scholarly journals Consequences of quantum noise control for the relaxation resonance frequency and phase noise in heterogeneous Silicon/III–V lasers

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Dongwan Kim ◽  
Mark Harfouche ◽  
Huolei Wang ◽  
Christos T. Santis ◽  
Yaakov Vilenchik ◽  
...  
Keyword(s):  
Spectral Density ◽  
Resonance Frequency ◽  
Quantum Noise ◽  
Frequency Noise ◽  
Laser Mode ◽  
Noise Spectral Density ◽  
High Frequencies ◽  
Order Of Magnitude ◽  
Laser Design ◽  
Relaxation Resonance

AbstractWe have recently introduced a new semiconductor laser design which is based on an extreme, 99%, reduction of the laser mode absorption losses. In previous reports, we showed that this was achieved by a laser mode design which confines the great majority of the modal energy (> 99%) in a low-loss Silicon guiding layer rather than in highly-doped, thus lossy, III–V p$${}^+$$ + and n$${}^+$$ + layers, which is the case with traditional III–V lasers. The resulting reduced electron-field interaction was shown to lead to a commensurate reduction of the spontaneous emission rate by the excited conduction band electrons into the laser mode and thus to a reduction of the frequency noise spectral density of the laser field often characterized by the Schawlow–Townes linewidth. In this paper, we demonstrate theoretically and present experimental evidence of yet another major beneficial consequence of the new laser design: a near total elimination of the contribution of amplitude-phase coupling (the Henry $$\alpha $$ α parameter) to the frequency noise at “high” frequencies. This is due to an order of magnitude lowering of the relaxation resonance frequency of the laser. Here, we show that the practical elimination of this coupling enables yet another order of magnitude reduction of the frequency noise at high frequencies, resulting in a quantum-limited frequency noise spectral density of 130 Hz$$^2$$ 2 /Hz (linewidth of 0.4 kHz) for frequencies beyond the relaxation resonance frequency 680 MHz. This development is of key importance in the development of semiconductor lasers with higher coherence, particularly in the context of integrated photonics with a small laser footprint without requiring any sort of external cavity.

scholarly journals Consequences of Quantum Noise Control for the Relaxation Resonance Frequency and Phase Noise in Heterogeneous Silicon/III-V Lasers

2021 ◽  
Author(s):  
Dongwan Kim ◽  
Mark Harfouche ◽  
Huolei Wang ◽  
Christos T. Santis ◽  
Yaakov Vilenchik ◽  
...  
Keyword(s):  
Spectral Density ◽  
Resonance Frequency ◽  
Quantum Noise ◽  
Frequency Noise ◽  
Laser Mode ◽  
Noise Spectral Density ◽  
High Frequencies ◽  
Order Of Magnitude ◽  
Laser Design ◽  
Relaxation Resonance

Abstract We have recently introduced a new semiconductor laser design which is based on an extreme, 99%, reduction of the laser mode absorption losses. This was achieved by a laser mode design which confines the great majority of the modal energy (> 99%) in a low-loss Silicon guiding layer rather than in highly-doped, thus lossy, III-V p+ and n+ layers, which is the case with traditional III-V lasers. The resulting reduced electron-field interaction leads directly to a commensurate reduction of the spontaneous emission rate by the excited conduction band electrons into the laser mode and thus to a reduction of the frequency noise spectral density of the laser field often characterized by the Schawlow-Townes linewidth. In this paper, we demonstrate theoretically and present experimental evidence of yet another major beneficial consequence of the new laser design: a near total elimination of the contribution of amplitude-phase coupling (the Henry α parameter) to the frequency noise at “high” frequencies. This is due to an order of magnitude lowering of the relaxation resonance frequency of the laser. The practical elimination of this coupling enables yet another order of magnitude reduction of the frequency noise at high frequencies, resulting in a quantum-limited frequency noise spectral density of 130 Hz2/Hz (linewidth of 0.4 kHz) for frequencies beyond 680 MHz. This development is of key importance in the drive to semiconductor lasers with higher coherence, particularly in the context of integrated photonics with a small laser footprint.

scholarly journals Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs

2017 ◽  
Vol 12 (2) ◽  
pp. 62-70
Author(s):  
Rafael Assalti ◽  
Rodrigo T. Doria ◽  
Denis Flandre ◽  
Michelly De Souza
Keyword(s):  
Spectral Density ◽  
Gate Voltage ◽  
Low Frequency ◽  
Drain Current ◽  
Current Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Fully Depleted ◽  
Self Cascode

In this paper the origin of low-frequency noise in the Asymmetric Self-Cascode (A-SC) structure composed by Fully Depleted SOI nMOSFETs is investigated through experimental results. It is shown that the predominant noise source of the A-SC structure is linked to carrier number fluctuations, being governed by the noise generated in the transistor near the source. Larger channel doping concentrations degrade the quality of the Si-SiO2 interface and the gate oxide, which causes an increase of the normalized drain current noise spectral density, just as the reduction of the gate voltage overdrive, since there are few carriers in the channel. The A-SC structures have showed higher noise compared with single transistors. In saturation regime, the increase of the gate voltage overdrive has incremented the corner frequency, shifting the g-r noise to higher frequencies. Besides that, the normalized noise has been significantly increased when compared with the linear regime due to the rise of the drain current noise spectral density.

