scholarly journals Controllable deposition of organic metal halide perovskite films with wafer-scale uniformity by single source flash evaporation

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Woocheol Lee ◽  
Jonghoon Lee ◽  
Hyeon-Dong Lee ◽  
Junwoo Kim ◽  
Heebeom Ahn ◽  
...  
Keyword(s):  
Large Scale ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Scale Production ◽  
Single Source ◽  
Flash Evaporation ◽  
Large Area ◽  
Lead Iodide ◽  
Wafer Scale ◽  
Evaporation Technique

Abstract Conventional solution-processing techniques such as the spin-coating method have been used successfully to reveal excellent properties of organic–inorganic halide perovskites (OHPs) for optoelectronic devices such as solar cell and light-emitting diode, but it is essential to explore other deposition techniques compatible with large-scale production. Single-source flash evaporation technique, in which a single source of materials of interest is rapidly heated to be deposited in a few seconds, is one of the candidate techniques for large-scale thin film deposition of OHPs. In this work, we investigated the reliability and controllability of the single-source flash evaporation technique for methylammonium lead iodide (MAPbI3) perovskite. In-depth statistical analysis was employed to demonstrate that the MAPbI3 films prepared via the flash evaporation have an ultrasmooth surface and uniform thickness throughout the 4-inch wafer scale. We also show that the thickness and grain size of the MAPbI3 film can be controlled by adjusting the amount of the source and number of deposition steps. Finally, the excellent large-area uniformity of the physical properties of the deposited thin films can be transferred to the uniformity in the device performance of MAPbI3 photodetectors prepared by flash evaporation which exhibited the responsivity of 0.2 A/W and detectivity of 3.82 × 1011 Jones.

Organic semiconductors for device applications: current trends and future prospects

2014 ◽  
Vol 34 (4) ◽  
pp. 279-338 ◽  
Author(s):  
Shamim Ahmad
Keyword(s):  
Organic Semiconductors ◽  
Flexible Electronics ◽  
Large Scale ◽  
New Technologies ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Scale Production ◽  
Carrier Injection ◽  
Large Area ◽  
Device Applications

Abstract With the rich experience of developing silicon devices over a period of the last six decades, it is easy to assess the suitability of a new material for device applications by examining charge carrier injection, transport, and extraction across a practically realizable architecture; surface passivation; and packaging and reliability issues besides the feasibility of preparing mechanically robust wafer/substrate of single-crystal or polycrystalline/amorphous thin films. For material preparation, parameters such as purification of constituent materials, crystal growth, and thin-film deposition with minimum defects/disorders are equally important. Further, it is relevant to know whether conventional semiconductor processes, already known, would be useable directly or would require completely new technologies. Having found a likely candidate after such a screening, it would be necessary to identify a specific area of application against an existing list of materials available with special reference to cost reduction considerations in large-scale production. Various families of organic semiconductors are reviewed here, especially with the objective of using them in niche areas of large-area electronic displays, flexible organic electronics, and organic photovoltaic solar cells. While doing so, it appears feasible to improve mobility and stability by adjusting π-conjugation and modifying the energy band-gap. Higher conductivity nanocomposites, formed by blending with chemically conjugated C-allotropes and metal nanoparticles, open exciting methods of designing flexible contact/interconnects for organic and flexible electronics as can be seen from the discussion included here.

scholarly journals OLED Fabrication by Using a Novel Planar Evaporation Technique

2014 ◽  
Vol 2014 ◽  
pp. 1-8
Author(s):  
Fu-Ching Tung ◽  
Yi-Shan Wang ◽  
Shih-Hsiang Lai ◽  
Chien-Chih Chen ◽  
Szu-Hao Chen ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Single Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Utilization Rate ◽  
Large Area ◽  
Composition Control ◽  
Organic Light Emitting Diode ◽  
Evaporation Technique ◽  
Material Utilization

Organic light-emitting diode fabrication is suffering from extremely high material wasting during deposition especially using a typical point or even line source. Moreover, the need of depositing a high number of emitters and host(s) with a precise composition control in a single layer makes traditional vapor codeposition systems nearly impossible, unless otherwise with a very low yield. To improve, we have developed a novel thin-film deposition system with a planar source loadable with any premetered solvent-mixed organic compounds, plausibly with no component number limitation. We hence demonstrate experimentally, along with a Monte Carlo simulation, in the report the feasibility of using the technique to deposit on a large area-size substrate various organic materials with a relatively high material utilization rate coupling with high film uniformity. Specifically, nonuniformity of less than ±5% and material utilization rate of greater than 70% have been obtained for the studied films.

scholarly journals Mechanical transfer of electrochemically grown molybdenum sulfide layers to silicon wafer

2021 ◽  
Author(s):  
Talha Nisar ◽  
Torsten Balster ◽  
Veit Wagner
Keyword(s):  
Thin Films ◽  
Large Scale ◽  
Thin Film Deposition ◽  
Molybdenum Sulfide ◽  
Film Deposition ◽  
Large Area ◽  
Post Annealing ◽  
Precursor Material ◽  
Coated Film ◽  
Underlying Substrate

