Memristor-Based Logic Gate Circuit

2020 ◽  
Author(s):  
Chang Gao ◽  
Tong Li ◽  
Tiegang Wang ◽  
Xinzhou Cao
Keyword(s):  
Logic Gate ◽  
Gate Circuit

Redox Active Binary Logic Gate Circuit for Homeland Security

2017 ◽  
Vol 89 (15) ◽  
pp. 7893-7899 ◽  
Author(s):  
Pramod Gaikwad ◽  
Kavita Kadlag ◽  
Manasa Nambiar ◽  
Mruthyunjayachari Chattanahalli Devendrachari ◽  
Shambhulinga Aralekallu ◽  
...  
Keyword(s):  
Homeland Security ◽  
Logic Gate ◽  
Binary Logic ◽  
Redox Active ◽  
Gate Circuit

Titanium Oxide Memristor Based Digital Encoder Circuit

2014 ◽  
Vol 644-650 ◽  
pp. 3430-3433
Author(s):  
Yue Wei Hou ◽  
Xin Xu ◽  
Wei Wang ◽  
Xiao Bo Tian ◽  
Hai Jun Liu
Keyword(s):  
Titanium Oxide ◽  
Logic Gate ◽  
Logic Circuits ◽  
Practical Approach ◽  
Nand Gate ◽  
Gate Circuit

Memristors have the ability to remember their last resistance and quickly switch between different states, such characteristics could make logic circuits simple in structure and fast in boolean computations. A kind of digital encoder circuit utilizing titanium oxide memristors is proposed. A logic NAND gate which acts as key part in the circuit is designed. The works in this letter also provide a practical approach for designing logic gate circuit with memristors.

N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

2003 ◽  
Vol 379 (3-4) ◽  
pp. 223-229 ◽  
Author(s):  
T. Kanbara ◽  
K. Shibata ◽  
S. Fujiki ◽  
Y. Kubozono ◽  
S. Kashino ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Gate ◽  
Gate Circuit

scholarly journals Fabrication of a logic gate circuit based on ambipolar field-effect transistors with thin films of C60 and pentacene

2005 ◽  
Vol 413 (4-6) ◽  
pp. 379-383 ◽  
Author(s):  
Eiji Kuwahara ◽  
Haruka Kusai ◽  
Takayuki Nagano ◽  
Toshio Takayanagi ◽  
Yoshihiro Kubozono
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Gate ◽  
Gate Circuit

scholarly journals Design of Gates for Quantum Computation: The NOT Gate

1997 ◽  
Vol 11 (18) ◽  
pp. 2207-2215
Author(s):  
Dima Mozyrsky ◽  
Vladimir Privman ◽  
Steven P. Hotaling
Keyword(s):  
Quantum Logic ◽  
Logic Gate ◽  
Logic Gates ◽  
Time Dependent ◽  
Practical Realization ◽  
Quantum Logic Gate ◽  
Quantum Logic Gates ◽  
Gate Circuit ◽  
Spatially Extended ◽  
Analog Approach

We offer an alternative to the conventional network formulation of quantum computing. We advance the analog approach to quantum logic gate/circuit construction. As an illustration, we consider the spatially extended NOT gate as the first step in the development of this approach. We derive an explicit form of the interaction Hamiltonian corresponding to this gate and analyze its properties. We also discuss general extensions to the case of certain time-dependent interactions which may be useful for practical realization of quantum logic gates.

GENERAL SPICE MODELS FOR MEMRISTOR AND APPLICATION TO CIRCUIT SIMULATION OF MEMRISTOR-BASED SYNAPSES AND MEMORY CELLS

2010 ◽  
Vol 19 (02) ◽  
pp. 407-424 ◽  
Author(s):  
MOHAMMAD JAVAD SHARIFI ◽  
YASSER MOHAMMADI BANADAKI
Keyword(s):  
Nonvolatile Memory ◽  
Circuit Simulation ◽  
Logic Gate ◽  
Memory Cell ◽  
Model Parameters ◽  
Programmable Logic ◽  
Circuit Element ◽  
Hewlett Packard ◽  
Gate Circuit ◽  
First Time

Memristor had been first theorized nearly 40 years ago by Prof. Chua, as the fourth fundamental circuit element beside the three existing elements (Resistor, Capacitor and Inductor) but because no one has succeeded in building a memristor, it has long remained a theoretical element. Some months ago, Hewlett-Packard (hp) announced it created a memristor using a TiO2/TiO2-X structure. In this paper, the characteristics, structures and relations for the invented hp's memristor are briefly reviewed and then two general SPICE models for the charge-controlled and flux-controlled memristors are introduced for the first time. By adjusting the model parameters to the hp's memristor characteristics some circuit properties of the device are studied and then two important memristor applications as the memory cell in a nonvolatile-RAM structure and as the synapse in an artificial neural network are studied. By utilizing the introduced models and designing the appropriate circuits for two most important applications; a nonvolatile memory structure and a programmable logic gate, circuit simulations are done and the results are presented.

