scholarly journals UV induced resistive switching in hybrid polymer metal oxide memristors

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Spyros Stathopoulos ◽  
Ioulia Tzouvadaki ◽  
Themis Prodromakis
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Programming Approach ◽  
Proof Of Concept ◽  
Memristive Device ◽  
Uv Illumination ◽  
Polymer Metal ◽  
Additional Stimulation

AbstractThere is an increasing interest for alternative ways to program memristive devices to arbitrary resistive levels. Among them, light-controlled programming approach, where optical input is used to improve or to promote the resistive switching, has drawn particular attention. Here, we present a straight-forward method to induce resistive switching to a memristive device, introducing a new version of a metal-oxide memristive architecture coupled with a UV-sensitive hybrid top electrode obtained through direct surface treatment with PEDOT:PSS of an established resistive random access memory platform. UV-illumination ultimately results to resistive switching, without involving any additional stimulation, and a relation between the switching magnitude and the applied wavelength is depicted. Overall, the system and method presented showcase a promising proof-of-concept for granting an exclusively light-triggered resistive switching to memristive devices irrespectively of the structure and materials comprising their main core, and, in perspective can be considered for functional integrations optical-induced sensing.

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

Experimental and Theoretical Studies of Resistive Switching in Grain Boundaries of Polycrystalline Transition Metal Oxide Film

MRS Advances ◽  
2017 ◽  
Vol 2 (4) ◽  
pp. 229-234
Author(s):  
Takumi Moriyama ◽  
Sohta Hida ◽  
Takahiro Yamasaki ◽  
Takahisa Ohno ◽  
Satoru Kishida ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Grain Boundaries ◽  
Resistive Switching ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
First Principles Calculation ◽  
Operating Modes ◽  
Calculation Results ◽  
Grain Surface ◽  
Experimental And Theoretical Studies

ABSTRACTPractical use of Resistive Random Access Memory (ReRAM) depends on thorough understanding of the resistive switching (RS) mechanism in polycrystalline metal oxide films. Based on experimental and theoretical results of NiO based ReRAM, we have proposed a grain surface tiling model, in which grain surfaces (i.e. grain boundaries) are composed by insulating and conductive micro surface structures. This paper reports the adequacy of our model to the NiO based ReRAM and universality of surface electronic properties in metal oxides of NiO, CoO and MgO. Experimental results of RS operating modes suggest that the resistance changes in the grain boundaries, supporting our model. First-principles calculation results suggest that our model can be adopted to other metal oxide materials and the RS from a low resistance to a high resistance can be caused at 1000 K, which agrees with previous experimental reports.

scholarly journals Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept

RSC Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 4327-4338
Author(s):  
Naila Arshad ◽  
Muhammad Sultan Irshad ◽  
Misbah Sehar Abbasi ◽  
Saif Ur Rehman ◽  
Iftikhar Ahmed ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Low Cost ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Proof Of Concept ◽  
Access Memory ◽  
Electrical Switching

Low-cost and washable resistive switching (RS) memory devices with stable retention and low operational voltage are important for resistive random-access memory (RRAM).

scholarly journals Solution-Processable ZnO Thin Film Memristive Device for Resistive Random Access Memory Application

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 445 ◽  
Author(s):  
Swapnil Patil ◽  
Mahesh Chougale ◽  
Tushar Rane ◽  
Sagar Khot ◽  
Akshay Patil ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Random Access ◽  
Cost Effective ◽  
Resistive Random Access Memory ◽  
Zno Thin Film ◽  
Memristive Device ◽  
Circuit Element ◽  
Bipolar Resistive Switching ◽  
Lower Magnitude

The memristive device is a fourth fundamental circuit element with inherent memory, nonlinearity, and passivity properties. Herein, we report on a cost-effective and rapidly produced ZnO thin film memristive device using the doctor blade method. The active layer of the developed device (ZnO) was composed of compact microrods. Furthermore, ZnO microrods were well spread horizontally and covered the entire surface of the fluorine-doped tin oxide substrate. X-ray diffraction (XRD) results confirmed that the synthesized ZnO was oriented along the c-axis and possessed a hexagonal crystal structure. The device showed bipolar resistive switching characteristics and required a very low resistive switching voltage (±0.8 V) for its operation. Two distinct and well-resolved resistance states with a remarkable 103 memory window were achieved at 0.2-V read voltage. The developed device switched successfully in consecutive 102 switching cycles and was stable over 102 seconds without any observable degradation in the resistive switching states. In addition to this, the charge–magnetic flux curve was observed to be a single-valued function at a higher magnitude of the flux and became double valued at a lower magnitude of the flux. The conduction mechanism of the ZnO thin film memristive device followed the space charge limited current, and resistive switching was due to the filamentary resistive switching effect.

