Self-catalytic growth of single-phase AlGaN alloy nanowires by chemical vapor deposition

2006 ◽  
Vol 89 (19) ◽  
pp. 193105 ◽  
Author(s):  
L. Hong ◽  
Z. Liu ◽  
X. T. Zhang ◽  
S. K. Hark
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Catalytic Growth ◽  
Alloy Nanowires

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

scholarly journals Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

ACS Omega ◽  
2019 ◽  
Vol 4 (12) ◽  
pp. 14772-14779 ◽  
Author(s):  
Sanjay Sankaranarayanan ◽  
Prabakaran Kandasamy ◽  
Baskar Krishnan
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Catalytic Growth

Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6236-6242 ◽  
Author(s):  
Y. Arata ◽  
H. Nishinaka ◽  
D. Tahara ◽  
M. Yoshimoto
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Single Phase ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Sapphire Substrates

In this study, single-phase ε-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates.

scholarly journals High-yield single-step catalytic growth of graphene nanostripes by plasma enhanced chemical vapor deposition

Carbon ◽  
2018 ◽  
Vol 129 ◽  
pp. 527-536 ◽  
Author(s):  
Chen-Chih Hsu ◽  
Jacob D. Bagley ◽  
Marcus L. Teague ◽  
Wei-Shiuan Tseng ◽  
Kathleen L. Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Step ◽  
High Yield ◽  
Catalytic Growth

Single-phase tungsten carbide nanopillar arrays prepared by chemical vapor deposition

RSC Advances ◽  
2012 ◽  
Vol 2 (19) ◽  
pp. 7403 ◽  
Author(s):  
Feng Teng ◽  
Jiangtao Wang ◽  
Xiuyun An ◽  
Bingan Lu ◽  
Yurong Su ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Nanopillar Arrays

Ba2TiO4 and Ba4Ti13O30 Thick Films Prepared by Laser Chemical Vapor Deposition and their Microstructure

2012 ◽  
Vol 508 ◽  
pp. 199-202
Author(s):  
Dong Yun Guo ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Thick Films ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Columnar Growth ◽  
Deposition Rates

Ba2TiO4 and Ba4Ti13O30 Thick Films Were Prepared by Laser Chemical Vapor Deposition Using Ba- and Ti-Dipivaloylmethanate Precursors. Single-Phase Ba2TiO4 Thick Films Were Obtained at 845–946 K and Ba/Ti Source Molar Ratio 2.4. Single-Phase Ba4Ti13O30 Films Were Obtained at 944–1011 K and Ba/Ti Source Molar Ratio 0.38. Ba2TiO4 Thick Films Consisted of Truncated Grains, while Ba4ti13o30 Thick Films Had Shellfish-Like Grains. Ba2TiO4 and Ba4Ti13O30 Thick Films Showed a Columnar Growth and their Deposition Rates Were 72 and 132 μm h−1, Respectively.

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