Abstract Large area MoS2 ultra-thin film deposition is one of the big challenges in the recent years. Electrodeposition provides an opportunity to grow such ultra-thin films on large scale. However, the transfer of the electrochemically grown film is challenging. Standard transfer of those thin films is done by wet etching in which the underlying substrate is etched. In this work, the polymer coated electrodeposited MoS2 films on Au are separated mechanically from the underlying substrate by using ultra-sonication. Collapse of micron-sized bubbles produced by ultra-sonication at the interface of Au and silicon substrate provides enough energy for separation due to their weak adhesion. The Au layer is then removed by standard Au-etchant (K/KI) and the polymer coated film is transferred to a desired substrate. Ammonium tetrathiomolybdate (ATTM) has been used as precursor material for the electrodeposition of the films. Initial electrochemically grown films consist of MoS3 which is reduced to MoS2 by a post-annealing step at 450–900 °C. Obtained films are investigated by AFM, Raman, UV–Vis and XPS. Crystal quality improves by increasing the post-annealing temperature. The thickness of the thinnest film was found to be equivalent to 2 monolayers of MoS2, which is desirable for future electronics. Graphic abstract

scholarly journals Author Correction: Controllable deposition of organic metal halide perovskite films with wafer-scale uniformity by single source flash evaporation

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Woocheol Lee ◽  
Jonghoon Lee ◽  
Hyeon-Dong Lee ◽  
Junwoo Kim ◽  
Heebeom Ahn ◽  
...  
Keyword(s):  
Metal Halide ◽  
Single Source ◽  
Organic Metal ◽  
Flash Evaporation ◽  
Wafer Scale ◽  
Metal Halide Perovskite ◽  
Halide Perovskite

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

scholarly journals Efficient and large-area all vacuum-deposited perovskite light-emitting diodes via spatial confinement

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Peipei Du ◽  
Jinghui Li ◽  
Liang Wang ◽  
Liang Sun ◽  
Xi Wang ◽  
...  
Keyword(s):  
High Resolution ◽  
Large Scale ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Scale Production ◽  
Nonradiative Recombination ◽  
Large Area ◽  
Spatial Confinement ◽  
Light Emitting ◽  
Large Scale Production

AbstractWith rapid advances of perovskite light-emitting diodes (PeLEDs), the large-scale fabrication of patterned PeLEDs towards display panels is of increasing importance. However, most state-of-the-art PeLEDs are fabricated by solution-processed techniques, which are difficult to simultaneously achieve high-resolution pixels and large-scale production. To this end, we construct efficient CsPbBr3 PeLEDs employing a vacuum deposition technique, which has been demonstrated as the most successful route for commercial organic LED displays. By carefully controlling the strength of the spatial confinement in CsPbBr3 film, its radiative recombination is greatly enhanced while the nonradiative recombination is suppressed. As a result, the external quantum efficiency (EQE) of thermally evaporated PeLED reaches 8.0%, a record for vacuum processed PeLEDs. Benefitting from the excellent uniformity and scalability of the thermal evaporation, we demonstrate PeLED with a functional area up to 40.2 cm2 and a peak EQE of 7.1%, representing one of the most efficient large-area PeLEDs. We further achieve high-resolution patterned perovskite film with 100 μm pixels using fine metal masks, laying the foundation for potential display applications. We believe the strategy of confinement strength regulation in thermally evaporated perovskites provides an effective way to process high-efficiency and large-area PeLEDs towards commercial display panels.

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

scholarly journals Formation of a single quasicrystal upon collision of multiple grains

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Insung Han ◽  
Kelly L. Wang ◽  
Andrew T. Cadotte ◽  
Zhucong Xi ◽  
Hadi Parsamehr ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Large Scale ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Decagonal Quasicrystal ◽  
Bulk Crystal Growth ◽  
Computational Discovery ◽  
Dynamics Simulations ◽  
Novel Applications ◽  
Small Misorientation

AbstractQuasicrystals exhibit long-range order but lack translational symmetry. When grown as single crystals, they possess distinctive and unusual properties owing to the absence of grain boundaries. Unfortunately, conventional methods such as bulk crystal growth or thin film deposition only allow us to synthesize either polycrystalline quasicrystals or quasicrystals that are at most a few centimeters in size. Here, we reveal through real-time and 3D imaging the formation of a single decagonal quasicrystal arising from a hard collision between multiple growing quasicrystals in an Al-Co-Ni liquid. Through corresponding molecular dynamics simulations, we examine the underlying kinetics of quasicrystal coalescence and investigate the effects of initial misorientation between the growing quasicrystalline grains on the formation of grain boundaries. At small misorientation, coalescence occurs following rigid rotation that is facilitated by phasons. Our joint experimental-computational discovery paves the way toward fabrication of single, large-scale quasicrystals for novel applications.

Chimney-Shaped and Plateau-Shaped Gate Electrode Field Emission Arrays

1998 ◽  
Vol 509 ◽  
Author(s):  
F. G. Tarntair ◽  
C. C. Wang ◽  
W. K. Hong ◽  
H. K. Huang ◽  
H. C. Cheng
Keyword(s):  
Thin Film Deposition ◽  
Film Deposition ◽  
Uniform Structure ◽  
Flat Panel Display ◽  
Gate Electrode ◽  
Large Area ◽  
Flat Panel ◽  
Field Emitter Arrays ◽  
The Matrix ◽  
Field Emission Arrays

AbstractA triode structure of chimney-shaped field emitter arrays is proposed in this article. This triode structure includes the chimney-shaped emitter, thermal oxidation dioxide, and the plateau-shaped singlecrystalline silicon gate electrode. For the application of the matrix-addressable and large area flat panel display, the uniform structure of the emitters and the yield become critical manufacturing issues when attempting to control nano-meter size features. The uniformity and yield of the chimney-shaped emitters are very well controlled. The nano-sized gate-to-emitter separations can be created by the changing thickness of the insulator. The uniformity of the insulator and emitter material can be controlled within 3% which can be obtained by most large area thin film deposition tools, not by photolithography.

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