A 1.5 V full-swing BiCMOS dynamic logic gate circuit suitable for VLSI using low-voltage BiCMOS technology

1995 ◽  
Vol 30 (1) ◽  
pp. 73-75 ◽  
Author(s):  
J.B. Kuo ◽  
K.W. Su ◽  
J.H. Lou ◽  
S.S. Chen ◽  
C.S. Chiang
Keyword(s):  
Low Voltage ◽  
Logic Gate ◽  
Dynamic Logic ◽  
Bicmos Technology ◽  
Gate Circuit ◽  
Full Swing

scholarly journals PERANGKAIAN GERBANG LOGIKA DENGAN MENGGUNAKAN MATLAB (SIMULINK)

JURTEKSI ◽  
2019 ◽  
Vol 5 (1) ◽  
pp. 63-70
Author(s):  
Ikhsan Parinduri ◽  
Siti Nurhabibah Hutagalung
Keyword(s):  
Logic Gate ◽  
Truth Table ◽  
Higher Learning ◽  
Digital Systems ◽  
Basic Logic ◽  
Matlab Simulink ◽  
Matlab Program ◽  
Gate Circuit ◽  
Digital Engineering

Abstrack: The logic gate circuit using the simulink method matlab is a series of ways to prove between theories in simulation using the matlab program by entering parameters in the truth table at each logic gate. Parameters in the truth table consist of logic 0 for low and logic 1 for high. The simulation is done by giving input (input) and outpout (output) at each basic logic gate which consists of 7 gates of which are NOT gates, AND, OR, NAND, NOR, X-OR and X-NOR. This proof is intended as a medium to study the logic gate in higher learning learning in digital engineering learning and digital systems. Keywords: Logic Gate, Matlab, Simulink Abstrak: Perangkaian gerbang logika dengan menggunakan matlab metode simulink adalah perangkaian dengan cara pembuktian antara teori pada simulasi menggunakan program matlab dengan memasukkan parameter-paramater yang ada pada tabel kebenaran pada setiap gerbang logika. Paramter-paramater pada tabel kebenaran terdiri atas logika 0 untuk low dan logika 1 untuk high. Simulasi dilakukan dengan memberikan input (masukan) dan outpout (keluaran) pada setiap gerbang logika dasar yang teriri dari 7 gerbang daiantaranya adalah gerbang NOT, AND, OR, NAND, NOR, X-OR dan X-NOR. Pembuktian ini bertujuan sebagai media untuk mempelajari gerbang logika pada pembelajaran diperguruan tinggi pada pembelajaran teknik digital maupun sistem digital.Kata kunci : Gerbang Logika, Matlab, Simulink

The Realization of the 1/2 Blanking in the 4-1/2 Digital Voltmeter Based on ICL7135 Chip

2014 ◽  
Vol 614 ◽  
pp. 249-253
Author(s):  
Guang Yuan Zhu ◽  
Wei Wei Hu ◽  
Yu Feng Sun
Keyword(s):  
Output Signal ◽  
Logic Gate ◽  
Digital Voltmeter ◽  
Program Control ◽  
Single Chip ◽  
Single Chip Microcomputer ◽  
Microcomputer Program ◽  
Gate Circuit

It is necessary to realize the 1/2 blanking when designing the 4-1/2 digital voltmeter based on ICL7135 chip. The traditional digital voltmeter meters achieve the function by using the single-chip microcomputer program control. A new design should be considered when circuits are designed without the single-chip microcomputer. This paper combines the blanking terminal of the CD4511 decoding chip with the output signal of the A/D chip to design a complex logic gate circuit for realizing the blanking function. Experiment has been done to verify that the design of the complex logic gate circuit is feasible and it can guarantee the realization of the 1/2 blanking.

Subnanosecond emitter-coupled logic gate circuit using Isoplanar II

1973 ◽  
Vol 8 (5) ◽  
pp. 368-372 ◽  
Author(s):  
V.A. Dhaka ◽  
J.E. Muschinske ◽  
W.K. Owens
Keyword(s):  
Logic Gate ◽  
Gate Circuit
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