scholarly journals Structure and Microstructure of Y-doped Strontium Titanate Ceramics

2008 ◽  
Vol 14 (S3) ◽  
pp. 11-12 ◽  
Author(s):  
Alexander Tkach ◽  
Paula M. Vilarinho ◽  
Ian M. Reaney
Keyword(s):  
Electron Microscopy ◽  
Solubility Limit ◽  
Second Phase ◽  
X Ray Diffraction ◽  
Solid Solubility Limit ◽  
Local Composition ◽  
Transmission Electron ◽  
High Dielectric ◽  
Titanate Ceramics ◽  
Structure And Microstructure

High dielectric constant important for functional electronic applications have been reported in the Sr1-1.5xYxTiO3 ceramic system with a maximum value for x = 0.01 coincident with the maximum grain size. This observation points to a possible correlation between the dielectric response and the microstructure of these ceramics. A solid solubility limit around x = 0.04 was reported recently by Fu et al., although the second phase was observed by X-ray diffraction only for x = 0.07. Therefore, the structure, microstructure and local composition of Sr1-1.5xYxTiO3 ceramics (x = 0 − 0.05) prepared by conventional mixed oxide method is investigated in this work by transmission electron microscopy (TEM) and scanning electron microscopy (SEM) equipped with energy dispersive spectroscopy facilities.

Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates

2019 ◽  
Vol 963 ◽  
pp. 127-130
Author(s):  
Jörg Pezoldt ◽  
Charbel Zgheib ◽  
Thomas Stauden ◽  
Gernot Ecke ◽  
Thomas Kups ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Solubility Limit ◽  
Solid Solubility Limit ◽  
Transmission Electron ◽  
Section Electron ◽  
Heteroepitaxial Layers ◽  
Section Electron Microscopy

Ternary (Si1-xCy)Gex+y solid solutions were grown on Si-face 4H-SiC applying atomic layer molecular beam epitaxy at low temperatures. The grown layers consist of twinned 3C-SiC revealed by cross section electron microscopy. The germanium was incorporated on silicon lattice sites as revealed by atomic location by channeling enhanced microanalysis transmission electron microscopy studies. The Ge concentration of the grown 3C-(Si1-xCy)Gex+y heteroepitaxial layers decreases with increasing growth temperatures, but exceeds the solid solubility limit.

Study on the Preparation and Micro Structure of the Mg Containing Porous HA with Ultra-Fine Grain

2009 ◽  
Vol 610-613 ◽  
pp. 1132-1136
Author(s):  
Xing Yi Li ◽  
Xiang Cai Meng ◽  
Guo Quan Liu ◽  
Shi Dan Yuan
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Chemical Precipitation ◽  
Second Phase ◽  
X Ray Diffraction ◽  
Micro Structure ◽  
X Ray ◽  
Fine Grain ◽  
Transmission Electron ◽  
Second Phase Particles

The Nano-HA powder were synthesized by chemical precipitation with Ca(H2PO4)2•H2O and Ca (OH)2 and porous HA was prepared by sintering with magnesium as pore-creator. Nano-HA powder and porous HA were characterized by wide angle X-ray diffraction, transmission electron microscopy(TEM), scanning electron microscopy (SEM), SEM in combination with energy dispersive X-ray spectroscopy (SEM-EDX), X-ray photoelectron spectroscopy. The experimental results show that HA powder synthesized by chemical precipitation is nanometer powder. Magnesium was ideal pore-creator for preparation of porous materials. The grain size of porous HA was sub-micron and MgO which existed in the grain boundary of HA as a second phase particles that played the roles of inhibiting the HA grain growth.

Transmission electron microscopy study of n= 1–5 Srn+1TinO3n+1 epitaxial thin films

2001 ◽  
Vol 16 (7) ◽  
pp. 2013-2026 ◽  
Author(s):  
W. Tian ◽  
X. Q. Pan ◽  
J. H. Haeni ◽  
D. G. Schlom
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Structure And Microstructure ◽  
Image Simulations

Epitaxial Srn+1TinO3n+1 thin films with n = 1–5 were synthesized on (001) SrTiO3 substrates by reactive molecular beam epitaxy. The structure and microstructure of the films were investigated by x-ray diffraction, transmission electron microbeam diffraction, and high-resolution transmission electron microscopy (HRTEM) in combination with computer image simulations. Both diffraction and HRTEM studies revealed that all the films are epitaxially oriented with their c axis perpendicular to the (001) SrTiO3 plane of the substrate. Detailed investigations using quantitative HRTEM methods indicated that the films have the expected n = 1–5 structures of the Ruddlesden–Popper Srn+1TinO3n+1 homologous series. Among these films, Sr2TiO4, Sr3Ti2O7, and Sr4Ti3O10 thin films are nearly free of intergrowths, while Sr5Ti4O13 and Sr6Ti5O16 thin films contain noticeably more antiphase boundaries in their perovskite sheets and intergrowth defects. We show that these results are consistent with what is known about the thermodynamics of Srn+1TinO3n+1 phases.

