Redox Active Binary Logic Gate Circuit for Homeland Security

Abstract Binary logic operations are the building blocks of computing machines. In this paper, we present a new programmable binary logic gate based on programmable multistable mechanisms (PMM), which are multistable structures whose stability behavior depends on modifiable boundary conditions as defined and analyzed in our previous work. The logical state of a PMM is defined by its stability and logical operations are implemented by modifying the stability behavior of the mechanism. Our programmable logic device has two qualitatively different sets of inputs. The first set determines the logic function to be computed. The second set represents the logical inputs. The output is a single logical value, “true” if the mechanism changes state and “false” otherwise. In this way, we are able to mechanically implement a set of binary logical operations. This implementation is validated using an analytical model characterizing the qualitative stability behavior of the mechanism. This was further verified using finite element analysis and experimental demonstration.

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Optical three-step binary-logic-gate-based MSD arithmetic

10.1117/12.503869 ◽

2003 ◽

Author(s):

R. S. Fyath ◽

A. A. W. Alsaffar ◽

M. S. Alam

Keyword(s):

Logic Gate ◽

Binary Logic

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Titanium Oxide Memristor Based Digital Encoder Circuit

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.644-650.3430 ◽

2014 ◽

Vol 644-650 ◽

pp. 3430-3433

Author(s):

Yue Wei Hou ◽

Xin Xu ◽

Wei Wang ◽

Xiao Bo Tian ◽

Hai Jun Liu

Keyword(s):

Titanium Oxide ◽

Logic Gate ◽

Logic Circuits ◽

Practical Approach ◽

Nand Gate ◽

Gate Circuit

Memristors have the ability to remember their last resistance and quickly switch between different states, such characteristics could make logic circuits simple in structure and fast in boolean computations. A kind of digital encoder circuit utilizing titanium oxide memristors is proposed. A logic NAND gate which acts as key part in the circuit is designed. The works in this letter also provide a practical approach for designing logic gate circuit with memristors.

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Optical programmable triple-in binary logic gate

Applied Optics ◽

10.1364/ao.31.006200 ◽

1992 ◽

Vol 31 (29) ◽

pp. 6200 ◽

Cited By ~ 7

Author(s):

Zibei Zhang ◽

Liren Liu

Keyword(s):

Logic Gate ◽

Binary Logic

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N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

Chemical Physics Letters ◽

10.1016/j.cplett.2003.07.025 ◽

2003 ◽

Vol 379 (3-4) ◽

pp. 223-229 ◽

Cited By ~ 63

Author(s):

T. Kanbara ◽

K. Shibata ◽

S. Fujiki ◽

Y. Kubozono ◽

S. Kashino ◽

...

Keyword(s):

Thin Films ◽

Field Effect ◽

Field Effect Transistors ◽

Logic Gate ◽

Gate Circuit

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Memristor-Based Logic Gate Circuit

2020 IEEE 3rd International Conference on Computer and Communication Engineering Technology (CCET) ◽

10.1109/ccet50901.2020.9213140 ◽

2020 ◽

Author(s):

Chang Gao ◽

Tong Li ◽

Tiegang Wang ◽

Xinzhou Cao

Keyword(s):

Logic Gate ◽

Gate Circuit

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Fabrication of a logic gate circuit based on ambipolar field-effect transistors with thin films of C60 and pentacene

Chemical Physics Letters ◽

10.1016/j.cplett.2005.07.096 ◽

2005 ◽

Vol 413 (4-6) ◽

pp. 379-383 ◽

Cited By ~ 24

Author(s):

Eiji Kuwahara ◽

Haruka Kusai ◽

Takayuki Nagano ◽

Toshio Takayanagi ◽

Yoshihiro Kubozono

Keyword(s):

Thin Films ◽

Field Effect ◽

Field Effect Transistors ◽

Logic Gate ◽

Gate Circuit

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Design of Gates for Quantum Computation: The NOT Gate

International Journal of Modern Physics B ◽

10.1142/s0217979297001143 ◽

1997 ◽

Vol 11 (18) ◽

pp. 2207-2215

Author(s):

Dima Mozyrsky ◽

Vladimir Privman ◽

Steven P. Hotaling

Keyword(s):

Quantum Logic ◽

Logic Gate ◽

Logic Gates ◽

Time Dependent ◽

Practical Realization ◽

Quantum Logic Gate ◽

Quantum Logic Gates ◽

Gate Circuit ◽

Spatially Extended ◽

Analog Approach

We offer an alternative to the conventional network formulation of quantum computing. We advance the analog approach to quantum logic gate/circuit construction. As an illustration, we consider the spatially extended NOT gate as the first step in the development of this approach. We derive an explicit form of the interaction Hamiltonian corresponding to this gate and analyze its properties. We also discuss general extensions to the case of certain time-dependent interactions which may be useful for practical realization of quantum logic gates.

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GENERAL SPICE MODELS FOR MEMRISTOR AND APPLICATION TO CIRCUIT SIMULATION OF MEMRISTOR-BASED SYNAPSES AND MEMORY CELLS

Journal of Circuits System and Computers ◽

10.1142/s0218126610006141 ◽

2010 ◽

Vol 19 (02) ◽

pp. 407-424 ◽

Cited By ~ 91

Author(s):

MOHAMMAD JAVAD SHARIFI ◽

YASSER MOHAMMADI BANADAKI

Keyword(s):

Nonvolatile Memory ◽

Circuit Simulation ◽

Logic Gate ◽

Memory Cell ◽

Model Parameters ◽

Programmable Logic ◽

Circuit Element ◽

Hewlett Packard ◽

Gate Circuit ◽

First Time

Memristor had been first theorized nearly 40 years ago by Prof. Chua, as the fourth fundamental circuit element beside the three existing elements (Resistor, Capacitor and Inductor) but because no one has succeeded in building a memristor, it has long remained a theoretical element. Some months ago, Hewlett-Packard (hp) announced it created a memristor using a TiO2/TiO2-X structure. In this paper, the characteristics, structures and relations for the invented hp's memristor are briefly reviewed and then two general SPICE models for the charge-controlled and flux-controlled memristors are introduced for the first time. By adjusting the model parameters to the hp's memristor characteristics some circuit properties of the device are studied and then two important memristor applications as the memory cell in a nonvolatile-RAM structure and as the synapse in an artificial neural network are studied. By utilizing the introduced models and designing the appropriate circuits for two most important applications; a nonvolatile memory structure and a programmable logic gate, circuit simulations are done and the results are presented.

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