scholarly journals Spherulitic and rotational crystal growth of Quartz thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Nick R. Lutjes ◽  
Silang Zhou ◽  
Jordi Antoja-Lleonart ◽  
Beatriz Noheda ◽  
Václav Ocelík
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Electron Back Scatter Diffraction ◽  
Lattice Rotation ◽  
Spherulitic Growth ◽  
Rotation Axes ◽  
Ebsd Data ◽  
Lattice Planes ◽  
Crystal Fibers ◽  
Amorphous Quartz

AbstractTo obtain crystalline thin films of alpha-Quartz represents a challenge due to the tendency for the material towards spherulitic growth. Thus, understanding the mechanisms that give rise to spherulitic growth can help regulate the growth process. Here the spherulitic type of 2D crystal growth in thin amorphous Quartz films was analyzed by electron back-scatter diffraction (EBSD). EBSD was used to measure the size, orientation, and rotation of crystallographic grains in polycrystalline SiO2 and GeO2 thin films with high spatial resolution. Individual spherulitic Quartz crystal colonies contain primary and secondary single crystal fibers, which grow radially from the colony center towards its edge, and fill a near circular crystalline area completely. During their growth, individual fibers form so-called rotational crystals, when some lattice planes are continuously bent. The directions of the lattice rotation axes in the fibers were determined by an enhanced analysis of EBSD data. A possible mechanism, including the generation of the particular type of dislocation(s), is suggested.

Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  
Keyword(s):  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Solid Phase ◽  
Quartz Glass Substrate ◽  
Heteroepitaxial Growth ◽  
Phase Growth ◽  
Single Crystalline ◽  
Glass Substrates ◽  
Amorphous Quartz

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

2014 ◽  
Author(s):  
Pornvitoo Rittinon ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Diffraction Method ◽  
Electron Back Scatter Diffraction ◽  
High Resistivity ◽  
Copper Thin Film ◽  
Electroplated Copper ◽  
The Relationship

Copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (Trough Silicon Via), fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grain boundaries in the films. Porous or sparse grain boundaries show very high resistivity and brittle fracture characteristic in the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on the Wiedemann-Franz’s law. Since the copper interconnections are used not only for the electrical conduction but also for the thermal conduction, it is very important to quantitatively evaluate the crystallinity of the polycrystalline thin-film materials and clarify the relationship between the crystallinity and thermal properties of the films. The crystallinity of the interconnections were quantitatively evaluated using an electron back-scatter diffraction method. It was found that the porous grain boundaries which contain a significant amount of vacancies increase the local electrical resistance in the interconnections, and thus, cause the local high Joule heating. Such porous grain boundaries can be eliminated by control the crystallinity of the seed layer material on which the electroplated copper thin film is electroplated.

Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study

2006 ◽  
Vol 45 (5B) ◽  
pp. 4344-4346 ◽  
Author(s):  
Shinji Munetoh ◽  
Takahide Kuranaga ◽  
Byoung Min Lee ◽  
Teruaki Motooka ◽  
Takahiko Endo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

scholarly journals Crystal Growth Mode Changes during Pulsed Laser Induced Rapid Solidification in Nanoscale Thin Films of Al-Cu Eutectic

2014 ◽  
Vol 20 (S3) ◽  
pp. 1662-1663 ◽  
Author(s):  
Kai Zweiacker ◽  
Can Liu ◽  
Joseph T. McKeown ◽  
Thomas LaGrange ◽  
Bryan W. Reed ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Rapid Solidification ◽  
Pulsed Laser ◽  
Growth Mode

Crystal growth of YBa/sub 2/Cu/sub 3/O/7-X/ thin films prepared by TFA-MOD method

2003 ◽  
Vol 13 (2) ◽  
pp. 2512-2515 ◽  
Author(s):  
T. Ono ◽  
K. Matsumoto ◽  
K. Osamura ◽  
I. Hirabayashi
Keyword(s):  
Thin Films ◽  
Crystal Growth

Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates

2006 ◽  
Vol 980 ◽  
Author(s):  
Kensuke Akiyama ◽  
Satoru Kaneko ◽  
Takanori Kiguchi ◽  
Takashi Suemasu ◽  
Takeshi Kimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystal Growth ◽  
Magnetron Sputtering ◽  
Iron Silicide ◽  
Rf Magnetron Sputtering ◽  
Single Element ◽  
Stabilized Zirconia ◽  
Crystalline Film ◽  
Anions And Cations

AbstractIron silicide thin films were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using RF magnetron sputtering and evaporation methods. Epitaxial b-FeSi2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the b-FeSi2 and YSZ were the same as those between b-FeSi2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial b-FeSi2 film can be grown when substrates and b-FeSi2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or b-FeSi2 surface consists of a mixture of anions and cations or iron and silicon.

Microtexture Dependence of Mechanical and Electrical Properties of Gold Thin Films Used for Micro Bumps of 3D Stacking Structures

2020 ◽  
Author(s):  
Genta Nakauchi ◽  
Shota Akasaki ◽  
Hideo Miura
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Indentation Test ◽  
Electron Back Scatter Diffraction ◽  
Effective Lifetime ◽  
Mechanical And Electrical Properties ◽  
Gold Thin Films ◽  
3D Stacking

Abstract The variation of their crystallinity, in other words, the order of atom arrangement of grain boundaries in electroplated gold thin films was investigated by changing their manufacturing conditions. Then, the effect of the crystallinity on both their mechanical and electrical properties was measured by using nano-indentation test and electromigration test. The crystallinity of the gold thin films was varied by changing the under-layer material used for electroplating. Also, the micro texture of gold thin films was evaluated by EBSD (Electron Back-Scatter Diffraction) and XRD (X-Ray Diffraction). It was clarified that the crystallinity of the electroplated gold thin films changed drastically depending on the crystallinity of the under-layer materials and electroplating conditions such as current density and temperature. This variation of the crystallinity should have caused wide variation of mechanical properties of the films. In addition, their mechanical properties such as Young’s modulus and hardness showed wide variation by about 3 times comparing with those of bulk gold. Similarly, the EM resistance of the electroplated gold bumps varied drastically depending on the ratio of porous grain boundaries and their crystallinity. Both the ratio and crystallinity also varied depending on the crystallinity of the under layer and electroplating conditions. The effective lifetime of the gold bumps was successfully predicted by considering both the crystallinity and residual stress of fine gold bumps. The lifetime varied more than 10 times as a strong function of the crystallinity of grain boundaries in the fine bumps. Therefore, it is very important to control the crystallinity of the under-layer for electroplating in order to control the distribution of the mechanical properties and reliability of the electroplated gold thin films.

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