scholarly journals Ultrasensitive negative capacitance phototransistors

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Luqi Tu ◽  
Rongrong Cao ◽  
Xudong Wang ◽  
Yan Chen ◽  
Shuaiqin Wu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Gate Dielectric ◽  
Negative Capacitance ◽  
Subthreshold Slope ◽  
Electrical And Optical Properties ◽  
Promising Candidate ◽  
Combined Action ◽  
Zirconium Oxide Film ◽  
Dark Currents ◽  
Steep Subthreshold Slope

AbstractSensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused on complex hybrid systems in which leakage paths and dark currents inevitably increase, thereby reducing the photodetectivity. Here, we report an ultrasensitive negative capacitance (NC) MoS2 phototransistor with a layer of ferroelectric hafnium zirconium oxide film in the gate dielectric stack. The prototype photodetectors demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and ultrahigh photodetectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature. The enhanced performance benefits from the combined action of the strong photogating effect induced by ferroelectric local electrostatic field and the voltage amplification based on ferroelectric NC effect. These results address the key challenges for MoS2 photodetectors and offer inspiration for the development of other optoelectronic devices.

scholarly journals Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors

2018 ◽  
Vol 65 (1) ◽  
pp. 10 ◽  
Author(s):  
Miguel Angel Dominguez Jimenez ◽  
Jose Pau ◽  
Ovier Obregon ◽  
Anayantzi Luna ◽  
Andres Redondo
Keyword(s):  
Room Temperature ◽  
Gate Dielectric ◽  
High Mobility ◽  
Subthreshold Slope ◽  
Current Ratio ◽  
Mos Capacitors ◽  
Dielectric Characteristics ◽  
Zinc Nitride ◽  
Capacitance Voltage

In this work, high mobility TFTs based on zinc nitride (Zn3N2) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn3N2 TFTs. The devices exhibit an on/off-current ratio of 106 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm2/Vs which is among the highest reported for Zn3N2 TFTs. In addition, n-type MOS capacitors were fabricated and characterized by capacitance – voltage and capacitance – frequency measurements to evaluate the dielectric characteristics of the SOG film.      

scholarly journals Positive non-linear capacitance: the origin of the steep subthreshold-slope in ferroelectric FETs

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Md Nur K. Alam ◽  
P. Roussel ◽  
M. Heyns ◽  
J. Van Houdt
Keyword(s):  
Maxwell Equations ◽  
Experimental Validation ◽  
Negative Capacitance ◽  
Subthreshold Slope ◽  
Non Linear ◽  
Shape Curve ◽  
Steep Subthreshold Slope

Abstract We show that the non-linear positive capacitance (PC) of ferroelectrics (FE) can explain the steep subthreshold-slope (SS) observed in FE based MOSFETs and often attributed to the existence of a negative capacitance in FE capacitors. Physically attainable and unattainable regions of the S-shape curve used in the negative capacitance theory are investigated by self-consistently solving Landau-Khalatnikov and Maxwell equations and by experimental validation. Finally, the conditions for attaining a steep SS in FE based MOSFETs assuming only positive capacitances are discussed.

scholarly journals Polymorphic gallium for active resonance tuning in photonic nanostructures: from bulk gallium to two-dimensional (2D) gallenene

Nanophotonics ◽  
2020 ◽  
Vol 9 (14) ◽  
pp. 4233-4252
Author(s):  
Yael Gutiérrez ◽  
Pablo García-Fernández ◽  
Javier Junquera ◽  
April S. Brown ◽  
Fernando Moreno ◽  
...  
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Phase Change Materials ◽  
Two Dimensional ◽  
Active Materials ◽  
Promising Candidate ◽  
Plasmonic Structures ◽  
Resonance Tuning ◽  
The Many ◽  
Optical Behavior

AbstractReconfigurable plasmonics is driving an extensive quest for active materials that can support a controllable modulation of their optical properties for dynamically tunable plasmonic structures. Here, polymorphic gallium (Ga) is demonstrated to be a very promising candidate for adaptive plasmonics and reconfigurable photonics applications. The Ga sp-metal is widely known as a liquid metal at room temperature. In addition to the many other compelling attributes of nanostructured Ga, including minimal oxidation and biocompatibility, its six phases have varying degrees of metallic character, providing a wide gamut of electrical conductivity and optical behavior tunability. Here, the dielectric function of the several Ga phases is introduced and correlated with their respective electronic structures. The key conditions for optimal optical modulation and switching for each Ga phase are evaluated. Additionally, we provide a comparison of Ga with other more common phase-change materials, showing better performance of Ga at optical frequencies. Furthermore, we first report, to the best of our knowledge, the optical properties of liquid Ga in the terahertz (THz) range showing its broad plasmonic tunability from ultraviolet to visible-infrared and down to the THz regime. Finally, we provide both computational and experimental evidence of extension of Ga polymorphism to bidimensional two-dimensional (2D) gallenene, paving the way to new bidimensional reconfigurable plasmonic platforms.

scholarly journals Recyclable Self-Healing Polyurethane Cross-Linked by Alkyl Diselenide with Enhanced Mechanical Properties

Polymers ◽  
2019 ◽  
Vol 11 (5) ◽  
pp. 773 ◽  
Author(s):  
Yuqing Qian ◽  
Xiaowei An ◽  
Xiaofei Huang ◽  
Xiangqiang Pan ◽  
Jian Zhu ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Room Temperature ◽  
Amide Bond ◽  
Self Healing ◽  
Healing Efficiency ◽  
Polyurethane Networks ◽  
Combined Action ◽  
Cross Linker ◽  
Dynamic Structures ◽  
External Interventions

Dynamic structures containing polymers can behave as thermosets at room temperature while maintaining good mechanical properties, showing good reprocessability, repairability, and recyclability. In this work, alkyl diselenide is effectively used as a dynamic cross-linker for the design of self-healing poly(urea–urethane) elastomers, which show quantitative healing efficiency at room temperature, without the need for any catalysts or external interventions. Due to the combined action of the urea bond and amide bond, the material has better mechanical properties. We also compared the self-healing effect of alkyl diselenide-based polyurethanes and alkyl disulfide-based polyurethanes. The alkyl diselenide has been incorporated into polyurethane networks using a para-substituted amine diphenyl alkyl diselenide. The resulting materials not only exhibit faster self-healing properties than the corresponding disulfide-based materials, but also show the ability to be processed at temperatures as low as 60 °C.

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