LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES

2011 ◽  
Vol 20 (01) ◽  
pp. 161-170 ◽  
Author(s):  
GUANXIONG LIU ◽  
WILLIAM STILLMAN ◽  
SERGEY RUMYANTSEV ◽  
MICHAEL SHUR ◽  
ALEXANDER A. BALANDIN
Keyword(s):  
Carbon Nanotube ◽  
Spectral Density ◽  
Flicker Noise ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Back Gate ◽  
Noise Spectral Density ◽  
Carbon Nanotube Devices ◽  
Graphene Devices

We report results of the experimental investigation of the low-frequency noise in graphene transistors. The graphene devices were measured in three-terminal configuration. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and the Hooge parameter αH ~10-3. Both top-gate and back-gate devices were studied. The analysis of the noise spectral-density dependence on the gate biases helped us to elucidate the noise sources in these devices. We compared the noise performance of graphene devices with that of carbon nanotube devices. It was determined that graphene devices works better than carbon nanotube devices in terms of the low-frequency noise. The obtained results are important for graphene electronic, communication and sensor applications.

scholarly journals Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs

2017 ◽  
Vol 12 (2) ◽  
pp. 62-70
Author(s):  
Rafael Assalti ◽  
Rodrigo T. Doria ◽  
Denis Flandre ◽  
Michelly De Souza
Keyword(s):  
Spectral Density ◽  
Gate Voltage ◽  
Low Frequency ◽  
Drain Current ◽  
Current Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Fully Depleted ◽  
Self Cascode

In this paper the origin of low-frequency noise in the Asymmetric Self-Cascode (A-SC) structure composed by Fully Depleted SOI nMOSFETs is investigated through experimental results. It is shown that the predominant noise source of the A-SC structure is linked to carrier number fluctuations, being governed by the noise generated in the transistor near the source. Larger channel doping concentrations degrade the quality of the Si-SiO2 interface and the gate oxide, which causes an increase of the normalized drain current noise spectral density, just as the reduction of the gate voltage overdrive, since there are few carriers in the channel. The A-SC structures have showed higher noise compared with single transistors. In saturation regime, the increase of the gate voltage overdrive has incremented the corner frequency, shifting the g-r noise to higher frequencies. Besides that, the normalized noise has been significantly increased when compared with the linear regime due to the rise of the drain current noise spectral density.

1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

2000 ◽  
Vol 14 (07) ◽  
pp. 751-760 ◽  
Author(s):  
F. V. GASPARYAN ◽  
S. V. MELKONYAN ◽  
V. M. AROUTIOUNYAN ◽  
H. V. ASRIYAN
Keyword(s):  
Experimental Data ◽  
Spectral Density ◽  
Temperature Dependence ◽  
Conduction Electron ◽  
Optical Phonon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Analytical Expressions

The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron–optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.

scholarly journals Low Frequency Noise of Tantalum Capacitors

2002 ◽  
Vol 25 (2) ◽  
pp. 161-167 ◽  
Author(s):  
J. Sikula ◽  
J. Hlavka ◽  
J. Pavelka ◽  
V. Sedlakova ◽  
L. Grmela ◽  
...  
Keyword(s):  
Spectral Density ◽  
Leakage Current ◽  
Healing Process ◽  
Low Frequency ◽  
Mis Structure ◽  
Frequency Noise ◽  
Self Healing ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Reliability Indicator

A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model ofTa−Ta2O5−MnO2MIS structure was used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temperatureMnO2−Mn2O3transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated and noise reliability indicator was suggested. In normal mode the noise spectral density at rated voltage increases with second power of current and it varies within two decades for given leakage current value. In reverse mode there is only weak correlation and for given applied voltage, the leakage current for all ensemble varies only by one order, whereas the noise spectral density of the same samples spread in five orders.

Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors

2008 ◽  
Vol 92 (22) ◽  
pp. 223114 ◽  
Author(s):  
Guangyu Xu ◽  
Fei Liu ◽  
Song Han ◽  
Koungmin Ryu ◽  
Alexander Badmaev ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Low-Frequency Noise in “Graphene-Like” Exfoliated Thin Films of Topological Insulators

2011 ◽  
Vol 1344 ◽  
Author(s):  
M. Z. Hossain ◽  
S. L. Rumyantsev ◽  
K. M. F. Shahil ◽  
D. Teweldebrhan ◽  
M. Shur ◽  
...  
Keyword(s):  
Thin Films ◽  
Topological Insulators ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Bulk Crystals ◽  
Noise Spectral Density ◽  
Noise Data ◽  
Device Applications ◽  
Surface Conduction

ABSTRACTWe report results of the study of the low-frequency noise in thin films of bismuth selenide topological insulators, which were mechanically exfoliated from bulk crystals via “graphene-like” procedures. From the resistance dependence on the film thickness, it was established that the surface conduction contributions to electron transport were dominant. It was found that the current fluctuations have the noise spectral density SI ∞ 1/f (where f is the frequency) for the frequency range up to 10 kHz. The obtained noise data are important for transport experiments with topological insulators and for any proposed device applications of these materials.

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