scholarly journals Localized UV emitters on the surface of β-Ga2O3

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jesse Huso ◽  
Matthew D. McCluskey ◽  
Yinchuan Yu ◽  
Md Minhazul Islam ◽  
Farida Selim
Keyword(s):  
Single Crystal ◽  
Gallium Oxide ◽  
Surface Defects ◽  
Light Emission ◽  
Active Material ◽  
Wide Bandgap ◽  
Structural Imaging ◽  
Band Edge Luminescence ◽  
Pl Emission ◽  
Uv Emitters

AbstractMonoclinic gallium oxide (β-Ga2O3) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n-type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga2O3 has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices.

Influence of diamond wire saw slicing parameters on (010) lattice plane beta-gallium oxide single crystal wafer

2021 ◽  
Vol 133 ◽  
pp. 105939
Author(s):  
Pengcheng Gao ◽  
Baimei Tan ◽  
Fan Yang ◽  
Hui Li ◽  
Na Bian ◽  
...  
Keyword(s):  
Single Crystal ◽  
Gallium Oxide ◽  
Lattice Plane ◽  
Diamond Wire ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Crystal Wafer

scholarly journals Light Emission by Nanoporous GaN Produced by a Top-Down, Nonlithographical Nanopatterning

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
E. Kheirandish ◽  
N. A. Kouklin ◽  
J. Liang
Keyword(s):  
Light Emission ◽  
Electronic Devices ◽  
Emission Spectra ◽  
Temperature Dependent ◽  
Physical Mechanisms ◽  
Spectral Shifts ◽  
Nanopore Arrays ◽  
Bulk Gan ◽  
Pl Emission ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence (PL) spectroscopy is carried out to probe radiative recombination and related light emission processes in two-dimensional periodic close-packed nanopore arrays in gallium nitride (np-GaN). The arrays were produced by nonlithographic nanopatterning of wurtzite GaN followed by a dry etching. The results of Raman spectroscopy point to a small relaxation of the compressive stress of ~0.24 GPa in nanoporous vs. bulk GaN. At ~300 K, the PL emission is induced by excitons and not free-carrier interband radiative recombinations. An evolution of the emission spectra with T is confirmed to be mainly a result of a decay of nonexcitonic PL emission and less of spectral shifts of the underlying PL bands. A switching of excitonic PL regime observed experimentally was analyzed within the exciton recombination-generation framework. The study provides new insights into the behaviors and physical mechanisms regulating light emission processes in np-GaN, critical to the development of nano-opto-electronic devices based on mesoscopic GaN.

A theoretical model describing the light emission efficiency of single-crystal scintillators in the diagnostic energy range

2009 ◽  
Vol 4 (06) ◽  
pp. P06016-P06016 ◽  
Author(s):  
A Petropoulou ◽  
N Kalyvas ◽  
I Kandarakis ◽  
I Valais ◽  
G S Panayiotakis
Keyword(s):  
Theoretical Model ◽  
Energy Range ◽  
Single Crystal ◽  
Light Emission ◽  
Emission Efficiency

scholarly journals Light-emitting Ga-oxide nanocrystals in glass: a new paradigm for low-cost and robust UV-to-visible solar-blind converters and UV emitters

Nanoscale ◽  
2014 ◽  
Vol 6 (3) ◽  
pp. 1763-1774 ◽  
Author(s):  
Vladimir N. Sigaev ◽  
Nikita V. Golubev ◽  
Elena S. Ignat'eva ◽  
Alberto Paleari ◽  
Roberto Lorenzi
Keyword(s):  
Light Emission ◽  
Low Cost ◽  
New Paradigm ◽  
Light Emitting ◽  
Solar Blind ◽  
Donor Acceptor ◽  
Uv Emitters ◽  
Kinetics Of

We demonstrate that nano-confinement of donor–acceptor recombination can force a nanophase to follow efficient bimolecular kinetics of light-emission, allowing Ga2O3 nanocrystals to work in glass as unprecedented solar-blind UV-to-visible converters.

scholarly journals In situ inorganic conductive network formation in high-voltage single-crystal Ni-rich cathodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xinming Fan ◽  
Xing Ou ◽  
Wengao Zhao ◽  
Yun Liu ◽  
Bao Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Network Formation ◽  
Nickel Content ◽  
Active Material ◽  
Rate Capability ◽  
Lithium Ion ◽  
Conductive Network ◽  
Mechanical Instability ◽  
Metal Anode

AbstractHigh nickel content in LiNixCoyMnzO2 (NCM, x ≥ 0.8, x + y + z = 1) layered cathode material allows high specific energy density in lithium-ion batteries (LIBs). However, Ni-rich NCM cathodes suffer from performance degradation, mechanical and structural instability upon prolonged cell cycling. Although the use of single-crystal Ni-rich NCM can mitigate these drawbacks, the ion-diffusion in large single-crystal particles hamper its rate capability. Herein, we report a strategy to construct an in situ Li1.4Y0.4Ti1.6(PO4)3 (LYTP) ion/electron conductive network which interconnects single-crystal LiNi0.88Co0.09Mn0.03O2 (SC-NCM88) particles. The LYTP network facilitates the lithium-ion transport between SC-NCM88 particles, mitigates mechanical instability and prevents detrimental crystalline phase transformation. When used in combination with a Li metal anode, the LYTP-containing SC-NCM88-based cathode enables a coin cell capacity of 130 mAh g−1 after 500 cycles at 5 C rate in the 2.75-4.4 V range at 25 °C. Tests in Li-ion pouch cell configuration (i.e., graphite used as negative electrode active material) demonstrate capacity retention of 85% after 1000 cycles at 0.5 C in the 2.75-4.4 V range at 25 °C for the LYTP-containing SC-NCM88-based positive electrode.

scholarly journals Comparative Study of Growth Morphologies of Ga2O3 Nanowires on Different Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1920
Author(s):  
Badriyah Alhalaili ◽  
Ruxandra Vidu ◽  
Howard Mao ◽  
M. Saif Islam
Keyword(s):  
Gallium Oxide ◽  
Catalyst Layer ◽  
Wide Bandgap ◽  
Nanowire Growth ◽  
Si Substrate ◽  
Wide Bandgap Semiconductor ◽  
Si Substrates ◽  
Silver Catalysts ◽  
Elemental Characterization

Gallium oxide (Ga2O3) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of Ga2O3 nanostructures on different substrates and temperatures. We used silver catalysts to enhance the growth of Ga2O3 nanowires on substrates such as p-Si substrate doped with boron, 250 nm SiO2 on n-Si, 250 nm Si3N4 on p-Si, quartz, and n-Si substrates by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of liquid silver paste that served as a catalyst layer. We present the results of the morphological, structural, and elemental characterization of the Ga2O3 nanostructures. This work offers in-depth explanation of the dense, thin, and long Ga2O3 nanowire growth directly on the surfaces of various types of substrates using silver catalysts.

Strong hydrogen bonding wide bandgap single crystal for optical and electronic applications

2019 ◽  
Vol 120 ◽  
pp. 105710 ◽  
Author(s):  
I.P. Bincy ◽  
S.N. Jaisankar ◽  
M.P. Pachamuthu ◽  
D. Santhanaraj ◽  
D. Prakash ◽  
...  
Keyword(s):  
Hydrogen Bonding ◽  
Single Crystal ◽  
Wide Bandgap
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