1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

2000 ◽  
Vol 14 (07) ◽  
pp. 751-760 ◽  
Author(s):  
F. V. GASPARYAN ◽  
S. V. MELKONYAN ◽  
V. M. AROUTIOUNYAN ◽  
H. V. ASRIYAN
Keyword(s):  
Experimental Data ◽  
Spectral Density ◽  
Temperature Dependence ◽  
Conduction Electron ◽  
Optical Phonon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Analytical Expressions

The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron–optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.

LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES

2011 ◽  
Vol 20 (01) ◽  
pp. 161-170 ◽  
Author(s):  
GUANXIONG LIU ◽  
WILLIAM STILLMAN ◽  
SERGEY RUMYANTSEV ◽  
MICHAEL SHUR ◽  
ALEXANDER A. BALANDIN
Keyword(s):  
Carbon Nanotube ◽  
Spectral Density ◽  
Flicker Noise ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Back Gate ◽  
Noise Spectral Density ◽  
Carbon Nanotube Devices ◽  
Graphene Devices

We report results of the experimental investigation of the low-frequency noise in graphene transistors. The graphene devices were measured in three-terminal configuration. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and the Hooge parameter αH ~10-3. Both top-gate and back-gate devices were studied. The analysis of the noise spectral-density dependence on the gate biases helped us to elucidate the noise sources in these devices. We compared the noise performance of graphene devices with that of carbon nanotube devices. It was determined that graphene devices works better than carbon nanotube devices in terms of the low-frequency noise. The obtained results are important for graphene electronic, communication and sensor applications.

scholarly journals Low Frequency Noise of Tantalum Capacitors

2002 ◽  
Vol 25 (2) ◽  
pp. 161-167 ◽  
Author(s):  
J. Sikula ◽  
J. Hlavka ◽  
J. Pavelka ◽  
V. Sedlakova ◽  
L. Grmela ◽  
...  
Keyword(s):  
Spectral Density ◽  
Leakage Current ◽  
Healing Process ◽  
Low Frequency ◽  
Mis Structure ◽  
Frequency Noise ◽  
Self Healing ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Reliability Indicator

A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model ofTa−Ta2O5−MnO2MIS structure was used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temperatureMnO2−Mn2O3transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated and noise reliability indicator was suggested. In normal mode the noise spectral density at rated voltage increases with second power of current and it varies within two decades for given leakage current value. In reverse mode there is only weak correlation and for given applied voltage, the leakage current for all ensemble varies only by one order, whereas the noise spectral density of the same samples spread in five orders.

1/f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area

2011 ◽  
Vol 1344 ◽  
Author(s):  
Guanxiong Liu ◽  
Sergey Rumyantsev ◽  
William Stillman ◽  
Michael Shur ◽  
Alexander A. Balandin
Keyword(s):  
Spectral Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Bilayer Graphene ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Noise Sources ◽  
Noise Spectral Density ◽  
Noise Characteristics

ABSTRACTWe carried out a systematic experimental study of the low-frequency noise characteristics in a large number of single and bilayer graphene transistors. The prime purpose was to determine the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the surface area of the graphene channel indicates that the dominant contributions to the 1/f electronic noise come from the graphene channel region itself. Aging of graphene transistors due to exposure to ambient for over a month resulted in substantially increased noise, which was attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors shows a non-monotonic dependence on the gate bias. This observation confirms that the 1/f noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors.

scholarly journals Quantum noise and vacuum fluctuations in balanced homodyne detections through ideal multi-mode detectors

2021 ◽  
Author(s):  
Kouji Nakamura
Keyword(s):  
Spectral Density ◽  
Gravitational Wave ◽  
Quantum Noise ◽  
Local Oscillator ◽  
Vacuum Fluctuations ◽  
Noise Spectral Density ◽  
Quantum Operator ◽  
Two Photon ◽  
Gravitational Wave Detectors ◽  
Readout Scheme

Abstract The balanced homodyne detection as a readout scheme of gravitational-wave detectors is carefully examined from the quantum field theoretical point of view. The readout scheme in gravitational-wave detectors specifies the directly measured quantum operator in the detection. This specification is necessary when we apply the recently developed quantum measurement theory to gravitational-wave detections. We examine the two models of measurement. One is the model in which the directly measured quantum operator at the photodetector is Glauber’s photon number operator, and the other is the model in which the power operator of the optical field is directly measured. These two are regarded as ideal models of photodetectors. We first show these two models yield the same expectation value of the measurement. Since it is consensus in the gravitational-wave community that vacuum fluctuations contribute to the noises in the detectors, we also clarify the contributions of vacuum fluctuations to the quantum noise spectral density without using the two-photon formulation which is used in the gravitational-wave community. We found that the conventional noise spectral density in the two-photon formulation includes vacuum fluctuations from the main interferometer but does not include those from the local oscillator. Although the contribution of vacuum fluctuations from the local oscillator theoretically yields the difference between the above two models in the noise spectral densities, this difference is negligible in realistic situations.

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