Efficient and Facile Electrochemical Process for the Production of High-Quality Lithium Hexafluorophosphate Electrolyte

2020 ◽  
Vol 12 (29) ◽  
pp. 32771-32777
Author(s):  
Along Zhao ◽  
Faping Zhong ◽  
Xiangming Feng ◽  
Weihua Chen ◽  
Xinping Ai ◽  
...  
Keyword(s):  
Electrochemical Process ◽  
High Quality ◽  
Lithium Hexafluorophosphate

ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications

2011 ◽  
Vol 276 ◽  
pp. 3-19 ◽  
Author(s):  
Eugene Chubenko ◽  
Alexey Klyshko ◽  
Vitaly Bondarenko ◽  
Marco Balucani ◽  
Anatoly I. Belous ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electrochemical Deposition ◽  
Electrochemical Process ◽  
Zno Films ◽  
Photovoltaic Devices ◽  
Bulk Silicon ◽  
High Quality ◽  
Hydrothermal Deposition ◽  
Electrochemically Deposited ◽  
Deposition Processes

In present work the investigation of the electrochemical and chemical hydrothermal deposition processes of ZnO on silicon is presented. The influence of the electrochemical process parameters on the characteristics and morphology of the ZnO deposits is analyzed. Electrochemical deposition from non aqueous DMSO solutions on porous silicon buffer layer is also discussed. The details of the chemical hydrothermal deposition from the nitrate bath of high-quality ZnO crystals on silicon substrate are presented. It was shown that morphology and size of synthesized ZnO crystals depends on the temperature of the deposition bath. Differences between photoluminescence of electrochemically deposited ZnO thin films and hydrothermally synthesized crystals are shown. Electrochemically deposited ZnO films demonstrate defect-caused luminescence and hydrothermally grown ZnO crystals shows intensive exciton luminescence band in UV region. Hydrothermal deposition of high-quality ZnO crystals on the surface of electrochemically deposited ZnO seed layer with porous silicon buffer improves photoluminescence properties of the structure which is useful for optoelectronics applications. Possible applications of ZnO as gas sensors and photovoltaic devices are considered. Aspects of ZnO electrochemical deposition on bulk silicon and silicon-on-isolator wafers for integration purposes are discussed.

Growth and Characterization of Polycrystalline Diamond Thin Films on Porous Silicon by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
E. M. Charlson ◽  
T. Stacy ◽  
F. Shahedipour ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electrochemical Process ◽  
Nucleation Density ◽  
High Quality ◽  
Average Grain Size ◽  
Hot Filament

AbstractHot filament chemical vapor deposition (HFCVD) was utilized to grow high quality diamond film on porous silicon (PS) substrates to a thickness of 5–6 μm. Boron-doped silicon substrates of <100> orientation and resistivity of 5–15 ohm-cm were anodized by the electrochemical process to form PS. A slurry of diamond paste (1/4 micron average grain size) was rubbed on the samples for a few seconds before introduction into the chamber. Diamond film growth on the PS has the advantages of shorter incubation time and higher nucleation density as evident from scanning electron microscopy (SEM). The results of X-ray diffraction confirm the growth of predominatly (111) oriented high quality diamond film. Electrical properties were also studied by sputtering circular gold contacts on top of diamond film and measuring current-voltage (I-V) characteristics.

Some problems of objective-prism spectra classification

1966 ◽  
Vol 24 ◽  
pp. 51-52
Author(s):  
E. K. Kharadze ◽  
R. A. Bartaya
Keyword(s):  
Short Wave ◽  
High Quality ◽  
Stellar Spectra ◽  
Objective Prism

The unique 70-cm meniscus-type telescope of the Abastumani Astrophysical Observatory supplied with two objective prisms and the seeing conditions characteristic at Mount Kanobili (Abastumani) permit us to obtain stellar spectra of a high quality. No additional design to improve the “climate” immediately around the telescope itself is being applied. The dispersions and photographic magnitude limits are 160 and 660Å/mm, and 12–13, respectively. The short-wave end of spectra reaches 3500–3400Å.

A non-cyanide method of electropolishing silver

1978 ◽  
Vol 36 (1) ◽  
pp. 146-147
Author(s):  
R. L. Lyles ◽  
S. J. Rothman ◽  
W. Jäger
Keyword(s):  
Electron Microscopy ◽  
Sulphuric Acid ◽  
Methyl Alcohol ◽  
Health Hazards ◽  
Silver Alloy ◽  
High Quality ◽  
Silver Alloys ◽  
Free Sample ◽  
Specimen Quality ◽  
Standard Techniques

