  
M.S. Smith
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Resolution ◽  
Field Emission ◽  
Low Voltage ◽  
Structural Features ◽  
X Ray Diffraction ◽  
Styrene Acrylonitrile ◽  
Microscopy Techniques ◽  
Scanning Electron

We are using the term "Industrial Polymers" to refer to polymers [plastics] that are produced by the ton or (in the case of films) by the mile. For example, in descending order of world-wide use (tonnage), the top eight of these polymers are polyethylene (PE), polyvinyl chloride (PVC), polypropylene (PP), styrene polymers (including polystyrene - PS, and acrylonitrile-butadienestyrene/ styrene-acrylonitrile - ABS/SAN), polyesters (PETP), polyurethane (PU), phenolics and aminoplastics.Industrial polymers, which have been produced by the millions of tons for the last five decades and are of obvious social and economic importance, have been exhaustively characterized. Structural features which affect physical properties and indicate process variables have been studied by many techniques other than microscopy (x-ray diffraction, thermal analysis, rheology, chromatographies, etc.). Microscopy techniques for polymer characterization have been well documented. Our motivation to apply field emission (high resolution) scanning electron microscopy to the study of polymers is: (1) The application of low voltage, high resolution SEM to biological materials is well characterized.

Structural Evidence for Actin-like Filaments in Toxoplasma gondii Using High-Resolution Low-Voltage Field Emission Scanning Electron Microscopy

2003 ◽  
Vol 9 (4) ◽  
pp. 330-335 ◽  
Author(s):  
Heide Schatten ◽  
L. David Sibley ◽  
Hans Ris
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Resolution ◽  
Toxoplasma Gondii ◽  
Field Emission ◽  
Low Voltage ◽  
Protozoan Parasite ◽  
Cytoskeletal Network ◽  
Unicellular Organisms ◽  
Scanning Electron

The protozoan parasite Toxoplasma gondii is representative of a large group of parasites within the phylum Apicomplexa, which share a highly unusual motility system that is crucial for locomotion and active host cell invasion. Despite the importance of motility in the pathology of these unicellular organisms, the motor mechanisms for locomotion remain uncertain, largely because only limited data exist about composition and organization of the cytoskeleton. By using cytoskeleton stabilizing protocols on membrane-extracted parasites and novel imaging with high-resolution low-voltage field emission scanning electron microscopy (LVFESEM), we were able to visualize for the first time a network of actin-sized filaments just below the cell membrane. A complex cytoskeletal network remained after removing the actin-sized fibers with cytochalasin D, revealing longitudinally arranged, subpellicular microtubules and intermediate-sized fibers of 10 nm, which, in stereo images, are seen both above and below the microtubules. These approaches open new possibilities to characterize more fully the largely unexplored and unconventional cytoskeletal motility complex in apicomplexan parasites.

Energy Filter for High Resolution Low-Loss Scanning Electron Microscopy

1975 ◽  
Vol 33 ◽  
pp. 148-149 ◽  
Author(s):  
A. N. Broers ◽  
J. Sokolowski
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Resolution ◽  
Energy Loss ◽  
Incident Beam ◽  
Sample Surface ◽  
Low Loss ◽  
Loss Method ◽  
Point To Point ◽  
Scanning Electron

Images are formed in low-loss scanning electron microscopy with electrons scattered from the sample surface with little energy loss. These Electrons have not penetrated deeply into the sample and only provide information about the region immediately surrounding the incident beam. High resolution can therefore be obtained. The low energy loss electrons can be selected in two ways; by the use of an energy filter, or by arranging the detector so that only those electrons emerging almost parallel to the sample surface are collected. For optimum operation both approaches can be used simultaneously. With the high resolution low-loss method the sample is placed at the center of the pole-piece gap of a condenser-objective final lens. The action of the second half of the lens is such that for most samples only electrons emerging almost parallel to the specimen surface reach the detector. An energy filter is therefore not necessary to form a high resolution image and 20 Å point-to-point resolution (7 Å resolution using the width of the dark space criterion) has already been demonstrated without one.

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