Effects of Ho-Doping on Crystal Structure and Microstructure of La0.7Sr0.3MnO3 Ceramics

2013 ◽  
Vol 745-746 ◽  
pp. 96-101 ◽  
Author(s):  
Ben Zhe Sun ◽  
Si Lang Zhou ◽  
Tie Shen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Perovskite Structure ◽  
Volume Fraction ◽  
Partial Substitution ◽  
X Ray Diffraction ◽  
Doping Amount ◽  
X Ray ◽  
Transmission Electron ◽  
Structure And Microstructure

Crystal structure and microstructure of La0.7-xHoxSr0.3MnO3 (x=0.2,0.6) prepared by usual ceramic techniques and grinding procedure were investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). When doping amount x equals to 0.2, incorporation of Ho atoms contributed to phase separation and coexistence of rhombohedral (La0.7Sr0.3MnO3) and hexagonal (HoMnO3) phases. La0.7Sr0.3MnO3 phase is of typical perovskite structure, whereas, HoMnO3 phase is non-perovskite structure. As x reaches 0.6, the volume fraction of HoMnO3 phase was significantly increasing. Meanwhile, an orthorhombic lattice with perovskite structure and space group Pnma can be observed. It prevented from partial substitution of La 3+ or Sr2+ by Ho3+ and the distortion of Mn-O octahedra.

Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
P.A. Stolk ◽  
H.-J. Gossmann ◽  
D.J. Eaglesham ◽  
D.C. Jacobson ◽  
H.S. Luftman ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Solubility Limit ◽  
Solid Solubility Limit ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Defect Clusters ◽  
Transmission Electron ◽  
Junction Formation ◽  
B Doping

AbstractImplanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, we have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of -3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2-2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {311} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of ∼1019/cm3 prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

Identification of calcium oxalate crystals in dried or fixed tobacco leaf

1984 ◽  
Vol 42 ◽  
pp. 288-289
Author(s):  
Vicki L. Baliga ◽  
Mary Ellen Counts
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Calcium Oxalate ◽  
Growth And Development ◽  
Polarized Light ◽  
Calcium Oxalate Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

Calcium is an important element in the growth and development of plants and one form of calcium is calcium oxalate. Calcium oxalate has been found in leaf seed, stem material plant tissue culture, fungi and lichen using one or more of the following methods—polarized light microscopy (PLM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x-ray diffraction.Two methods are presented here for qualitatively estimating calcium oxalate in dried or fixed tobacco (Nicotiana) leaf from different stalk positions using PLM. SEM, coupled with energy dispersive x-ray spectrometry (EDS), and powder x-ray diffraction were used to verify that the crystals observed in the dried leaf with PLM were calcium oxalate.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Devitrification products of rapidly solidified Ni-Nb amorphous alloys.

1990 ◽  
Vol 48 (4) ◽  
pp. 950-951
Author(s):  
G. A. Bertero ◽  
W.H. Hofmeister ◽  
N.D. Evans ◽  
J.E. Wittig ◽  
R.J. Bayuzick
Keyword(s):  
Electron Microscopy ◽  
Amorphous Structure ◽  
Sulphuric Acid Solution ◽  
X Ray Diffraction ◽  
High Fracture ◽  
Transmission Electron ◽  
Xrd Techniques ◽  
Rapidly Solidified ◽  
Electromagnetically Levitated

Rapid solidification of Ni-Nb alloys promotes the formation of amorphous structure. Preliminary results indicate promising elastic properties and high fracture strength for the metallic glass. Knowledge of the thermal stability of the amorphus alloy and the changes in properties with temperature is therefore of prime importance. In this work rapidly solidified Ni-Nb alloys were analyzed with transmission electron microscopy (TEM) during in-situ heating experiments and after isothermal annealing of bulk samples. Differential thermal analysis (DTA), scanning electron microscopy (SEM) and x-ray diffraction (XRD) techniques were also used to characterize both the solidification and devitrification sequences.Samples of Ni-44 at.% Nb were electromagnetically levitated, melted, and rapidly solidified by splatquenching between two copper chill plates. The resulting samples were 100 to 200 μm thick discs of 2 to 3 cm diameter. TEM specimens were either ion-milled or alternatively electropolished in a methanol-10% sulphuric acid solution at 20 V and −40°C.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

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