Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors

Author(s):  
Yujin Lee ◽  
Taewook Nam ◽  
Seunggi Seo ◽  
Hwi Yoon ◽  
Il-Kwon Oh ◽  
...  

2021 ◽  
pp. 160053
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Hyunjae Jang ◽  
Changyong Oh ◽  
Tae Hyun Kim ◽  
Hyeong Wook Kim ◽  
Sang Ik Lee ◽  
...  




2021 ◽  
Vol 52 (S2) ◽  
pp. 141-141
Author(s):  
Dedong Han ◽  
Huijin Li ◽  
Junchen Dong ◽  
Xiaobin Zhou ◽  
Qi Li ◽  
...  




2021 ◽  
Vol 52 (S2) ◽  
pp. 472-476
Author(s):  
Qi Li ◽  
Huijin Li ◽  
Junchen Dong ◽  
Jingyi Wang ◽  
Dedong Han ◽  
...  


2021 ◽  
Vol 52 (S2) ◽  
pp. 696-698
Author(s):  
Jingyi Wang ◽  
Junchen Dong ◽  
Qi Li ◽  
Dengqin Xu ◽  
Yi Wang ◽  
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RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.



2019 ◽  
Vol 50 (1) ◽  
pp. 1317-1320
Author(s):  
Huijin Li ◽  
Junchen Dong ◽  
Dedong Han ◽  
Wen Yu ◽  
Zhuang Yi ◽  
...  


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