scholarly journals Two dimensional allotropes of arsenene with a wide range of high and anisotropic carrier mobility

2018 ◽  
Vol 20 (47) ◽  
pp. 29939-29950 ◽  
Author(s):  
Pooja Jamdagni ◽  
Anil Thakur ◽  
Ashok Kumar ◽  
P. K. Ahluwalia ◽  
Ravindra Pandey

Considering the rapid development of experimental techniques for fabricating 2D materials in recent years, various monolayers are expected to be experimentally realized in the near future.

Author(s):  
Kai Ren ◽  
Huabing Shu ◽  
Wenyi Huo ◽  
Zhen Cui ◽  
Jin Yu ◽  
...  

Two-dimensional (2D) materials with moderate bandgap and high carrier mobility are decent for the applications in the optoelectronics. In this work, we present a systematically investigation of the mechanical, electronic...


2021 ◽  
Author(s):  
Mubashir A. Kharadi ◽  
Gul Faroz A. Malik ◽  
Farooq A. Khanday

2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and layer-dependent bandgaps. Different 2D materials stacked together give rise to many surprising electronic and optoelectronic phenomena of the junctions based on 2D materials. This has resulted in a lot of popularity of 2D heterostructures as compared to the original 2D materials. This chapter presents the progress of optoelectronic devices (photodetectors) based on 2D materials and their heterostructures.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Arne Quellmalz ◽  
Xiaojing Wang ◽  
Simon Sawallich ◽  
Burkay Uzlu ◽  
Martin Otto ◽  
...  

AbstractIntegrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to $$4520\;{\mathrm{cm}}^2{\mathrm{V}}^{ - 1}{\mathrm{s}}^{ - 1}$$ 4520 cm 2 V − 1 s − 1 . Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing.


Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2147-2168 ◽  
Author(s):  
Wei Gao ◽  
Zhaoqiang Zheng ◽  
Peiting Wen ◽  
Nengjie Huo ◽  
Jingbo Li

AbstractTwo-dimensional (2D) materials have undergone a rapid development toward real applications since the discovery of graphene. At first, graphene is a star material because of the ultrahigh mobility and novel physics, but it always suffered from zero bandgap and limited device application. Then, 2D binary compounds such as transition-metal chalcogenides emerged as complementary materials for graphene due to their sizable bandgap and moderate electrical properties. Recently, research interests have turned to monoelemental and ternary 2D materials. Among them, monoelemental 2D materials such as arsenic (As), antimony (Sb), bismuth (Bi), tellurium (Te), etc., have been the focus. For example, bismuthene can act as a 2D topological insulator with nontrivial topological edge states and high bulk gap, providing the novel platforms to realize the quantum spin-Hall systems. Meanwhile, ternary 2D materials such as Bi2O2Se, BiOX and CrOX (X=Cl, Br, I) have also emerged as promising candidates in optoelectronics and spintronics due to their extraordinary mobility, favorable band structures and intrinsic ferromagnetism with high Curie temperature. In this review, we will discuss the recent works and future prospects on the emerging monoelemental and ternary materials in terms of their structure, growth, physics and device applications.


Nanoscale ◽  
2018 ◽  
Vol 10 (43) ◽  
pp. 20226-20233 ◽  
Author(s):  
Meng-han Zhang ◽  
Chang-wen Zhang ◽  
Pei-ji Wang ◽  
Sheng-shi Li

A great obstacle for the practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable two-dimensional (2D) materials with a sizable nontrivial band gap, high Curie temperature, and high carrier mobility.


Author(s):  
Hemanth N R ◽  
Taekyung Kim ◽  
Byeongyoon Kim ◽  
Arvind H. Jadhav ◽  
Kwangyeol Lee ◽  
...  

Various two-dimensional (2D) materials have demonstrated unique structure-dependent characteristics that are conducive to energy-harvesting applications. Among them, the family of layered MXenes has found a wide range of applications in...


2021 ◽  
Author(s):  
Shihao Su ◽  
Xinwei Wang ◽  
Jianming Xue

Two-dimensional (2D) materials such as graphene and molybdenum disulfide have been demonstrated with a wide range of applications in electronic devices, chemical catalysis, single-molecule detection, and energy conversion. In the...


Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5213
Author(s):  
Oliver Dubnack ◽  
Frank A. Müller

The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.


2020 ◽  
Vol 7 (4) ◽  
pp. 200214
Author(s):  
Shakir Bin Mujib ◽  
Santanu Mukherjee ◽  
Zhongkan Ren ◽  
Gurpreet Singh

Two-dimensional (2D) materials have elicited considerable interest in the past decade due to a diverse array of novel properties ranging from high surface to mass ratios, a wide range of band gaps (insulating boron nitride (BN) to semiconducting transition metal dichalcogenides), high mechanical strength and chemical stability. Given the superior chemo-thermo-mechanical properties, 2D materials may provide transformative solution to a familiar yet persistent problem of significant socio-economic burden: the corrosion of stainless steel (SS). With this broader perspective, we investigate corrosion resistance properties of SS-coated with 2D nanomaterials; molybdenum disulfide (MoS 2 ), BN, bulk graphite in 3.5 wt% aqueous NaCl solution. The nanosheets were prepared by a novel liquid phase exfoliation technique and the coatings were made by a paint brush to achieve uniformity. Open circuit potential (OCP) and potentiodynamic plots indicate the best corrosion resistance is provided by the MoS 2 coatings. Superior performance of the coating is attributed to low electronic conductivity, large flake size and uniform coverage of SS substrate, which probably impeded the corrosive ions from the solution from diffusing through the coating.


Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1717-1742
Author(s):  
Xiao-Guang Gao ◽  
Xiao-Kuan Li ◽  
Wei Xin ◽  
Xu-Dong Chen ◽  
Zhi-Bo Liu ◽  
...  

AbstractTwo-dimensional (2D) materials such as graphene, black phosphorus, and transition metal dichalcogenides have attracted significant research attention due to their novel properties and wide range of applications in electronic and optoelectronic devices. In particular, investigation of twist-controlled 2D materials has attracted tremendous attention due to their excellent properties such as smooth heterointerfaces, highly gate-tunable bandgaps, and ultrafast carrier transport. Twist-controlled 2D materials combined with their fascinating electronic structures have also indicated their outstanding potential in electronic and optoelectronic applications. In this review, the recent developments in twisted 2D materials are summarized, covering aspects related to their fabrication, twist angle-dependent optical properties, and optoelectronic applications. The photodetectors and orientation-dependent van der Waals junctions are introduced and discussed systematically. Finally, we deliver a summary and outlook to provide a guideline for the future development of this rapidly growing field.


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