scholarly journals Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

Metals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 772
Author(s):  
Seunghyun Kim ◽  
Osung Kwon ◽  
Hojeong Ryu ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Silicon Substrate ◽  
Photoelectron Spectroscopy ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Alloy Type ◽  
Switching Type ◽  
Neuromorphic System ◽  
Device Properties ◽  
Partial Reset

This work demonstrates the synaptic properties of the alloy-type resistive random-access memory (RRAM). We fabricated the HfAlOx-based RRAM for a synaptic device in a neuromorphic system. The deposition of the HfAlOx film on the silicon substrate was verified by X-ray photoelectron spectroscopy (XPS) analysis. It was found that both abrupt and gradual resistive switching could be implemented, depending on the reset stop voltage. In the reset process, the current gradually decreased at weak voltage, and at strong voltage, it tended to decrease rapidly by Joule heating. The type of switching determined by the first reset process was subsequently demonstrated to be stable switching by successive set and reset processes. A gradual switching type has a much smaller on/off window than abrupt switching. In addition, retention maintained stability up to 2000 s in both switching cases. Next, the multiple current states were tested in the gradual switching case by identical pulses. Finally, we demonstrated the potentiation and depression of the Cu/HfAlOx/Si device as a synapse in an artificial neural network and confirmed that gradual resistive switching was suitable for artificial synapses, using neuromorphic system simulation.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Resistive Switching Characteristics in TiO2 ReRAM with Top Electrode of Co Selectively Formed on SAMs Printed Patterns

2007 ◽  
Vol 124-126 ◽  
pp. 603-606
Author(s):  
Sang Hee Won ◽  
Seung Hee Go ◽  
Jae Gab Lee
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Atomic Layer ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Tio2 Thin Films ◽  
Selective Deposition ◽  
Precise Control ◽  
Resistance State ◽  
Switching Characteristics

Simple process for the fabrication of Co/TiO2/Pt resistive random access memory, called ReRAM, has been developed by selective deposition of Co on micro-contact printed (μ-CP) self assembled monolayers (SAMs) patterns. Atomic Layer Deposition (ALD) was used to deposit TiO2 thin films, showing its ability of precise control over the thickness of TiO2, which is crucial to obtain proper resistive switching properties of TiO2 ReRAM. The fabrication process for Co/TiO2/Pt ReRAM involves the ALD of TiO2 on sputter-deposited Pt bottom electrode, followed by μ-CP with SAMs and then selective deposition of Co. This results in the Co/TiO2/Pt structure ReRAM. For comparison, Pt/TiO2/Pt ReRAM was produced and revealing the similar switching characteristics as that of Co/TiO2/Pt, thus indicating the feasibility of Co replacement with Pt top electrode. The ratios between the high-resistance state (Off state) and the low-resistance state (On state) were larger than 102. Consequently, the selective deposition of Co with μ-CP, newly developed in this study, can simplify the process and thus implemented into the fabrication of ReRAM.

Reliable analog resistive switching behaviors achieved using memristive devices in AlOx/HfOx bilayer structure for neuromorphic systems

2021 ◽  
Author(s):  
Meng Qi ◽  
Tianquan Fu ◽  
Huadong Yang ◽  
ye tao ◽  
Chunran Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Learning Experience ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Spike Timing ◽  
Information Storage ◽  
Bilayer Structure ◽  
Neuromorphic Computing ◽  
Von Neumann ◽  
Simulation Based

Abstract Human brain synaptic memory simulation based on resistive random access memory (RRAM) has an enormous potential to replace traditional Von Neumann digital computer thanks to several advantages, including its simple structure, high-density integration, and the capability to information storage and neuromorphic computing. Herein, the reliable resistive switching (RS) behaviors of RRAM are demonstrated by engineering AlOx/HfOx bilayer structure. This allows for uniform multibit information storage. Further, the analog switching behaviors are capable of imitate several synaptic learning functions, including learning experience behaviors, short-term plasticity-long-term plasticity transition, and spike-timing-dependent-plasticity (STDP). In addition, the memristor based on STDP learning rules are implemented in image pattern recognition. These results may offer a promising potential of HfOx-based memristors for future information storage and neuromorphic computing applications.

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