Carbon Incorporation in MOCVD of MoS2 Thin Films Grown from an Organosulfide Precursor

2021 ◽  
Author(s):  
Christian M. Schaefer ◽  
José M. Caicedo Roque ◽  
Guillaume Sauthier ◽  
Jessica Bousquet ◽  
Clément Hébert ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Incorporation

Physical Properties of Thin Films of GaAs and AlxGa1-xAs Grown by Solid-Arsenic-Based MOCVD

2014 ◽  
Vol 976 ◽  
pp. 25-29
Author(s):  
Roberto Castillo-Ojeda ◽  
Joel Diaz-Reyes ◽  
Miguel Galván-Arellano ◽  
Ramon Peña-Sierra
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Low Temperature ◽  
Growth Process ◽  
Carbon Incorporation ◽  
Infrared Measurements ◽  
Hall Effect Measurements ◽  
Low Temperature Photoluminescence

We have studied the optical properties of GaAs and AlxGa1-xAs thin films using low-temperature photoluminescence and Fourier transform infrared spectroscopy. The GaAs and its alloys were grown by MOCVD using solid arsenic instead of arsine, as the arsenic precursor. The gallium and aluminium precursors were trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. Some difficulties for growing AlxGa1-xAs by solid-arsenic-based MOCVD system are the composition homogeneity of the layers and the oxygen and carbon incorporation during the growth process. The composition homogeneity of the films was evaluated by low-temperature photoluminescence. Infrared measurements on the samples allowed the identification of the residual impurities, which are carbon-substitutional, Ga2O3, molecular oxygen, humidity and two unidentified impurities. Samples grown at temperatures lower than 750°C were highly resistive, independently of the ratio V/III used; the samples grown at higher temperatures were n-type, as it was proved by Hall effect measurements.

Microstructure evolution and non-diamond carbon incorporation in CVD diamond thin films grown at low substrate temperatures

1997 ◽  
Vol 172 (3-4) ◽  
pp. 404-415 ◽  
Author(s):  
J. Michler ◽  
J. Stiegler ◽  
Y. von Kaenel ◽  
P. Moeckli ◽  
W. Dorsch ◽  
...  
Keyword(s):  
Thin Films ◽  
Microstructure Evolution ◽  
Cvd Diamond ◽  
Carbon Incorporation ◽  
Diamond Thin Films ◽  
Substrate Temperatures

scholarly journals Deposition of p-type nc-SiC：H thin films with subtle carbon incorporation for applications in p-i-n solar cells

2007 ◽  
Vol 56 (5) ◽  
pp. 2915
Author(s):  
Xu Ying ◽  
Diao Hong-Wei ◽  
Zhang Shi-Bin ◽  
Li Xu-Dong ◽  
Zeng Xiang-Bo ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Carbon Incorporation ◽  
P Type

Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties

2011 ◽  
Vol 99 (15) ◽  
pp. 152902 ◽  
Author(s):  
Apurba Laha ◽  
B. Ai ◽  
P. R. P. Babu ◽  
A. Fissel ◽  
H. J. Osten
Keyword(s):  
Thin Films ◽  
Experimental Study ◽  
Electrical Properties ◽  
Carbon Incorporation

Influence of the H2 Dilution And Filament Temperature on the Properties of P Doped Silicon Carbide Thin Films Produced by Hot-Wire Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Ferreira ◽  
H. Águas ◽  
L. Mendes ◽  
F. Fernandes ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Morphological Data ◽  
Hot Wire ◽  
Carbon Incorporation ◽  
Filament Temperature ◽  
Hydrogen Dilution ◽  
Boron Doped ◽  
Doped Silicon

ABSTRACTThis work deals with the role of hydrogen dilution and filament temperature on the morphology, structure and electrical properties of nanocrystalline boron doped silicon carbide thin films produced by hot-wire technique. The structural and morphological data obtained by XRD, SEM and micro-Raman show that for filament temperatures and hydrogen dilutions above 2100°C and 90%, respectively, the surface morphology of the films is granular with a needle shape, while for lower filament temperatures and hydrogen dilutions the surface morphology gets honeycomb like. The SIMS analysis reveals that films produced with filament temperatures of about 2200°C and hydrogen dilution of 99% present a higher hydrogen and carbon incorporation than the films produced at lower temperatures and hydrogen dilutions. These results agree with the electrical and optical characteristics recorded that show that the films produced exhibit optical gaps in the range from 1.8 to 2 eV and transverse conductivities ranging from 10−1S/cm to 10−3 S/cm, consistent with the degree of films crystallinity and carbon incorporation recorded.

Plasma Diagnostic of a TCDDC System Using a Quadropole Mass Spectrometer

1989 ◽  
Vol 149 ◽  
Author(s):  
M. Vieira ◽  
A. Maçarico ◽  
R. Martins ◽  
I. Ferreira ◽  
L. Guimarāes
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Mass Spectrometric ◽  
Main Reaction ◽  
Spectrometric Analysis ◽  
Plasma Diagnostic ◽  
Plasma Region ◽  
Carbon Incorporation ◽  
Hydrogen Mixtures ◽  
Gas Ratio

ABSTRACTSpecies formed during the decomposition of silane-methane-hydrogen mixtures ([SiH4]x:[CH4]y:[H2]z), by spatial plasma separation technique using the TCDDC (Two Consecutive Decomposition and Deposition Chambre) systeml, are evaluated by mass spectrometric analysis and related with the structural and electro-optical properties for either amorphous (a-) or microcrystalline (μc-) thin films. Results obtained show that in the plasma region, the main reaction is the direct fragmentation of SiH4 by electron impact whilst near the growing surface, the main detected species are excited. The kind of species and their intensity depend strongly on the power density (dp), mixture gas ratio (g = CH4 /SiH4+CH4), static electromagnetic (ξ, B) fields and r.f. frequency (f), used. Since CH4 has a threshold decomposition higher than that one of SiH4, the species presented at the plasma region are, mainly, methyl, dimethyl and CH2-CH2 graphitic-like chains depending, mostly, on dp and on g. By diluting the mixture in H2, we observe the existence of active H2 species that, for high dp, may lead to a transition from the amorphous to microcrystalline phase, as well as a carbon incorporation in the amorphous tissue as graphitic-like bonds. This allow us to infer the merit of the TCDDC system in producing a-/μc-thin films that can be applied to photovoltaic and other applications.

EPR Investigation of Defects in Boron Nitride thin Films

1992 ◽  
Vol 242 ◽  
Author(s):  
M. Fanciulli ◽  
T. D. Moustakas
Keyword(s):  
Thin Films ◽  
Nitrogen Vacancy ◽  
Carbon Doping ◽  
Carbon Incorporation ◽  
Paramagnetic Resonance ◽  
Nitrogen Incorporation ◽  
Argon Discharge ◽  
Epr Signal ◽  
Cubic Structure ◽  
Electron Paramagnetic

ABSTRACTDefects in BN thin films, produced by reactive sputtering, were investigated by Electron Paramagnetic Resonance (EPR) measurements. The EPR signals of films produced with up to 10% N2 in the argon discharge are consistent with films having a cubic structure, and becoming more ordered with nitrogen incorporation in the films. The concentration of spins is in the order of 1019 spins/g and they are attributed to nitrogen vacancies with an electron trapped in. Carbon incorporation changes the EPR signal and increases the concentration of spins significantly. This result is consistent with the notion that carbon doping stabilizes the electron in a nitrogen vacancy.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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