scholarly journals Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance–Voltage Measurement

Nano Letters ◽  
2021 ◽  
Author(s):  
Timothée Lassiaz ◽  
Pierre Tchoulfian ◽  
Fabrice Donatini ◽  
Julien Brochet ◽  
Romain Parize ◽  
...  
Author(s):  
Timothée Lassiaz ◽  
Pierre Tchoulfian ◽  
Fabrice Donatini ◽  
Julien Brochet ◽  
Romain Parize ◽  
...  

Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.


2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
M. R. Balboul ◽  
A. Abdel-Galil ◽  
I. S. Yahia ◽  
A. Sharaf

Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose ofγ-irradiation increases the activation energy of CdS thin film. In addition,γ-irradiation was used to change the sign of Hall coefficient,RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change afterγ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap afterγ-irradiation. Several parameters were also studied such as charge carrier concentration,ND, and flat band potential,Vfb. Theγ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.


2013 ◽  
Vol 103 (3) ◽  
pp. 033512 ◽  
Author(s):  
G. Chen ◽  
A. M. Hoang ◽  
S. Bogdanov ◽  
A. Haddadi ◽  
P. R. Bijjam ◽  
...  

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