Standard techniques of electropolishing silver and silver alloys for electron microscopy in most instances have relied on various CN recipes. These methods have been characteristically unsatisfactory due to difficulties in obtaining large electron transparent areas, reproducible results, adequate solution lifetimes, and contamination free sample surfaces. In addition, there are the inherent health hazards associated with the use of CN solutions. Various attempts to develop noncyanic methods of electropolishing specimens for electron microscopy have not been successful in that the specimen quality problems encountered with the CN solutions have also existed in the previously proposed non-cyanic methods.The technique we describe allows us to jet polish high quality silver and silver alloy microscope specimens with consistant reproducibility and without the use of CN salts.The solution is similar to that suggested by Myschoyaev et al. It consists, in order of mixing, 115ml glacial actic acid (CH3CO2H, specific wt 1.04 g/ml), 43ml sulphuric acid (H2SO4, specific wt. g/ml), 350 ml anhydrous methyl alcohol, and 77 g thiourea (NH2CSNH2).

A High Resolution Scanning Microscope

1968 ◽  
Vol 26 ◽  
pp. 356-357
Author(s):  
A. V. Crewe ◽  
J. Wall ◽  
L. M. Welter
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Spherical Aberration ◽  
Focal Length ◽  
Spot Size ◽  
Emission Source ◽  
Field Of View ◽  
Scanning Microscope ◽  
Magnetic Lens ◽  
High Quality

A scanning microscope using a field emission source has been described elsewhere. This microscope has now been improved by replacing the single magnetic lens with a high quality lens of the type described by Ruska. This lens has a focal length of 1 mm and a spherical aberration coefficient of 0.5 mm. The final spot size, and therefore the microscope resolution, is limited by the aberration of this lens to about 6 Å.The lens has been constructed very carefully, maintaining a tolerance of + 1 μ on all critical surfaces. The gun is prealigned on the lens to form a compact unit. The only mechanical adjustments are those which control the specimen and the tip positions. The microscope can be used in two modes. With the lens off and the gun focused on the specimen, the resolution is 250 Å over an undistorted field of view of 2 mm. With the lens on,the resolution is 20 Å or better over a field of view of 40 microns. The magnification can be accurately varied by attenuating the raster current.

Scanning tunneling microscopy of E. coli RNA polymerase deposited onto an Au substrate by an electrochemical process

1991 ◽  
Vol 49 ◽  
pp. 378-379
Author(s):  
Rebecca W. Keller ◽  
Carlos Bustamante ◽  
David Bear
Keyword(s):  
Scanning Tunneling Microscope ◽  
Biological Sample ◽  
Substrate Surface ◽  
Electrochemical Process ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Tunneling Microscope ◽  
E Coli ◽  
Preparation Techniques

Under ideal conditions, the Scanning Tunneling Microscope (STM) can create atomic resolution images of different kinds of samples. The STM can also be operated in a variety of non-vacuum environments. Because of its potentially high resolution and flexibility of operation, it is now being applied to image biological systems. Several groups have communicated the imaging of double and single stranded DNA.However, reproducibility is still the main problem with most STM results on biological samples. One source of irreproducibility is unreliable sample preparation techniques. Traditional deposition methods used in electron microscopy, such as glow discharge and spreading techniques, do not appear to work with STM. It seems that these techniques do not fix the biological sample strongly enough to the substrate surface. There is now evidence that there are strong forces between the STM tip and the sample and, unless the sample is strongly bound to the surface, it can be swept aside by the tip.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Performance and applications of a field-emission gun TEM/STEM

1992 ◽  
Vol 50 (2) ◽  
pp. 942-943
Author(s):  
Judith M. Brock ◽  
Max T. Otten ◽  
Marc. J.C. de Jong
Keyword(s):  
Field Emission ◽  
High Resolution Imaging ◽  
High Quality ◽  
Small Energy ◽  
High Brightness ◽  
Small Probe ◽  
Resolution Imaging ◽  
Convergent Beam ◽  
Beam Patterns ◽  
Beam Diffraction

A Field Emission Gun (FEG) on a TEM/STEM instrument provides a major improvement in performance relative to one equipped with a LaB6 emitter. The improvement is particularly notable for small-probe techniques: EDX and EELS microanalysis, convergent beam diffraction and scanning. The high brightness of the FEG (108 to 109 A/cm2srad), compared with that of LaB6 (∼106), makes it possible to achieve high probe currents (∼1 nA) in probes of about 1 nm, whilst the currents for similar probes with LaB6 are about 100 to 500x lower. Accordingly the small, high-intensity FEG probes make it possible, e.g., to analyse precipitates and monolayer amounts of segregation on grain boundaries in metals or ceramics (Fig. 1); obtain high-quality convergent beam patterns from heavily dislocated materials; reliably detect 1 nm immuno-gold labels in biological specimens; and perform EDX mapping at nm-scale resolution even in difficult specimens like biological tissue.The high brightness and small energy spread of the FEG also bring an advantage in high-resolution imaging by significantly improving both spatial and temporal coherence.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

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